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VN1206L-G-P002

VN1206L-G-P002
Mfr. #:
VN1206L-G-P002
Manufacturer:
Microchip Technology
Description:
MOSFET N-CH Enhancmnt Mode MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
VN1206L-G-P002 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
VN1206L-G-P002 more Information VN1206L-G-P002 Product Details
Product Attribute
Attribute Value
Manufacturer:
Microchip
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-92-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
120 V
Id - Continuous Drain Current:
230 mA
Rds On - Drain-Source Resistance:
10 Ohms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Product:
MOSFET Small Signal
Transistor Type:
1 N-Channel
Brand:
Microchip Technology
Fall Time:
12 ns
Product Type:
MOSFET
Rise Time:
8 ns
Factory Pack Quantity:
2000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
18 ns
Typical Turn-On Delay Time:
8 ns
Unit Weight:
0.016000 oz
Tags
VN1206L-G, VN1206L, VN1206, VN120, VN12, VN1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 120V, 6.0 OHM 3 TO-92 RVT/R ROHS COMPLIANT: YES
***et
Trans MOSFET N-CH 120V 0.23A 3-Pin TO-92 Bag
***rochip SCT
Enhancement-Mode N-Channel, 6Ω, 2V, TO-92-3, RoHS
*** Electronic Components
MOSFET N-CH Enhancmnt Mode MOSFET
***hard Electronics
Transistor: P-MOSFET; unipolar; -100V; -0.23A; 0.7W; TO92
***ure Electronics
P-Channel 100 V 8 Ohm Enhancement Mode Vertical DMOS FET - TO-92
***ark
P CH DMOS FET, -100V, 230mA, TO-92; Transistor Polarity:P Channel; Continuous Drain Current, Id:230mA; Drain Source Voltage, Vds:-100V; On Resistance, Rds(on):8ohm; Rds(on) Test Voltage, Vgs:-10V; Threshold Voltage, Vgs Typ:-3.5V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, P, E-LINE; Transistor Polarity:P Channel; Continuous Drain Current Id:230mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3.5V; Power Dissipation Pd:700mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:230mA; Current Temperature:25°C; Device Marking:ZVP2110A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:700mW; Power Dissipation Pd:700mW; Power Dissipation Ptot Max:700mW; Pulse Current Idm:3A; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-3.5V; Voltage Vgs Rds on Measurement:-10V
***et Europe
Trans MOSFET P-CH 100V 0.23A 3-Pin E-Line Box
***ure Electronics
P-Channel 100 V 8 Ohm Enhancement Mode Vertical DMOS FET
***roFlash
Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
*** Source Electronics
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | MOSFET N-CH 100V 200MA TO92-3
***ical
Trans MOSFET N-CH 100V 0.2A Automotive 3-Pin E-Line
***S
French Electronic Distributor since 1988
***ment14 APAC
MOSFET, N E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):10ohm; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:625mW; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Pulse Current Idm:2A
Part # Mfg. Description Stock Price
VN1206L-G-P002
DISTI # VN1206L-G-P002-ND		Microchip Technology IncMOSFET N-CH 120V 0.23A TO92-3
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$1.2360
VN1206L-G-P002
DISTI # VN1206L-G-P002		Microchip Technology IncTrans MOSFET N-CH 120V 0.23A 3-Pin TO-92 Bag - Tape and Reel (Alt: VN1206L-G-P002)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 20000:$0.7609
  • 12000:$0.7729
  • 8000:$0.7969
  • 4000:$0.8239
  • 2000:$0.8519
VN1206L-G-P002
DISTI # 53Y4319		Microchip Technology IncMOSFET, N-CHANNEL ENHANCEMENT-MODE, 120V, 6.0 OHM 3 TO-92 RVT/R0
  • 100:$1.2400
  • 25:$1.3600
  • 1:$1.6400
VN1206L-G-P002
DISTI # 70483882		Microchip Technology IncMOSFET,N-CHANNEL ENHANCEMENT-MODE,120V,6.0 Ohm3 TO-92RVT/R
RoHS: Compliant		0
  • 2000:$1.1840
VN1206L-G-P002
DISTI # 689-VN1206L-G-P002		Microchip Technology IncMOSFET N-CH Enhancmnt Mode MOSFET
RoHS: Compliant		1885
  • 1:$1.6200
  • 10:$1.6000
  • 25:$1.3500
  • 100:$1.2300
  • 250:$1.0800
  • 500:$0.9270
  • 1000:$0.8440
  • 2000:$0.8440
  • 4000:$0.7710
  • 10000:$0.7500
VN1206L-G-P002
DISTI # VN1206L-G-P002		Microchip Technology IncMOSFETN-CHANNEL ENHANCEMENT-MODE120V6.0 Ohm
RoHS: Compliant
Min Qty: 1
Package Multiple: 1
Container: Reel		16000
  • 1000:$1.0000
  • 100:$1.2000
  • 26:$1.3200
  • 1:$1.5800
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Availability
Stock:
Available
On Order:
1984
Enter Quantity:
Current price of VN1206L-G-P002 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.62
$1.62
10
$1.60
$16.00
25
$1.35
$33.75
100
$1.23
$123.00
250
$1.08
$270.00
500
$0.93
$463.50
1000
$0.84
$844.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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