SI8806DB-T2-E1

SI8806DB-T2-E1
Mfr. #:
SI8806DB-T2-E1
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 12V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
Lifecycle:
New from this manufacturer.
Datasheet:
SI8806DB-T2-E1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI8806DB-T2-E1 DatasheetSI8806DB-T2-E1 Datasheet (P4-P6)SI8806DB-T2-E1 Datasheet (P7-P8)
ECAD Model:
More Information:
SI8806DB-T2-E1 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Tradename:
TrenchFET
Packaging:
Reel
Series:
SI8
Brand:
Vishay / Siliconix
Product Type:
MOSFET
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Unit Weight:
0.004233 oz
Tags
SI880, Si88, SI8
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 12 V 0.9 W 17 nC Silicon Surface Mount Mosfet - MICRO-FOOT
***et Europe
Trans MOSFET N-CH 12V 3.9A 4-Pin Micro Foot T/R
***o-Tech
MOSFET Nch 12V 3.9A TrenchFET MICRO FOOT
***ark
MOSFET, N-CH, 12V, MICROFOOT
***i-Key
MOSFET N-CH 12V MICROFOOT
***ment14 APAC
MOSFET, N-CH, 12V, MICROFOOT; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.035ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:900mW; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:MICRO FOOT; No. of Pins:4; MSL:MSL 1 - Unlimited; Operating Temperature Range:-50°C to +150°C
MicroFoot® Power MOSFETs
Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More
Part # Mfg. Description Stock Price
SI8806DB-T2-E1
DISTI # V36:1790_09216585
Vishay IntertechnologiesTrans MOSFET N-CH 12V 3.9A 4-Pin Micro Foot T/R
RoHS: Compliant
0
    SI8806DB-T2-E1
    DISTI # V72:2272_09216585
    Vishay IntertechnologiesTrans MOSFET N-CH 12V 3.9A 4-Pin Micro Foot T/R
    RoHS: Compliant
    0
      SI8806DB-T2-E1
      DISTI # SI8806DB-T2-E1CT-ND
      Vishay SiliconixMOSFET N-CH 12V MICROFOOT
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)
      3604In Stock
      • 1000:$0.1839
      • 500:$0.2379
      • 100:$0.3028
      • 10:$0.4060
      • 1:$0.4700
      SI8806DB-T2-E1
      DISTI # SI8806DB-T2-E1DKR-ND
      Vishay SiliconixMOSFET N-CH 12V MICROFOOT
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      3604In Stock
      • 1000:$0.1839
      • 500:$0.2379
      • 100:$0.3028
      • 10:$0.4060
      • 1:$0.4700
      SI8806DB-T2-E1
      DISTI # SI8806DB-T2-E1TR-ND
      Vishay SiliconixMOSFET N-CH 12V MICROFOOT
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 30000:$0.1400
      • 15000:$0.1417
      • 6000:$0.1522
      • 3000:$0.1628
      SI8806DB-T2-E1
      DISTI # SI8806DB-T2-E1
      Vishay IntertechnologiesTrans MOSFET N-CH 12V 3.9A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8806DB-T2-E1)
      RoHS: Not Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
      • 30000:$0.1279
      • 18000:$0.1309
      • 12000:$0.1349
      • 6000:$0.1409
      • 3000:$0.1449
      SI8806DB-T2-E1
      DISTI # 78-SI8806DB-T2-E1
      Vishay IntertechnologiesMOSFET 12V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
      RoHS: Compliant
      670
      • 1:$0.4800
      • 10:$0.3620
      • 100:$0.2690
      • 500:$0.2210
      • 1000:$0.1710
      • 3000:$0.1550
      • 6000:$0.1450
      • 9000:$0.1360
      • 24000:$0.1300
      SI8806DBT2E1Vishay IntertechnologiesSmall Signal Field-Effect Transistor
      RoHS: Compliant
      3000
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        Availability
        Stock:
        Available
        On Order:
        1986
        Enter Quantity:
        Current price of SI8806DB-T2-E1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $0.48
        $0.48
        10
        $0.36
        $3.62
        100
        $0.27
        $26.90
        500
        $0.22
        $110.50
        1000
        $0.17
        $171.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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