IPA60R060C7XKSA1

Mfr. #:: IPA60R060C7XKSA1
Manufacturer:: Infineon Technologies
Description:: MOSFET HIGH POWER_NEW
Lifecycle:: New from this manufacturer.
Datasheet:: IPA60R060C7XKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220FP-3

Vds - Drain-Source Breakdown Voltage:: 600 V

Tradename:: CoolMOS

Packaging:: Tube

Height:: 16.15 mm

Length:: 10.65 mm

Series:: CoolMOS C7

Width:: 4.85 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Factory Pack Quantity:: 500

Subcategory:: MOSFETs

Part # Aliases:: IPA60R060C7 SP001385002

Unit Weight:: 0.068784 oz

Tags: IPA60R060C, IPA60R06, IPA60R0, IPA60R, IPA60, IPA6, IPA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

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IPA60R060C7XKSA1 Description

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.3pF 50volts C0G +/-0.05pF

*** Stop Electro: Power Field-Effect Transistor, 16A I(D), 600V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

***ure Electronics: Single N-Channel 650 V 0.19 Ohm 87 nC CoolMOS Power Mosfet - TO-220-3FP

***ical: Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220FP Tube

***ponent Stockers USA: 20.7 A 600 V 0.19 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***roFlash: Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 20.7 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) mOhm = 190 / Gate-Source Voltage V = 20 / Fall Time ns = 4.5 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 67 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-220FP / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 34.5

***ment14 APAC: MOSFET, N, COOLMOS, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:20.7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):190mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:34.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:690mJ; Current Iar:20A; Current Id Max:20.7A; Current Idss Max:1mA; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:190mohm; Package / Case:TO-220AB; Power Dissipation Pd:34.5W; Power Dissipation Pd:34.5W; Pulse Current Idm:62.1A; Rate of Voltage Change dv / dt:50V/µs; Repetitive Avalanche Energy Max:1mJ; Termination Type:Through Hole; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.9V; Voltage Vgs th Min:2.1V

***emi: N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220F

***Yang: Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube

*** Stop Electro: Power Field-Effect Transistor, 20.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, N-CH, 600V, 20.6A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***emi: N-Channel Power MOSFET, UniFETTM II, 600 V, 17 A, 340 mΩ, TO-220F

***Yang: Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET,N CH,600V,17A,TO220F; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.29ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:62.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)

***rchild Semiconductor: UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts..

***ical: Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220FP Tube

***ineon SCT: CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies, PG-TO220-3, RoHS

***ment14 APAC: MOSFET, N, 600V, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):220mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:20.7A; Package / Case:TO-220F; Power Dissipation Pd:35W; Power Dissipation Pd:35W; Pulse Current Idm:52A; Termination Type:Through Hole; Voltage Vds:600V; Voltage Vds Typ:600V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ineon: CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. | Summary of Features: Fourth series of CoolMOS market entry in 2004; Fast Body Diode, Q rr 1/10th of C3 series, V th 4 V, g fs high, R g low; Specific for phase-shift ZVS and DC-AC power applications | Benefits: Improved efficiency; More efficient, more compact, lighter and cooler; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness | Target Applications: Solar; Adapter; PC power; Consumer; Server; Telecom

***emi: Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, TO-220F

*** Source Electronics: Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 600V 20A TO220F

***ure Electronics: N-Channel 600 V 0.19 Ohm Flange Mount SuperFET Mosfet TO-220F

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:600V; Continuous Drain Current, Id:20A; On Resistance, Rds(on):0.15ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-TO-220 ;RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***el Electronic: Chip Resistor - Surface Mount 56kOhm 0201 (0603 Metric) ±1% ±200ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 56K OHM 1% 1/20W 0201

***nell: MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:20A; Resistance, Rds On:0.15ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:60A; Power, Pd:39W; Voltage, Vds Max:600V

***rchild Semiconductor: SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***icroelectronics: N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh(TM) II Power MOSFET (with fast diode) TO-220FP

*** Electronics: STMICROELECTRONICS STF23NM60ND Power MOSFET, N Channel, 19.5 A, 600 V, 0.15 ohm, 10 V, 4 V

***et: Trans MOSFET N-CH 600V 19.5A 3-Pin(3+Tab) TO-220FP Tube

***r Electronics: Power Field-Effect Transistor, 19.5A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N CH, 600V, 19.5A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 19.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;

Market price

Part #	Mfg.	Description	Stock	Price
IPA60R060C7XKSA1 DISTI # 30156531	Infineon Technologies AG	Trans MOSFET N-CH 600V 16A Tube RoHS: Compliant	500	500:$4.4544 250:$4.8864 100:$5.1072 50:$5.8848
IPA60R060C7XKSA1 DISTI # IPA60R060C7XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 600V 16A TO-220FP RoHS: Compliant Min Qty: 500 Container: Tube	Temporarily Out of Stock	500:$5.0952
IPA60R060C7XKSA1 DISTI # IPA60R060C7XKSA1	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPA60R060C7XKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	500:$4.2900 1000:$4.0900 2000:$3.9900 3000:$3.7900 5000:$3.6900
IPA60R060C7XKSA1 DISTI # 726-IPA60R060C7XKSA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	490	1:$7.1100 10:$6.4300 25:$6.1300 100:$5.3200 250:$5.0900 500:$4.6400

Image	Part #	Description
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	Mfr.#: TL431AIDBZR OMO.#: OMO-TL431AIDBZR	Voltage References Adjustable Precision Shunt Regulator
	Mfr.#: IPA60R180P7SXKSA1 OMO.#: OMO-IPA60R180P7SXKSA1	MOSFET CONSUMER
	Mfr.#: RT8522-6-10M0 OMO.#: OMO-RT8522-6-10M0	Common Mode Chokes / Filters 6A 10mH 2-Wire Vert PCB Mounting
	Mfr.#: RT8522-12-5M0 OMO.#: OMO-RT8522-12-5M0	Common Mode Chokes / Filters 12A 5mH 2-Wire Vert PCB Mounting
	Mfr.#: R71PR42204000K OMO.#: OMO-R71PR42204000K	Film Capacitors 2.2uF 630VDC10% 10% Rad
	Mfr.#: IPA60R180P7SXKSA1 OMO.#: OMO-IPA60R180P7SXKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CHANNEL 600V 18A TO220
	Mfr.#: TL431AIDBZR OMO.#: OMO-TL431AIDBZR-TEXAS-INSTRUMENTS	Voltage References Adjustable Precision Shunt Regulato
	Mfr.#: R71PR42204000K OMO.#: OMO-R71PR42204000K-KEMET	CAP FILM 2.2UF 10% 630VDC RADIAL

IPA60R060C7XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes