2N3637L/TR

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

Bipolar Transistors - BJT

RoHS:

N

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-5-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

175 V

Collector- Base Voltage VCBO:

175 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

0.3 V

Maximum DC Collector Current:

1 A

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 200 C

DC Current Gain hFE Max:

300 at - 50 mA, - 10 V

Packaging:

Reel

Brand:

Microchip / Microsemi

DC Collector/Base Gain hfe Min:

55 at 100 uA, 10 V

Pd - Power Dissipation:

5 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

100

Subcategory:

Transistors

Tags

2N3637, 2N363, 2N36, 2N3