BSC052N08NS5ATMA1

Mfr. #:: BSC052N08NS5ATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 80V 95A TDSON-8
Lifecycle:: New from this manufacturer.
Datasheet:: BSC052N08NS5ATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: BSC052N08NS5ATMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TDSON-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 80 V

Id - Continuous Drain Current:: 95 A

Rds On - Drain-Source Resistance:: 7.6 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 32 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 83 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 1.27 mm

Length:: 5.9 mm

Series:: OptiMOS 5

Transistor Type:: 1 N-Channel

Width:: 5.15 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 38 S

Fall Time:: 5 ns

Product Type:: MOSFET

Rise Time:: 7 ns

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 19 ns

Typical Turn-On Delay Time:: 12 ns

Part # Aliases:: BSC052N08NS5 SP001232632

Unit Weight:: 0.017870 oz

Tags: BSC052N0, BSC052, BSC05, BSC0, BSC

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

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BSC052N08NS5ATMA1 Description

***ineon SCT: Trans MOSFET N-CH 80V 95A Automotive 8-Pin TDSON EP T/R, PG-TDSON-8, RoHS

***ark: MOSFET, N-CH, 80V, 95A, 150DEG C, 83W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:95A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***nell: MOSFET, N-CH, 80V, 95A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 95A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0044ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 83W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

***sible Micro: Transistor, Power MOSFET, N-Channel, 80V, 100A, 114W, TDSON8

***ark: MOSFET, N-CH, 80V, 100A, 150DEG C, 114W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***nell: MOSFET, N-CH, 80V, 100A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 114W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

***ineon SCT: Single N-Channel 80 V 4 mOhm 54 nC OptiMOS Power Mosfet - PG-TDSON-8, PG-TDSON-8, RoHS

***nell: MOSFET, N-CH, 80V, 100A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 104W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

***ical: Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***nell: MOSFET, N-CH, 80V, 80A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK package, PG-TO263-3, RoHS

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

***emi: Single N-Channel Power MOSFET 60V, 93A, 4.7mΩ 1500 / Tape & Reel

*** Stop Electro: Power Field-Effect Transistor, 93A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ure Electronics: NVMFS5C646NL Series 60 V 4.7 mOhm 93 A Single N-Channel Power MOSFET - SO-8FL

***ark: PT7 N-ch 80/20V Power Trench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, 3.3X3.3 MM

***emi: N-Channel Shielded Gate Power Trench® MOSFET 80V, 68A, 6.5mΩ

***Yang: Trans MOSFET N-CH 80V 14A 8-Pin PQFN T/R - Tape and Reel

***r Electronics: Power Field-Effect Transistor, 68A I(D), 80V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

***emi: PowerTrench® MOSFET, N-Channel, 80V, 100A, 4.2 mΩ,

***ical: Trans MOSFET N-CH 80V 100A Automotive 3-Pin(2+Tab) DPAK T/R

***ure Electronics: Single N-Channel 80 V 100 A 227 W Surface Mount Mosfet - TO-252-3

*** Electronic Components: MOSFET MV7 80/20V1000A N-CH PowerTrench MOSFET

***roFlash: Power Field-Effect Transistor, 80V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ment14 APAC: MOSFET, AEC-Q101, N-CH, 80V, 100A, 227W;

***ark: NMOS DPAK 80V 4.2 MOHM / REEL ROHS COMPLIANT: YES

***el Electronic: IC OFFLINE SWIT PWM OCP HV 8SMD

BSC052N08NS5ATMA1 More Information

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
BSC052N08NS5ATMA1 DISTI # V72:2272_06384033	Infineon Technologies AG	Trans MOSFET N-CH 80V 95A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	678	500:$0.9966 250:$1.1393 100:$1.1515 25:$1.4161 10:$1.4319 1:$1.6635
BSC052N08NS5ATMA1 DISTI # BSC052N08NS5ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 80V 95A 8TDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$0.8877
BSC052N08NS5ATMA1 DISTI # BSC052N08NS5ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 80V 95A 8TDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.0199 500:$1.2309 100:$1.5826 10:$1.9690 1:$2.1800
BSC052N08NS5ATMA1 DISTI # BSC052N08NS5ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 80V 95A 8TDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.0199 500:$1.2309 100:$1.5826 10:$1.9690 1:$2.1800
BSC052N08NS5ATMA1 DISTI # 31010757	Infineon Technologies AG	Trans MOSFET N-CH 80V 95A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	678	500:$0.9966 250:$1.1393 100:$1.1515 25:$1.4161 9:$1.4319
BSC052N08NS5ATMA1 DISTI # BSC052N08NS5	Infineon Technologies AG	Trans MOSFET N-CH 80V 19A 8-Pin TDSON T/R (Alt: BSC052N08NS5) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Asia - 5000	5000:$1.0347 10000:$1.0013 15000:$0.9700 25000:$0.9406 50000:$0.9266 125000:$0.9129 250000:$0.8997
BSC052N08NS5ATMA1 DISTI # BSC052N08NS5ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 80V 19A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC052N08NS5ATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.8939 10000:$0.8619 20000:$0.8309 30000:$0.8029 50000:$0.7879
BSC052N08NS5ATMA1 DISTI # SP001232632	Infineon Technologies AG	Trans MOSFET N-CH 80V 19A 8-Pin TDSON T/R (Alt: SP001232632) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	5000:€1.0129 10000:€0.8439 20000:€0.7789 30000:€0.7229 50000:€0.6749
BSC052N08NS5ATMA1 DISTI # 13AC8333	Infineon Technologies AG	MOSFET, N-CH, 80V, 95A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:95A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0044ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes	3183	1:$1.8300 10:$1.5600 25:$1.4600 50:$1.3500 100:$1.2500 250:$1.1700 500:$1.0900 1000:$0.9010
BSC052N08NS5ATMA1 DISTI # 2725810	Infineon Technologies AG	MOSFET, N-CH, 80V, 95A, TDSON RoHS: Compliant	2188	1:$3.4800 10:$3.1400 100:$2.5300 500:$1.9700 1000:$1.6300
BSC052N08NS5ATMA1 DISTI # C1S322000627596	Infineon Technologies AG	MOSFETs	678	250:$1.0846 100:$1.0963 25:$1.3193 10:$1.3347
BSC052N08NS5ATMA1 DISTI # 2725810	Infineon Technologies AG	MOSFET, N-CH, 80V, 95A, TDSON RoHS: Compliant	2323	5:£1.6600 25:£1.5200 100:£1.2100

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BSC052N08NS5ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes