2MBI200S-120-50

2MBI200S-120-50
Mfr. #:
2MBI200S-120-50
Manufacturer:
Fuji Electric Co Ltd
Description:
IGBT, DUAL, MODULE, 200A, 1200V, NPT, Transistor Polarity:N Channel, DC Collector Current:200A, Collector Emitter Saturation Voltage Vce(on):2.6V, Power Dissipation Pd:1.5kW, Collector Emitter Vo
Lifecycle:
New from this manufacturer.
Datasheet:
2MBI200S-120-50 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
2MBI200S, 2MBI20, 2MBI2, 2MBI, 2MB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
Dual IGBT Module 200 A 1200V NPT; 300A; 2.6V
***ark
DUAL IGBT MODULE 200A 1200V NPT; Transistor Type:IGBT Module; Transistor Polarity:NPT; Voltage Vces:1200V; Max Current Ic Continuous a:300A; Max Voltage Vce Sat:2.6V; Power Dissipation:1500W; Case Style:M234; Termination Type:Screw; ;RoHS Compliant: Yes
***ment14 APAC
IGBT, DUAL, MODULE, 200A, 1200V, NPT; Module Configuration:Dual; Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Voltage Vces:2.6V; Power Dissipation Pd:1.5kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:7; Current Ic @ Vce Sat:200A; Current Ic Continuous a Max:200A; Current Temperature:25°C; External Depth:62mm; External Length / Height:30mm; External Width:108mm; Fall Time tf:450ns; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction Temperature Tj Max:150°C; No. of Transistors:2; Package / Case:M234; Power Dissipation Max:1.5kW; Power Dissipation Pd:1.5kW; Power Dissipation Pd:1.5kW; Pulsed Current Icm:400A; Rise Time:350ns; Termination Type:Screw; Voltage Vces:1.2kV
Part # Mfg. Description Stock Price
2MBI200S-120-50
DISTI # 56P5428
Fuji Electric Co LtdIGBT, DUAL, MODULE, 200A, 1200V, NPT,Transistor Polarity:N Channel,DC Collector Current:200A,Collector Emitter Saturation Voltage Vce(on):2.6V,Power Dissipation Pd:1.5kW,Collector Emitter Voltage V(br)ceo:1.2kV,Product Range:- RoHS Compliant: Yes0
    2MBI200S-120-50
    DISTI # 70212507
    Fuji Electric Co LtdDual IGBT Module 200 A 1200V NPT,300A,2.6V
    RoHS: Compliant
    0
    • 1:$194.0400
    • 5:$183.0600
    • 10:$173.2500
    • 25:$164.4400
    • 50:$156.4900
    2MBI200S-120-50
    DISTI # FE0000000001241
    Fuji Electric Co LtdIGBT STANDARD MODULE
    RoHS: Compliant
    0 in Stock0 on Order
    • 10:$188.9700
    • 1:$203.5000
    2MBI200S-120-50-M
    DISTI # FE0000000001242
    Fuji Electric Co LtdIGBT STANDARD MODULE
    RoHS: Compliant
    0 in Stock0 on Order
    • 10:$188.9700
    • 1:$203.5000
    2MBI200S-120-50
    DISTI # 1689579
    Fuji Electric Co LtdIGBT, DUAL, MODULE, 200A, 1200V, NPT
    RoHS: Compliant
    0
    • 10:$159.3100
    • 5:$162.0100
    • 2:$164.8000
    • 1:$167.7000
    Image Part # Description
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    2MBI200S-120

    Mfr.#: 2MBI200S-120

    OMO.#: OMO-2MBI200S-120-1190

    New and Original
    2MBI200S-120-03

    Mfr.#: 2MBI200S-120-03

    OMO.#: OMO-2MBI200S-120-03-1190

    New and Original
    2MBI200U2A-060

    Mfr.#: 2MBI200U2A-060

    OMO.#: OMO-2MBI200U2A-060-1190

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    Mfr.#: 2MBI200U2A-060-50

    OMO.#: OMO-2MBI200U2A-060-50-1190

    IGBT, DUAL, MODULE, 200A, 600V, NPT, Transistor Polarity:N Channel, DC Collector Current:200A, Collector Emitter Saturation Voltage Vce(on):2.45V, Power Dissipation Pd:660W, Collector Emitter Vol
    2MBI200U4H-120-50

    Mfr.#: 2MBI200U4H-120-50

    OMO.#: OMO-2MBI200U4H-120-50-1190

    IGBT, 2 PACK MODULE 1200V, 200A, M234, Transistor Polarity:N Channel, DC Collector Current:200A, Collector Emitter Saturation Voltage Vce(on):2.05V, Power Dissipation Pd:1.04kW, Collector Emitter
    2MBI200U4H-120E

    Mfr.#: 2MBI200U4H-120E

    OMO.#: OMO-2MBI200U4H-120E-1190

    New and Original
    2MBI200U4H-170

    Mfr.#: 2MBI200U4H-170

    OMO.#: OMO-2MBI200U4H-170-1190

    300A, 1700V, N-CHANNEL IGBT
    Availability
    Stock:
    Available
    On Order:
    4500
    Enter Quantity:
    Current price of 2MBI200S-120-50 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $177.63
    $177.63
    10
    $168.75
    $1 687.49
    100
    $159.87
    $15 986.70
    500
    $150.99
    $75 492.75
    1000
    $142.10
    $142 104.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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