NTD4302T4G

Mfr. #:: NTD4302T4G
Manufacturer:: ON Semiconductor
Description:: MOSFET 30V 68A N-Channel
Lifecycle:: New from this manufacturer.
Datasheet:: NTD4302T4G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: NTD4302T4G Datasheet NTD4302T4G Datasheet (P4-P6)NTD4302T4G Datasheet (P7)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 68 A

Rds On - Drain-Source Resistance:: 7.8 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 75 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 2.38 mm

Length:: 6.73 mm

Series:: NTD4302

Transistor Type:: 1 N-Channel

Type:: MOSFET

Width:: 6.22 mm

Brand:: ON Semiconductor

Forward Transconductance - Min:: 20 S

Fall Time:: 55 ns, 40 ns, 58 ns

Product Type:: MOSFET

Rise Time:: 15 ns, 13 ns, 25 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 85 ns, 55 ns, 40 ns

Typical Turn-On Delay Time:: 11 ns, 11 ns, 15 ns

Unit Weight:: 0.139332 oz

Tags: NTD4302T, NTD430, NTD43, NTD4, NTD

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NTD4302T4G Description

***ure Electronics: N-Channel 30 V 7.8 mOhm 75 W Tab Mount Power MOSFET - TO-252-3

***emi: Single N-Channel Power MOSFET 30V, 18.5A, 10mΩ

***nell: MOSFET, N-CH, 30V, 68A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 68A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0078ohm; Available until stocks are exhausted Alternative available

***emi: Single N-Channel Power MOSFET 30V, 18.5A, 10mΩ

***et: Trans MOSFET N-CH 30V 68A 3-Pin(2+Tab) DPAK Rail

***sible Micro: XTR,PWR,MFT,NTD4302,DPK 30V,68A,RDS(on)=0.010-OHM@10V,N-CHANNEL,D-PAK

***ser: MOSFETs- Power and Small Signal 30V 68A N-Channel

***r Electronics: Power Field-Effect Transistor, 8.4A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***nell: MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.3A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation Pd: 1.87W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 68A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.9V; Voltage Vgs Rds on Measurement: 10V

***emi: Single N-Channel Power MOSFET 30V, 18.5A, 10mΩ

***ser: MOSFETs- Power and Small Signal 30V 68A N-Channel

***ponent Stockers USA: 8.4 A 30 V 0.01 ohm N-CHANNEL Si POWER MOSFET

***r Electronics: Power Field-Effect Transistor, 8.4A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***icroelectronics: N-channel 30 V, 0.0042 Ohm, 75 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET

***r Electronics: Power Field-Effect Transistor, 75A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N CH, 30V, 75A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0042ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C

***emi: PowerTrench® MOSFET, N-Channel, 30V, 58A, 9mΩ

***ark: TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,13A I(D),TO-252AA

***ure Electronics: N-Channel 30 V 58 A 9 mOhm PowerTrench Mosfet TO-252AA

*** Source Electronics: MOSFET N-CH 30V 58A DPAK / Trans MOSFET N-CH 30V 13A 3-Pin(2+Tab) DPAK T/R

***roFlash: Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***nell: MOSFET, N-CH, 30V, 58A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 55W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ure Electronics: STD86N3LH5 Series 30 V 0.005 Ohm 80 A N-Channel STripFET H5 Power Mosfet-DPAK-3

***ical: Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) DPAK T/R

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ark: MOSFET, AEC-Q101, N-CH, 30V, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes

***ure Electronics: N-Channel 33 V 10.5 mOhm Surface Mount SAFeFET Power MOSFET - TO-252-3

***icroelectronics: N-channel 33 V clamped, 9.5 mOhm typ., 70 A fully protected SAFeFET Power MOSFET in a DPAK package

***r Electronics: Power Field-Effect Transistor, 70A I(D), 33V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Market price

Part #	Mfg.	Description	Stock	Price
NTD4302T4G DISTI # 30313036	ON Semiconductor	Trans MOSFET N-CH 30V 68A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	2500:$0.4244
NTD4302T4G DISTI # 30743301	ON Semiconductor	Trans MOSFET N-CH 30V 68A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	2500:$0.5733
NTD4302T4G DISTI # NTD4302T4GOSCT-ND	ON Semiconductor	MOSFET N-CH 30V 8.4A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2415In Stock	1000:$0.5438 500:$0.6889 100:$0.8883 10:$1.1240 1:$1.2700
NTD4302T4G DISTI # NTD4302T4GOSDKR-ND	ON Semiconductor	MOSFET N-CH 30V 8.4A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2415In Stock	1000:$0.5438 500:$0.6889 100:$0.8883 10:$1.1240 1:$1.2700
NTD4302T4G DISTI # NTD4302T4GOSTR-ND	ON Semiconductor	MOSFET N-CH 30V 8.4A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.4928
NTD4302T4G DISTI # NTD4302T4G	ON Semiconductor	Trans MOSFET N-CH 30V 68A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: NTD4302T4G) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.4179 5000:$0.4149 10000:$0.4099 15000:$0.4049 25000:$0.3949
NTD4302T4G DISTI # 82Y7097	ON Semiconductor	MOSFET, N-CH, 30V, 68A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:68A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.9V,Power , RoHS Compliant: Yes	175	1:$1.0500 10:$0.8960 25:$0.8270 50:$0.7580 100:$0.6890 250:$0.6490 500:$0.6090 1000:$0.4800
NTD4302T4G DISTI # 45J2124	ON Semiconductor	N CHANNEL MOSFET, 30V, 18.5A, D-PAK, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:18.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):10mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.9V , RoHS Compliant: Yes	0	1:$0.4260 2500:$0.4210 5000:$0.4150 10000:$0.4100 15000:$0.4040 25000:$0.3970
NTD4302T4G. DISTI # 29AC9041	ON Semiconductor	NFET DPAK 30V 68A 10MOHM , ROHS COMPLIANT: YES	0	1:$0.4260 2500:$0.4210 5000:$0.4150 10000:$0.4100 15000:$0.4040 25000:$0.3970
NTD4302T4G	ON Semiconductor	RoHS: Not Compliant	46347	1000:$0.5300 500:$0.5600 100:$0.5800 25:$0.6100 1:$0.6500
NTD4302T4G DISTI # 863-NTD4302T4G	ON Semiconductor	MOSFET 30V 68A N-Channel RoHS: Compliant	4771	1:$1.0500 10:$0.8960 100:$0.6890 500:$0.6090 1000:$0.4800 2500:$0.4260 10000:$0.4100
NTD4302T4G	ON Semiconductor	N-Channel 30 V 7.8 mOhm 75 W Tab Mount Power MOSFET - TO-252-3 RoHS: Compliant	2500Reel	2500:$0.4100
NTD4302T4G	ON Semiconductor	8.4 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET	1776	1482:$0.4725 297:$0.5400 1:$1.3500
NTD4302T4G	ON Semiconductor	8.4 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET	34	19:$0.7000 5:$1.1200 1:$1.4000
NTD4302T4G	ON Semiconductor	RoHS: Compliant	Europe - 25
NTD4302T4G	ON Semiconductor	INSTOCK	119
NTD4302T4G	ON Semiconductor	INSTOCK	225
NTD4302T4G	ON Semiconductor	INSTOCK	29846
NTD4302T4G DISTI # XSFP00000058253	ON SEMICONDUCTOR	PowerField-EffectTransistor,8.4AI(D),30V,0.01ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET RoHS: Compliant	3365	2500:$0.5467 3365:$0.5125
NTD4302T4G DISTI # 2535541	ON Semiconductor	MOSFET, N-CH, 30V, 68A, TO-252-3 RoHS: Compliant	175	1:$1.6600 10:$1.4200 100:$1.1000 500:$0.9640 1000:$0.7600 2500:$0.6750 10000:$0.6490 25000:$0.6280
NTD4302T4G DISTI # 2535541	ON Semiconductor	MOSFET, N-CH, 30V, 68A, TO-252-3 RoHS: Compliant	2915	5:£0.7650 25:£0.6850 100:£0.5270 250:£0.4970 500:£0.4660

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NTD4302T4G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes