SKM200GB126D

Mfr. #:: SKM200GB126D
Manufacturer:: SEMIKRON
Description:: SEMITRANS, 1200V, 200A
Lifecycle:: New from this manufacturer.
Datasheet:: SKM200GB126D Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Tags: SKM200GB12, SKM200GB1, SKM200GB, SKM200G, SKM200, SKM20, SKM2, SKM

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SKM200GB126D Description

***trelec: IGBT Module SEMITRANS 3 1.2 kV

***ikron: Features: Trench = Trenchgate technology V CE(sat) with positive temperature coefficient High short circuit capability, self limiting to 6 x I C Typical Applications: AC inverter drives UPS Electronic welders

***ark: IGBT MODULE, 1.2KV, 260A, SEMITRANS 3; Continuous Collector Current:260A; Collector Emitter Saturation Voltage:2.1V; Power Dissipation:220W; Operating Temperature Max:150°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

***ment14 APAC: IGBT MODULE, DUAL, 1200V; Transistor Polarity:N Channel; DC Collector Current:260A; Collector Emitter Voltage Vces:2.15V; Power Dissipation Pd:220W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:SEMITRANS 3; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Av Current Ic:260A; Current Ic Continuous a Max:260A; Current Ic Continuous b Max:190A; Current Temperature:25°C; External Depth:61.4mm; External Width:105mm; Fixing Centres:93mm; Fixing Hole Diameter:5.4mm; No. of Transistors:2; Package / Case:SEMITRANS 3; Power Dissipation Pd:220W; Pulsed Current Icm:200A; Rise Time:40ns; SMD Marking:SEMITRANS 3; Termination Type:Screw; Voltage:1.2kV; Voltage Vces:1.2kV

***ical: Trans IGBT Module N-CH 1200V 105A 350000mW 24-Pin EconoPIM3 Tray

***ineon SCT: EconoPIM™ 3 1200V three phase PIM IGBT module with IGBT3 and NTC, AG-ECONO3-3, RoHS

***ment14 APAC: IGBT MODULE, 1200V, ECONOPIM; Transistor Polarity:N Channel; DC Collector Current:105A; Emitter Saturation Voltage Vce(on):2.3V; Power

***ark: IGBT MODULE, 1200V, ECONOPIM; Continuous Collector Current:105A; Collector Emitter Saturation Voltage:2.3V; Power Dissipation:350W; Operating Temperature Max:125°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

***ineon: EconoPIM 3 1200V three phase PIM IGBT module with IGBT3 and NTC | Summary of Features: Low stray inductance module design; High reliability and power density; Copper base plate for optimized heat spread; Solderable pins; Low switching losses; High switching frequency; RoHS-compliant modules | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility; Fast, reliable and low cost mounting concept | Target Applications: drives; medical; induction; aircon

***p One Stop: Trans IGBT Module N-CH 1200V 200A 680000mW 20-Pin ECONO4-1 Tray

***ark: Igbt Module; Continuous Collector Current:150A; Collector Emitter Saturation Voltage:2.15V; Power Dissipation:680W; Operating Temperature Max:150°C; Igbt Termination:stud; Collector Emitter Voltage Max:1.2Kv; Product Range:- Rohs Compliant: Yes

***ineon: EconoPACK 4 1200V sixpack IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Extended Operation Temperature T(vj op); Low Switching Losses; Low V(CEsat); V(CEsat) with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; cav; ups

***ow.cn: Trans IGBT Module N-CH 1200V 135A 500000mW Automotive 20-Pin ECONO4-1 Tray

***ineon SCT: EconoPACK™ 4 1200V sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology, AG-ECONO4-1, RoHS

***ment14 APAC: IGBT, POW, QUAD W NTC, 1200V, 100A; Module Configuration:Six; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:20; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:500W

***ineon: EconoPACK 4 1200V sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Extended Operation Temperature T(vj op); Low Switching Losses; Low V(CEsat); V(CEsat) with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; cav; ups

***ical: Trans IGBT Module N-CH 1200V 220A 690000mW 7-Pin Case SP-6 Tube

*** Stop Electro: Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel

***rochip SCT: High Voltage Power Module, Dual common source, 1200V, RoHS

***ark: PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes

***i-Key: POWER MOD IGBT TRENCH DL SRC SP6

***ical: Trans IGBT Module N-CH 1200V 280A 890000mW 7-Pin Case SP-6 Tube

*** Stop Electro: Insulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel

***rochip SCT: High Voltage Power Module, Phase leg, 1200V, RoHS

***ark: PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes

***i-Key: POWER MODULE IGBT 1200V 200A SP6

*** Stop Electro: Insulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel

***et: Trans IGBT Module N-CH 1.2KV 280A 7-Pin Case SP6

***rochip SCT: High Voltage Power Module, Dual common source, 1200V, RoHS

***ark: PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes

***i-Key: POWER MOD IGBT TRENCH DL SRC SP6

Market price

Part #	Mfg.	Description	Stock	Price
SKM 200 GB 126 D DISTI # 91H1922	SEMIKRON	IGBT MODULE, 1.2KV, 260A, SEMITRANS 3,Transistor Polarity:N Channel,DC Collector Current:260A,Collector Emitter Saturation Voltage Vce(on):2.15V,Power Dissipation Pd:220W,Collector Emitter Voltage V(br)ceo:1.2kV RoHS Compliant: Yes	0	100:$106.2400 50:$113.0400 25:$114.7400 10:$116.4400 5:$119.8400 1:$123.2400
SKM200GB126D DISTI # 71043274	SEMIKRON	SEMITRANS,1200V,200A RoHS: Compliant	0	1:$196.4100 12:$186.2500 48:$174.2300 96:$163.6800 144:$154.3300
SKM200GB126D DISTI # R1107998	SEMIKRON	SKM200GB126D RoHS: Compliant	0	1:$291.9000 2:$256.8000 5:$233.6000 10:$219.2000 20:$204.0000
SKM200GB126D DISTI # 4682460	SEMIKRON	IGBT MODULE DUAL SKM200GB126D 200A 1200V, EA	41	20:£115.2800 10:£123.5800 5:£131.6900 2:£144.8100 1:£164.5800
SKM200GB126D DISTI # SKM200GB126D	SEMIKRON	POWER IGBT TRANSISTOR RoHS: Compliant	0
SKM200GB126D DISTI # 1095517	SEMIKRON	RoHS: Compliant	0	50:$183.8800 10:$187.0600 1:$190.3400

Image	Part #	Description
	Mfr.#: SKM200GAH123DKL11 OMO.#: OMO-SKM200GAH123DKL11-1190	New and Original
	Mfr.#: SKM200GAH123DKL110 OMO.#: OMO-SKM200GAH123DKL110-1190	New and Original
	Mfr.#: SKM200GAH123DKLD OMO.#: OMO-SKM200GAH123DKLD-1190	New and Original
	Mfr.#: SKM200GAL123DKLD110 OMO.#: OMO-SKM200GAL123DKLD110-1190	New and Original
	Mfr.#: SKM200GAL126DKL OMO.#: OMO-SKM200GAL126DKL-1190	New and Original
	Mfr.#: SKM200GAR123D OMO.#: OMO-SKM200GAR123D-1190	New and Original
	Mfr.#: SKM200GB12T4SIC2 OMO.#: OMO-SKM200GB12T4SIC2-1190	POWER IGBT TRANSISTOR
	Mfr.#: SKM200GBD123D1S OMO.#: OMO-SKM200GBD123D1S-1190	New and Original
	Mfr.#: SKM200GBD1261S OMO.#: OMO-SKM200GBD1261S-1190	New and Original
	Mfr.#: SKM200GBD126D1S OMO.#: OMO-SKM200GBD126D1S-1190	New and Original

SKM200GB126D

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes