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APT30GT60BRG

APT30GT60BRG
Mfr. #:
APT30GT60BRG
Manufacturer:
Microchip / Microsemi
Description:
IGBT Transistors FG, IGBT, 600V, 30A, TO-247, RoHS
Lifecycle:
New from this manufacturer.
Datasheet:
APT30GT60BRG Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT30GT60BRG DatasheetAPT30GT60BRG Datasheet (P4-P6)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Microchip
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
600 V
Collector-Emitter Saturation Voltage:
2 V
Maximum Gate Emitter Voltage:
30 V
Continuous Collector Current at 25 C:
64 A
Pd - Power Dissipation:
250 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Packaging:
Tube
Continuous Collector Current Ic Max:
64 A
Height:
5.31 mm
Length:
21.46 mm
Operating Temperature Range:
- 55 C to + 150 C
Width:
16.26 mm
Brand:
Microchip / Microsemi
Continuous Collector Current:
64 A
Gate-Emitter Leakage Current:
100 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
1
Subcategory:
IGBTs
Tradename:
Thunderbolt IGBT
Unit Weight:
1.340411 oz
Tags
APT30GT60B, APT30GT, APT30G, APT30, APT3, APT
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 64A 3-Pin(3+Tab) TO-247
*** Stop Electro
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247
***th Star Micro
Insulated Gate Bipolar Transistor - NPT Standard Speed
***DA Technology Co., Ltd.
Product Description Demo for Development.
***S
French Electronic Distributor since 1988
***p One Stop
Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***eco
Transistor IGBT Chip Negative Channel 600 Volt 55A 3-Pin(3+Tab) TO-247AC
***(Formerly Allied Electronics)
600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE | Infineon IRG4PC50UPBF
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2 V Current release time: 120 ns Power dissipation: 200 W
***ment14 APAC
IGBT, 600V, 55A, TO-247AC; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Device Marking:IRG4PC50U; Fall Time Max:120ns; Fall Time tf:130ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:20ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***Yang
TO-247, SINGLE, N-CHANNEL, 600V SMPS IGBT - Bulk
*** Electronic Components
IGBT Transistors Sgl N-Ch 600V SMPS
***nell
IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:45A; Voltage, Vce Sat Max:2.5V; Power Dissipation:167W; Case Style:TO-247; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:108A; No. of Pins:3; Pin Format:GCE; Power, Pd:167W; Power, Ptot:167W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:53ns; Time, Rise:10ns; Transistors, No. of:1
***p One Stop Global
Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***(Formerly Allied Electronics)
600V ULTRAFAST 8-60 KHZ COPACK IGBT IN A TO-247AC PACKAGE | Infineon IRG4PC50UDPBF
***hine Compare
Igbt 600V 55A 200W TO247AC Igbt 600V 55A 200W TO247AC Igbt 600V 55A 200W TO247AC
*** Electronics
IR - IR IRG4PC50UD IGBT DEVICE IGBT W/DIODE 600V 55A TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.65 V Current release time: 74 ns Power dissipation: 200 W
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Fall Time Max:110ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:25ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ineon SCT
600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS
***et
Trans IGBT Chip N-CH 600V 55A 3-Pin(3+Tab) TO-247AC
***icontronic
Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AD
***ineon
Target Applications: Pump; Solar; UPS; Welding
*** Electronic Components
IGBT Transistors 600V UltraFast 8-60kHz
***i-Key Marketplace
IRG4PC50 - DISCRETE IGBT WITH AN
***ment14 APAC
IGBT, 600V, 55A, TO-247AC; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Device Marking:IRG4PC50UD; Fall Time Max:110ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:25ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 80A 345000mW 3-Pin(3+Tab) TO-247 Tube
*** Stop Electro
Rectifier Diode, 1 Phase, 2 Element, 40A, 600V V(RRM), Silicon, TO-247AD
***th Star Micro
Insulated Gate Bipolar Transistor - NPT Standard Speed
***icroelectronics
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
***ical
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 600V, 60A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 600V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 1.55V; Transistor Case Style: TO-247; No. of Pins
Part # Mfg. Description Stock Price
APT30GT60BRG
DISTI # APT30GT60BRG-ND		Microsemi CorporationIGBT 600V 64A 250W TO247
RoHS: Compliant
Min Qty: 90
Container: Tube		Temporarily Out of Stock
  • 90:$7.0258
APT30GT60BRG
DISTI # 494-APT30GT60BRG		Microsemi CorporationIGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency - Single
RoHS: Compliant		64
  • 1:$8.0000
  • 10:$7.2000
  • 25:$6.5600
  • 100:$5.9200
  • 250:$5.4000
  • 500:$4.9300
  • 1000:$4.3000
APT30GT60BRG
DISTI # APT30GT60BRG		Microsemi CorporationPOWER IGBT TRANSISTOR
RoHS: Compliant		0
  • 79:$4.2800
  • 100:$4.1700
  • 500:$4.1200
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Availability
Stock:
58
On Order:
2041
Enter Quantity:
Current price of APT30GT60BRG is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$8.00
$8.00
10
$7.20
$72.00
25
$6.56
$164.00
100
$5.92
$592.00
250
$5.40
$1 350.00
500
$4.93
$2 465.00
1000
$4.30
$4 300.00
2500
$3.95
$9 875.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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