NGTG25N120FL2WG

NGTG25N120FL2WG
Mfr. #:
NGTG25N120FL2WG
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 1200V/25 FAST IGBT ONLY F
Lifecycle:
New from this manufacturer.
Datasheet:
NGTG25N120FL2WG Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTG25N120FL2WG DatasheetNGTG25N120FL2WG Datasheet (P4-P6)NGTG25N120FL2WG Datasheet (P7-P9)NGTG25N120FL2WG Datasheet (P10)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Packaging:
Tube
Brand:
ON Semiconductor
Product Type:
IGBT Transistors
Factory Pack Quantity:
30
Subcategory:
IGBTs
Unit Weight:
0.241847 oz
Tags
NGTG, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247
***ark
1200V/25 Fast Igbt Only Fsii To-247 / Tube
***ical
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
***ure Electronics
IGBT Transistors 1200V/25 FAST IGBT FSII T
***i-Key
IGBT FIELD STOP 1200V 50A TO247
***ernational Rectifier
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
***ical
Trans IGBT Chip N-CH 1200V 50A 179000mW 3-Pin(3+Tab) TO-247AD Tube
*** Source Electronics
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS | IGBT 1200V 50A 179W TO247
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247
***el Electronic
IGBT Transistors IGBT & Power Bipolar
***i-Key
IGBT H-SERIES 1200V 25A TO-247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***et
Trans IGBT Chip N-CH 1200V 50A 3-Pin TO-247AD Tube
***or
IGBT W/ULTRA-LOW VF DIODE FOR IN
*** Electronic Components
IGBT 1200V 50A 179W TO247AD
***el Electronic
CONN SWH RCPT STR 50 OHM SMD
***ark
IGBT TO-247, TUBE
***p One Stop Global
Trans IGBT Chip N-CH 1200V 41A 160000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PH40U Series 1200 V 21 A N-Channel UltraFast Speed IGBT - TO-247AC
***ineon SCT
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.43 V Current release time: 180 ns Power dissipation: 160 W
***ment14 APAC
IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:41A; Collector Emitter Voltage Vces:3.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40U; Fall Time Max:190ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***icroelectronics
30 A, 1200 V short circuit rugged IGBT with Ultrafast diode
***et
Trans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-247
*** Electronic Components
IGBT Transistors 30A 1200V short circuit rugged IGBT
Part # Mfg. Description Stock Price
NGTG25N120FL2WG
DISTI # 29035659
ON SemiconductorTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
180
  • 1000:$2.2330
  • 500:$2.4905
  • 250:$2.7710
  • 180:$2.9240
NGTG25N120FL2WG
DISTI # NGTG25N120FL2WG-ND
ON SemiconductorIGBT 1200V 25A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube
90In Stock
  • 1020:$2.7104
  • 510:$3.1909
  • 120:$3.7268
  • 30:$4.2813
  • 1:$5.0200
NGTG25N120FL2WG
DISTI # NGTG25N120FL2WG
ON SemiconductorTrans IGBT Chip N-CH 1200V 50A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTG25N120FL2WG)
RoHS: Compliant
Min Qty: 180
Container: Tube
Americas - 0
  • 180:$2.2900
  • 240:$2.1900
  • 420:$2.1900
  • 900:$2.1900
  • 1800:$2.0900
NGTG25N120FL2WGON Semiconductor 
RoHS: Not Compliant
32220
  • 1000:$2.8800
  • 500:$3.0300
  • 100:$3.1600
  • 25:$3.2900
  • 1:$3.5500
NGTG25N120FL2WG
DISTI # 863-NGTG25N120FL2WG
ON SemiconductorIGBT Transistors 1200V/25 FAST IGBT ONLY F
RoHS: Compliant
180
  • 1:$4.6600
  • 10:$3.9600
  • 100:$3.4400
  • 250:$3.2600
  • 500:$2.9300
  • 1000:$2.4700
  • 2500:$2.3500
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Availability
Stock:
60
On Order:
2043
Enter Quantity:
Current price of NGTG25N120FL2WG is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$4.66
$4.66
10
$3.96
$39.60
100
$3.44
$344.00
250
$3.26
$815.00
500
$2.93
$1 465.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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