C3M0016120K

Product Attribute

Attribute Value

Manufacturer:

Cree, Inc.

Product Category:

MOSFET

RoHS:

Y

Technology:

SiC

Mounting Style:

Through Hole

Package / Case:

TO-247-4

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

1.2 kV

Id - Continuous Drain Current:

115 A

Rds On - Drain-Source Resistance:

28.8 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.8 V

Vgs - Gate-Source Voltage:

15 V

Qg - Gate Charge:

211 nC

Minimum Operating Temperature:

- 40 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

556 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Transistor Type:

1 N-Channel

Brand:

Cree, Inc.

Fall Time:

13 ns

Product Type:

MOSFET

Rise Time:

33 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

65 ns

Typical Turn-On Delay Time:

34 ns

Tags

C3M00, C3M0, C3M