2SB1238TV2Q

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

Through Hole

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

80 V

Collector- Base Voltage VCBO:

- 80 V

Emitter- Base Voltage VEBO:

5 V

Maximum DC Collector Current:

0.7 A

Gain Bandwidth Product fT:

120 MHz

Maximum Operating Temperature:

+ 150 C

DC Current Gain hFE Max:

120 at 100 mA, 3 V

Height:

4.4 mm

Length:

6.8 mm

Packaging:

Ammo Pack

Width:

2.5 mm

Brand:

ROHM Semiconductor

Continuous Collector Current:

- 0.7 A

DC Collector/Base Gain hfe Min:

120

Pd - Power Dissipation:

1000 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

2500

Subcategory:

Transistors

Tags

2SB1238T, 2SB1238, 2SB123, 2SB12, 2SB1, 2SB