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IKP39N65ES5XKSA1

IKP39N65ES5XKSA1
Mfr. #:
IKP39N65ES5XKSA1
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors
Lifecycle:
New from this manufacturer.
Datasheet:
IKP39N65ES5XKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IKP39N65ES5XKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-220-2
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
650 V
Collector-Emitter Saturation Voltage:
1.45 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
62 A
Pd - Power Dissipation:
188 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 175 C
Series:
IKP39
Brand:
Infineon Technologies
Gate-Emitter Leakage Current:
100 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
500
Subcategory:
IGBTs
Tradename:
TRENCHSTOP 5 S5
Part # Aliases:
IKP39N65ES5 SP002882512
Tags
IKP3, IKP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
Part # Mfg. Description Stock Price
IKP39N65ES5XKSA1
DISTI # V99:2348_23335948		Infineon Technologies AGINDUSTRY 140
  • 500000:$1.8910
  • 250000:$1.8950
  • 50000:$2.4740
  • 5000:$3.6370
  • 500:$3.8400
IKP39N65ES5XKSA1
DISTI # V36:1790_23335948		Infineon Technologies AGINDUSTRY 140
  • 500000:$1.7590
  • 250000:$1.7630
  • 50000:$2.3770
  • 5000:$3.6230
  • 500:$3.8400
IKP39N65ES5XKSA1
DISTI # IKP39N65ES5XKSA1-ND		Infineon Technologies AGIGBT 650V 39A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		500In Stock
  • 2500:$2.0317
  • 500:$2.5294
  • 100:$2.9713
  • 25:$3.4284
  • 10:$3.6270
  • 1:$4.0400
IKP39N65ES5XKSA1
DISTI # IKP39N65ES5XKSA1		Infineon Technologies AGHigh Speed Soft Switching IGBT 650V 39A 3-Pin TO-220 Through Hole - Rail/Tube (Alt: IKP39N65ES5XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
    IKP39N65ES5XKSA1
    DISTI # SP002882512    		Infineon Technologies AGHigh Speed Soft Switching IGBT 650V 39A 3-Pin TO-220 Through Hole (Alt: SP002882512)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1000:€1.4900
    • 100:€1.5900
    • 500:€1.5900
    • 25:€1.6900
    • 50:€1.6900
    • 10:€1.8900
    • 1:€2.3900
    IKP39N65ES5XKSA1
    DISTI # 02AH1739    		Infineon Technologies AGIGBT, 650V, 62A, 175DEG C, 188W,DC Collector Current:62A,Collector Emitter Saturation Voltage Vce(on):1.45V,Power Dissipation Pd:188W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-220,No. of Pins:3Pins,RoHS Compliant: Yes0
    • 500:$2.4200
    • 250:$2.7100
    • 100:$2.8500
    • 50:$3.0000
    • 25:$3.1400
    • 10:$3.2900
    • 1:$3.8800
    IKP39N65ES5XKSA1
    DISTI # 726-IKP39N65ES5XKSA1    		Infineon Technologies AGIGBT Transistors
    RoHS: Compliant    		470
    • 1:$3.8400
    • 10:$3.2600
    • 100:$2.8200
    • 250:$2.6800
    • 500:$2.4000
    • 1000:$2.0300
    • 2500:$1.9300
    IKP39N65ES5XKSA1
    DISTI # 3051962    		Infineon Technologies AGIGBT, 650V, 62A, 175DEG C, 188W0
    • 500:£1.8600
    • 250:£2.0300
    • 100:£2.1500
    • 10:£2.5300
    • 1:£3.1200
    IKP39N65ES5XKSA1
    DISTI # 3051962    		Infineon Technologies AGIGBT, 650V, 62A, 175DEG C, 188W
    RoHS: Compliant    		0
    • 1000:$2.7400
    • 500:$2.8700
    • 250:$3.0700
    • 100:$3.2300
    • 10:$3.5600
    • 1:$4.4500
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    Availability
    Stock:
    465
    On Order:
    2448
    Enter Quantity:
    Current price of IKP39N65ES5XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $3.84
    $3.84
    10
    $3.26
    $32.60
    100
    $2.82
    $282.00
    250
    $2.68
    $670.00
    500
    $2.40
    $1 200.00
    1000
    $2.03
    $2 030.00
    2500
    $1.93
    $4 825.00
    5000
    $1.85
    $9 250.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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