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SIHB120N60E-GE3

SIHB120N60E-GE3
Mfr. #:
SIHB120N60E-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Lifecycle:
New from this manufacturer.
Datasheet:
SIHB120N60E-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SIHB120N60E-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
25 A
Rds On - Drain-Source Resistance:
120 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
45 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
179 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Series:
E
Transistor Type:
1 N-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
6 S
Fall Time:
33 ns
Product Type:
MOSFET
Rise Time:
65 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
31 ns
Typical Turn-On Delay Time:
19 ns
Tags
SIHB12, SIHB1, SIHB, SIH
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
4th Gen E Series MOSFETs
Vishay Semiconductors 4th Gen E Series MOSFETs are low Figure-Of-Merit (FOM) MOSFETs with E series technology. The 4th Gen E series MOSFETs feature low effective capacitance and reduced switching and conduction losses. These MOSFETs are avalanche energy rated (UIS). The 4th Gen MOSFETs are available in TO-220AB, PowerPAK® SO-8L, PowerPAK® 8 x 8, DPAK (TO-252), and Thin-Lead TO-220 FULLPAK packages. Typical applications include server and telecom power supplies, lighting, industrial, Switch Mode Power Supplies (SMPS), and Power Factor Correction (PFC) power supplies.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHB120N60E-GE3
DISTI # V99:2348_22831174		Vishay IntertechnologiesSIHB120N60E-GE31000
  • 25:$3.9140
  • 10:$4.5000
  • 1:$5.4516
SIHB120N60E-GE3
DISTI # SIHB120N60E-GE3-ND		Vishay SiliconixMOSFET N-CHAN 650V D2PAK (TO-263
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 3000:$2.6296
  • 1000:$2.7680
  • 100:$3.8554
  • 25:$4.4484
  • 10:$4.7060
  • 1:$5.2400
SIHB120N60E-GE3
DISTI # 33739827		Vishay IntertechnologiesSIHB120N60E-GE31000
  • 25:$3.9140
  • 10:$4.5000
  • 3:$5.4516
SIHB120N60E-GE3
DISTI # 78-SIHB120N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		1000
  • 1:$5.2700
  • 10:$4.3600
  • 100:$3.5900
  • 250:$3.4800
  • 500:$3.1200
SIHB120N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		Americas -
    Image Part # Description
    SIHB120N60E-GE3

    Mfr.#: SIHB120N60E-GE3

    OMO.#: OMO-SIHB120N60E-GE3

    		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB120N60E-GE3

    Mfr.#: SIHB120N60E-GE3

    OMO.#: OMO-SIHB120N60E-GE3-VISHAY

    		 MOSFET N-CHAN 650V D2PAK (TO-263
    Availability
    Stock:
    Available
    On Order:
    1984
    Enter Quantity:
    Current price of SIHB120N60E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $5.27
    $5.27
    10
    $4.36
    $43.60
    100
    $3.59
    $359.00
    250
    $3.48
    $870.00
    500
    $3.12
    $1 560.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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