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MG12200D-BN2MM

MG12200D-BN2MM
Mfr. #:
MG12200D-BN2MM
Manufacturer:
Littelfuse
Description:
IGBT Modules 1200V 200A Dual
Lifecycle:
New from this manufacturer.
Datasheet:
MG12200D-BN2MM Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
MG12200D-BN2MM more Information
Product Attribute
Attribute Value
Manufacturer:
Littelfuse
Product Category:
IGBT Modules
RoHS:
Y
Product:
IGBT Silicon Modules
Configuration:
Dual
Collector- Emitter Voltage VCEO Max:
1200 V
Collector-Emitter Saturation Voltage:
1.8 V
Continuous Collector Current at 25 C:
300 A
Gate-Emitter Leakage Current:
400 nA
Pd - Power Dissipation:
1400 W
Package / Case:
Package D
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Packaging:
Bulk
Series:
MG12200D
Brand:
Littelfuse
Mounting Style:
Chassis Mount
Maximum Gate Emitter Voltage:
20 V
Product Type:
IGBT Modules
Factory Pack Quantity:
1
Subcategory:
IGBTs
Unit Weight:
10.053079 oz
Tags
MG122, MG12, MG1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    D***y
    D***y
    US

    excellent

    2019-04-13
    E**x
    E**x
    HU

    OK!

    2019-06-05
    O***M
    O***M
    RU

    It's okay.

    2019-02-18
***ark
Igbt Module, Dual Npn, 1.2Kv, 290A
***i-Key
IGBT 1200V 290A 1050W PKG D
***
1200V 200A D-PACKAGE
Silicon IGBT Power Modules
Littelfuse Silicon IGBT Power Modules ensure high efficiency and fast switching by combining simple MOSFET gate-drive with the high current and low saturation voltage switching capability of bipolar transistors. These features make them well-suited for a wide range of power conversion applications. In addition, the positive temperature coefficient of the modules allows for ease in paralleling to boost the current capability of the system. The modules are rated up to 1700V and 600A in industry standard packages and common topologies.
Part # Mfg. Description Stock Price
MG12200D-BN2MM
DISTI # F6482-ND		Littelfuse IncIGBT 1200V 290A 1050W PKG D
RoHS: Compliant
Min Qty: 1
Container: Bulk		20In Stock
  • 25:$111.1728
  • 10:$115.2010
  • 1:$123.2600
MG12200D-BN2MM
DISTI # 576-MG12200D-BN2MM		Littelfuse IncIGBT Modules 1200V 200A Dual
RoHS: Compliant		8
  • 1:$123.2600
  • 5:$120.8400
  • 10:$115.2100
MG12200D-BN2MMLittelfuse IncIGBT Modules 1200V 200A DualAmericas -
    Image Part # Description
    FF400R12KT3

    Mfr.#: FF400R12KT3

    OMO.#: OMO-FF400R12KT3

    		 IGBT Modules N-CH 1.2KV 580A
    FF400R12KT3

    Mfr.#: FF400R12KT3

    OMO.#: OMO-FF400R12KT3-125

    		 IGBT Modules N-CH 1.2KV 580A
    Availability
    Stock:
    Available
    On Order:
    1991
    Enter Quantity:
    Current price of MG12200D-BN2MM is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $123.26
    $123.26
    5
    $120.84
    $604.20
    10
    $115.21
    $1 152.10
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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