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F3L11MR12W2M1B65BOMA1

F3L11MR12W2M1B65BOMA1
Mfr. #:
F3L11MR12W2M1B65BOMA1
Manufacturer:
Infineon Technologies
Description:
IGBT Modules Easy 2B CoolSiC(TM) MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
F3L11MR12W2M1B65BOMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
F3L11MR12W2M1B65BOMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
IGBT Modules
RoHS:
Y
Technology:
SiC
Product:
IGBT Silicon Carbide Modules
Configuration:
Dual
Collector- Emitter Voltage VCEO Max:
1.2 kV
Collector-Emitter Saturation Voltage:
1.75 V
Continuous Collector Current at 25 C:
50 A
Gate-Emitter Leakage Current:
100 nA
Pd - Power Dissipation:
20 mW
Package / Case:
Module
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Packaging:
Tray
Brand:
Infineon Technologies
Mounting Style:
Screw Mount
Maximum Gate Emitter Voltage:
20 V
Product Type:
IGBT Modules
Factory Pack Quantity:
15
Subcategory:
IGBTs
Tradename:
Easy 2B CoolSiC
Part # Aliases:
F3L11MR12W2M1_B65 SP001684176
Tags
F3L1, F3L
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
1200V CoolSiC™ Modules
Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.
Image Part # Description
F3L11MR12W2M1B65BOMA1

Mfr.#: F3L11MR12W2M1B65BOMA1

OMO.#: OMO-F3L11MR12W2M1B65BOMA1

 IGBT Modules Easy 2B CoolSiC(TM) MOSFET
Availability
Stock:
Available
On Order:
1988
Enter Quantity:
Current price of F3L11MR12W2M1B65BOMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$204.30
$204.30
5
$199.39
$996.95
10
$194.43
$1 944.30
25
$191.71
$4 792.75
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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