CMPA5585025F

CMPA5585025F
Mfr. #:
CMPA5585025F
Manufacturer:
N/A
Description:
RF Amplifier GaN MMIC Power Amp 5.5-8.5GHz, 25 Watt
Lifecycle:
New from this manufacturer.
Datasheet:
CMPA5585025F Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CMPA5585025F more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF Amplifier
RoHS:
Y
Mounting Style:
SMD/SMT
Package / Case:
SOT-86
Type:
Buffer Amplifier
Technology:
GaAs InGaP
Operating Frequency:
0 Hz to 6 GHz
Gain:
19.5 dB
Operating Supply Voltage:
4.1 V
NF - Noise Figure:
3.1 dB
Test Frequency:
900 MHz
OIP3 - Third Order Intercept:
20.7 dBm
Operating Supply Current:
20 mA
Maximum Operating Temperature:
+ 177 C
Packaging:
Reel
Brand:
Qorvo
Number of Channels:
1 Channel
Input Return Loss:
25 dB
Moisture Sensitive:
Yes
Product Type:
RF Amplifier
Factory Pack Quantity:
3000
Subcategory:
Wireless & RF Integrated Circuits
Part # Aliases:
1066835
Tags
CMPA558502, CMPA55, CMPA5, CMPA, CMP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
RF & MW POWER AMPLIFIER
***i-Key
IC AMP GP 5.5GHZ-8.5GHZ 440208
GaN HEMT based MMICs
Cree GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) based MMICs (monolithic microwave integrated circuits) enable extremely wide bandwidths to be achieved in small footprint packages. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors.Learn More
Part # Mfg. Description Stock Price
CMPA5585025F
DISTI # CMPA5585025F-ND
WolfspeedIC AMP GP 5.5GHZ-8.5GHZ 440208
RoHS: Compliant
Min Qty: 1
Container: Tray
On Order
  • 1:$415.2800
CMPA5585025F-TB
DISTI # CMPA5585025F-TB-ND
WolfspeedEVAL BOARD FOR CMPA5585025F
RoHS: Not compliant
Min Qty: 1
Container: Bulk
Temporarily Out of Stock
  • 1:$715.0000
CMPA5585025F
DISTI # 941-CMPA5585025F
Cree, Inc.RF Amplifier GaN MMIC Power Amp 5.5-8.5GHz, 25 Watt
RoHS: Compliant
37
  • 1:$415.2800
CMPA5585025F-TB
DISTI # 941-CMPA5585025F-TB
Cree, Inc.RF Development Tools Test Board without GaN MMIC
RoHS: Not compliant
2
  • 1:$715.0000
CMPA5585025F
DISTI # CMPA5585025F
WolfspeedRF & MW POWER AMPLIFIER
RoHS: Compliant
0
  • 75:$415.2800
CMPA5585025F-TB
DISTI # CMPA5585025F-TB
WolfspeedRF & MW AMPLIFIER EVALUATION BOARD/DESIGNER KIT
RoHS: Compliant
0
  • 2:$715.0000
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CMPA5585030F

Mfr.#: CMPA5585030F

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Mfr.#: BSC109N10NS3 G

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Availability
Stock:
112
On Order:
2095
Enter Quantity:
Current price of CMPA5585025F is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$443.12
$443.12
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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