IRFU3806PBF

IRFU3806PBF
Mfr. #:
IRFU3806PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 60V 43A I-PAK
Lifecycle:
New from this manufacturer.
Datasheet:
IRFU3806PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
International Rectifier
Product Category
Transistors - FETs, MOSFETs - Single
Packaging
Tube
Unit-Weight
0.139332 oz
Mounting-Style
Through Hole
Package-Case
IPAK-3
Technology
Si
Number-of-Channels
1 Channel
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
71 W
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
43 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Rds-On-Drain-Source-Resistance
12.6 mOhms
Transistor-Polarity
N-Channel
Qg-Gate-Charge
22 nC
Tags
IRFU3, IRFU, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, N Ch., 60V, 42A, 15.8 MOHM, 22 NC QG, I-PAK, Pb-Free
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ment14 APAC
MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:71W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:43A; Package / Case:IPAK; Power Dissipation Pd:71W; Pulse Current Idm:170A; Termination Type:Through Hole; Turn Off Time:49ns; Turn On Time:6.3ns; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ser
MOSFETs- Power and Small Signal 24V 60A N-Channel No-Cancel/No-Return
***i-Key
MOSFET N-CH 60V 24A IPAK
***el Electronic
RES SMD 3.3K OHM 1% 1/4W 1206
***p One Stop Global
Trans MOSFET N-CH 60V 20A 3-Pin(3+Tab) DPAK-SL Rail
***ser
MOSFETs- Power and Small Signal 60V 20A N-Channel
***r Electronics
Power Field-Effect Transistor, 20A I(D), 60V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***-Wing Technology
Tube Through Hole N-Channel Single Mosfet Transistor 24A Ta 24A 62.5W 27ns
***r Electronics
Power Field-Effect Transistor, 24A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ser
MOSFETs- Power and Small Signal 24V 60A N-Channel
***ure Electronics
Single N-Channel 55 V 0.027 Ohm 65 nC HEXFET® Power Mosfet - IPAK
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:44A; On Resistance, Rds(on):27mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:IPAK ;RoHS Compliant: Yes
***nell
MOSFET, N, 55V, 37A, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:37A; Resistance, Rds On:0.027ohm; Case Style:TO-251 (I-Pak); Case Style, Alternate:I-PAK; Current, Idm Pulse:160A; Power Dissipation:69W; Power, Pd:69W; Resistance, Rds on @ Vgs = 10V:27ohm; Thermal Resistance, Junction to Case A:1.8°C/W; Time, t Off:60ns; Time, t On:69ns; Voltage, Vds Max:55V
***ure Electronics
Single N-Channel 60 V 0.2 Ohms Through Hole Power Mosfet - IPAK (TO-251)
***(Formerly Allied Electronics)
IRFU014PBF N-channel MOSFET Transistor, 7.7 A, 60 V, 3-Pin IPAK
***nell
MOSFET, N, 60V, 7.7A, I-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.4A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Diss
*** Stop Electro
Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***(Formerly Allied Electronics)
MOSFET, N Ch., 60V, 77A, 8.4 MOHM, 51 NC QG, I-PAK, Pb-Free
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ment14 APAC
MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; SVHC:No SVHC (20-Jun-2011); Current Id Max:56A; Package / Case:IPAK; Power Dissipation Pd:110W; Pulse Current Idm:315A; Termination Type:Through Hole; Turn Off Time:55ns; Turn On Time:13ns; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Part # Mfg. Description Stock Price
IRFU3806PBF
DISTI # IRFU3806PBF-ND
Infineon Technologies AGMOSFET N-CH 60V 43A I-PAK
RoHS: Compliant
Min Qty: 900
Container: Tube
Limited Supply - Call
    IRFU3806PBFInfineon Technologies AGPower Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
    RoHS: Compliant
    2319
    • 1000:$0.4100
    • 500:$0.4300
    • 100:$0.4500
    • 25:$0.4700
    • 1:$0.5000
    IRFU3806PBFInternational RectifierPower Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
    RoHS: Compliant
    1120
    • 1000:$0.4100
    • 500:$0.4300
    • 100:$0.4500
    • 25:$0.4700
    • 1:$0.5000
    IRFU3806PBF
    DISTI # 942-IRFU3806PBF
    Infineon Technologies AGMOSFET MOSFT 60V 43A 16.2mOhm 22nC Qg
    RoHS: Compliant
    0
      IRFU3806PBF
      DISTI # 1602239
      Infineon Technologies AGMOSFET, N, I-PAK
      RoHS: Compliant
      0
      • 1:$1.9800
      • 10:$1.6500
      • 100:$1.2700
      • 500:$1.0800
      • 1000:$0.9360
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      IRFU3710ZPBF

      Mfr.#: IRFU3710ZPBF

      OMO.#: OMO-IRFU3710ZPBF

      MOSFET MOSFT 100V 56A 18mOhm 69nC Qg
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      OMO.#: OMO-IRFU3711-INFINEON-TECHNOLOGIES

      MOSFET N-CH 20V 100A I-PAK
      IRFU310PBF,IRFU310,FU310

      Mfr.#: IRFU310PBF,IRFU310,FU310

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      New and Original
      IRFU321

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      Power Field-Effect Transistor, 3.1A I(D), 350V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
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      OMO.#: OMO-IRFU3710Z-INFINEON-TECHNOLOGIES

      MOSFET N-CH 100V 42A I-PAK
      IRFU3910PBF

      Mfr.#: IRFU3910PBF

      OMO.#: OMO-IRFU3910PBF-INFINEON-TECHNOLOGIES

      MOSFET N-CH 100V 16A I-PAK
      IRFU3910PBF,IRFU3910,FU3

      Mfr.#: IRFU3910PBF,IRFU3910,FU3

      OMO.#: OMO-IRFU3910PBF-IRFU3910-FU3-1190

      New and Original
      Availability
      Stock:
      Available
      On Order:
      2500
      Enter Quantity:
      Current price of IRFU3806PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.69
      $0.69
      10
      $0.66
      $6.56
      100
      $0.62
      $62.10
      500
      $0.59
      $293.25
      1000
      $0.55
      $552.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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