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IPW60R280C6FKSA1

IPW60R280C6FKSA1
Mfr. #:
IPW60R280C6FKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 600V 13.8A TO247-3 CoolMOS C6
Lifecycle:
New from this manufacturer.
Datasheet:
IPW60R280C6FKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
13.8 A
Rds On - Drain-Source Resistance:
250 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
43 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
104 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Tube
Height:
21.1 mm
Length:
16.13 mm
Series:
CoolMOS C6
Transistor Type:
1 N-Channel
Width:
5.21 mm
Brand:
Infineon Technologies
Fall Time:
12 ns
Product Type:
MOSFET
Rise Time:
11 ns
Factory Pack Quantity:
240
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
100 ns
Typical Turn-On Delay Time:
13 ns
Part # Aliases:
IPW60R280C6 IPW6R28C6XK SP000645032
Unit Weight:
1.340411 oz
Tags
IPW60R280C, IPW60R28, IPW60R2, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 280 mOhm 43 nC CoolMOS™ Power Mosfet - TO-247-3
***ment14 APAC
MOSFET,N CH,600V,13.8A,TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:13.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:13.8A; Power Dissipation Pd:104W; Voltage Vgs Max:30V
***ineon
CoolMOS C6 combines 's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
Part # Mfg. Description Stock Price
IPW60R280C6FKSA1
DISTI # 32028636		Infineon Technologies AGTrans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 5000:$1.4256
  • 2500:$1.4850
  • 1000:$1.5642
  • 500:$1.8513
  • 250:$2.0592
  • 240:$2.1780
IPW60R280C6FKSA1
DISTI # IPW60R280C6FKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V 13.8A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		221In Stock
  • 5040:$1.5164
  • 2640:$1.5757
  • 720:$1.9666
  • 240:$2.3102
  • 25:$2.6656
  • 10:$2.8200
  • 1:$3.1400
IPW60R280C6FKSA1
DISTI # V36:1790_06377841		Infineon Technologies AGTrans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
  • 240000:$1.3140
  • 120000:$1.3170
  • 24000:$1.5720
  • 2400:$2.0240
  • 240:$2.1000
IPW60R280C6FKSA1032
DISTI # IPW60R280C6FKSA1032		Infineon Technologies AG- Bulk (Alt: IPW60R280C6FKSA1032)
Min Qty: 241
Container: Bulk		Americas - 0
  • 723:$1.2900
  • 1205:$1.2900
  • 2410:$1.2900
  • 241:$1.3900
  • 482:$1.3900
IPW60R280C6XK
DISTI # IPW60R280C6FKSA1		Infineon Technologies AGTrans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IPW60R280C6FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$1.4337
  • 1440:$1.4596
  • 960:$1.5104
  • 480:$1.5671
  • 240:$1.6258
IPW60R280C6FKSA1.
DISTI # 29AC7039		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:13.8A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.25ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:104W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 2400:$1.4400
  • 1440:$1.4600
  • 960:$1.5100
  • 480:$1.5700
  • 1:$1.6300
IPW60R280C6FKSA1
DISTI # 726-IPW60R280C6FKSA1		Infineon Technologies AGMOSFET N-Ch 600V 13.8A TO247-3 CoolMOS C6
RoHS: Compliant		143
  • 1:$2.9800
  • 10:$2.5300
  • 100:$2.2000
  • 250:$2.0800
  • 500:$1.8700
  • 1000:$1.5800
  • 2500:$1.5000
  • 5000:$1.4400
IPW60R280C6
DISTI # 726-IPW60R280C6		Infineon Technologies AGMOSFET N-Ch 600V 13.8A TO247-3 CoolMOS C6
RoHS: Compliant		46
  • 1:$2.9800
  • 10:$2.5300
  • 100:$2.2000
  • 250:$2.0800
  • 500:$1.8700
IPW60R280C6FKSA1Infineon Technologies AGPower Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247
RoHS: Compliant		5580
  • 1000:$1.3600
  • 500:$1.4300
  • 100:$1.4900
  • 25:$1.5500
  • 1:$1.6700
IPW60R280C6FKSA1032Infineon Technologies AGInfineon CoolMOS™ N-Channel Power MOSFETIPW60R280C6 - TO247
RoHS: Not Compliant		240
  • 1000:$1.3700
  • 500:$1.4400
  • 100:$1.5000
  • 25:$1.5600
  • 1:$1.6800
IPW60R280C6FKSA1Infineon Technologies AG 148
    IPW60R280C6FKSA1
    DISTI # IPW60R280C6    		Infineon Technologies AGN-Ch 600V 13,8A 104W 0,28R TO247
    RoHS: Compliant    		205
    • 1:€5.7500
    • 10:€2.7500
    • 50:€1.2500
    • 100:€1.2000
    IPW60R280C6FKSA1
    DISTI # 1860833    		Infineon Technologies AGMOSFET,N CH,600V,13.8A,TO247
    RoHS: Compliant    		0
    • 500:$2.8800
    • 250:$3.2000
    • 100:$3.3900
    • 10:$3.8900
    • 1:$4.5800
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    Availability
    Stock:
    143
    On Order:
    2126
    Enter Quantity:
    Current price of IPW60R280C6FKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.98
    $2.98
    10
    $2.53
    $25.30
    100
    $2.20
    $220.00
    250
    $2.08
    $520.00
    500
    $1.87
    $935.00
    1000
    $1.58
    $1 580.00
    2500
    $1.50
    $3 750.00
    5000
    $1.44
    $7 200.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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