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BSC265N10LSFGATMA1

BSC265N10LSFGATMA1
Mfr. #:
BSC265N10LSFGATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
Lifecycle:
New from this manufacturer.
Datasheet:
BSC265N10LSFGATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
40 A
Rds On - Drain-Source Resistance:
20 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
21 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
78 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Series:
OptiMOS 2
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
21 S
Fall Time:
4 ns
Product Type:
MOSFET
Rise Time:
24 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
20 ns
Typical Turn-On Delay Time:
10 ns
Part # Aliases:
BSC265N10LSF BSC265N1LSFGXT G SP000379618
Unit Weight:
0.004258 oz
Tags
BSC265N10LSFG, BSC265N1, BSC26, BSC2, BSC
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 26.5 mOhm 16 nC OptiMOS™ Power Mosfet - TDSON-8
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 40A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; Current Id Max:40A; Power Dissipation Pd:78W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Part # Mfg. Description Stock Price
BSC265N10LSFGATMA1
DISTI # V72:2272_06384479		Infineon Technologies AGTrans MOSFET N-CH 100V 6.5A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		3543
  • 3000:$0.4266
  • 1000:$0.4740
  • 500:$0.6221
  • 250:$0.6762
  • 100:$0.7038
  • 25:$0.8207
  • 10:$1.0030
  • 1:$1.1718
BSC265N10LSFGATMA1
DISTI # V36:1790_06384479		Infineon Technologies AGTrans MOSFET N-CH 100V 6.5A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		0
    BSC265N10LSFGATMA1
    DISTI # BSC265N10LSFGATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 100V 40A TDSON-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		728In Stock
    • 1000:$0.5342
    • 500:$0.6767
    • 100:$0.8191
    • 10:$1.0510
    • 1:$1.1800
    BSC265N10LSFGATMA1
    DISTI # BSC265N10LSFGATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 100V 40A TDSON-8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		728In Stock
    • 1000:$0.5342
    • 500:$0.6767
    • 100:$0.8191
    • 10:$1.0510
    • 1:$1.1800
    BSC265N10LSFGATMA1
    DISTI # BSC265N10LSFGATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 100V 40A TDSON-8
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape & Reel (TR)    		On Order
    • 10000:$0.4426
    • 5000:$0.4599
    BSC265N10LSFGATMA1
    DISTI # 32906230    		Infineon Technologies AGTrans MOSFET N-CH 100V 6.5A Automotive 8-Pin TDSON EP T/R
    RoHS: Compliant    		3543
    • 3000:$0.4266
    • 1000:$0.4740
    • 500:$0.6221
    • 250:$0.6762
    • 100:$0.7038
    • 25:$0.8207
    • 19:$1.0030
    BSC265N10LSFGATMA1
    DISTI # BSC265N10LSFGATMA1    		Infineon Technologies AGTrans MOSFET N-CH 100V 6.5A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC265N10LSFGATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 50000:$0.3339
    • 30000:$0.3399
    • 20000:$0.3519
    • 10000:$0.3649
    • 5000:$0.3789
    BSC265N10LSFGATMA1
    DISTI # SP000379618    		Infineon Technologies AGTrans MOSFET N-CH 100V 6.5A 8-Pin TDSON EP T/R (Alt: SP000379618)
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape and Reel    		Europe - 0
    • 50000:€0.3329
    • 30000:€0.3589
    • 20000:€0.3889
    • 10000:€0.4239
    • 5000:€0.5189
    BSC265N10LSFGATMA1
    DISTI # 97Y1251    		Infineon Technologies AGMOSFET, N-CH, 100V, 40A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.85V,Power RoHS Compliant: Yes0
    • 1000:$0.4990
    • 500:$0.6320
    • 250:$0.6740
    • 100:$0.7160
    • 50:$0.7880
    • 25:$0.8600
    • 10:$0.9310
    • 1:$1.0900
    BSC265N10LSF G
    DISTI # 726-BSC265N10LSFG    		Infineon Technologies AGMOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
    RoHS: Compliant    		3305
    • 1:$1.0800
    • 10:$0.9220
    • 100:$0.7090
    • 500:$0.6260
    • 1000:$0.4940
    BSC265N10LSFGATMA1
    DISTI # 726-BSC265N10LSFGATM    		Infineon Technologies AGMOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
    RoHS: Compliant    		1946
    • 1:$1.0800
    • 10:$0.9220
    • 100:$0.7090
    • 500:$0.6260
    • 1000:$0.4940
    BSC265N10LSFGATMA1
    DISTI # 1107109P    		Infineon Technologies AGMOSFET N-CHANNEL 100V 40A OPTIMOS TDSON8, RL5480
    • 1000:£0.3530
    • 400:£0.4290
    • 200:£0.5050
    • 40:£0.5810
    BSC265N10LSFGATMA1
    DISTI # BSC265N10LSFGATMA1    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,40A,78W,PG-TDSON-83377
    • 1000:$0.4415
    • 100:$0.4899
    • 10:$0.5586
    • 3:$0.6652
    • 1:$0.7511
    BSC265N10LSFGATMA1
    DISTI # 2617473    		Infineon Technologies AGMOSFET, N-CH, 100V, 40A, PG-TDSON-89575
    • 500:£0.4830
    • 250:£0.5150
    • 100:£0.5460
    • 10:£0.7670
    • 1:£0.9500
    BSC265N10LSFGATMA1
    DISTI # 2617473    		Infineon Technologies AGMOSFET, N-CH, 100V, 40A, PG-TDSON-8
    RoHS: Compliant    		4245
    • 1000:$0.8550
    • 500:$1.1000
    • 100:$1.4000
    • 10:$1.7800
    • 1:$2.0000
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    OMO.#: OMO-CX3225SB20000D0FPLCC-AVX

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    OMO.#: OMO-1N4148WT-ON-SEMICONDUCTOR

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    OMO.#: OMO-172065-1012-410

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    Availability
    Stock:
    Available
    On Order:
    1984
    Enter Quantity:
    Current price of BSC265N10LSFGATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.08
    $1.08
    10
    $0.92
    $9.22
    100
    $0.71
    $70.90
    500
    $0.63
    $313.00
    1000
    $0.49
    $494.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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