IKW30N60H3FKSA1

Mfr. #:: IKW30N60H3FKSA1
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors 600V 30A 187W
Lifecycle:: New from this manufacturer.
Datasheet:: IKW30N60H3FKSA1 Datasheet
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More Information:: IKW30N60H3FKSA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 1.95 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 60 A

Pd - Power Dissipation:: 187 W

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 175 C

Series:: HighSpeed 3

Packaging:: Tube

Height:: 20.7 mm

Length:: 15.87 mm

Width:: 5.31 mm

Brand:: Infineon Technologies

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 240

Subcategory:: IGBTs

Tradename:: TRENCHSTOP

Part # Aliases:: IKW30N60H3 IKW3N6H3XK SP000703042

Unit Weight:: 0.191185 oz

Tags: IKW30N60H, IKW30N60, IKW30N6, IKW30N, IKW3, IKW

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

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IKW30N60H3FKSA1 Description

***ow.cn: Trans IGBT Chip N-CH 600V 60A 187000mW Automotive 3-Pin(3+Tab) TO-247 Tube

***ineon SCT: 600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

***ment14 APAC: IGBT+ DIODE,600V,20A,TO247; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:187W

***trelec: Configuration = Single / Continuous Collector Current (Ic) A = 30 / Collector-Emitter Voltage (Vceo) V = 600 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.95 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 187 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260

***ineon: Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications

***ical: Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube

*** Electronics: STMICROELECTRONICS STGW20NC60VD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247

***ser: IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 30 Amp

***(Formerly Allied Electronics): Transistor IGBT N-Ch 600V 60A TO247

***nell: IGBT, 600V, 20A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O

*** Services: CoC and 2-years warranty / RFQ for pricing

***S: French Electronic Distributor since 1988

***ical: Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube

***el Electronic: STMICROELECTRONICS STGW30NC60WD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC

***ser: IGBTs Insulated Gate Bipolar Transistor PowerMESH" IGBT

***nell: IGBT, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Te

***(Formerly Allied Electronics): STGW30NC60WD,IGBT Ultrafast 600V 30A

*** Electronic Components: IGBT Transistors PowerMESH" IGBT

***ical: Trans IGBT Chip N-CH 600V 120A 298000mW 3-Pin(3+Tab) TO-247AB Rail

***ure Electronics: FGH60N60UFD Series 600 V 120 A Flange Mount Field Stop IGBT - TO-247

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.

***nell: IGBT,N CH,FAST,W/DIO,600V,120A,TO247; Transistor Type:IGBT; DC Collector Current:120A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:298W

***ical: Trans IGBT Chip N=-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-247 Rail

***eco: 600V SMPS Series N-Channel IGBT Transistor with Anti-Parallel Hyperfast Diode

***ure Electronics: HGTG12N60A4D Series 600 V 54 A Flange Mount SMPS N-Channel IGBT-TO-247

***rchild Semiconductor: The HGTG12N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.

***ment14 APAC: IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:54A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:167W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:54A; Current Temperature:25°C; Device Marking:HGTG12N60A4D; Fall Time tf:95ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:167W; Power Dissipation Pd:167W; Power Dissipation Pd:167W; Pulsed Current Icm:96A; Rise Time:16ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***icroelectronics: Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

***ical: Trans IGBT Chip N-CH 600V 60A 181000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: V Series 600 V 60 A Through Hole Silicon IGBT - TO-247-3

***nell: IGBT, SINGLE, 600V, 60A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins

***ical: Trans IGBT Chip N=-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Rail

***ource: 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode60A, 600V, UFS N

***nell: IGBT,N CH,600V,30A,TO-247.; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 208W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins

***rchild Semiconductor: The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49172.

IKW30N60H3FKSA1 More Information

Home Appliance Solutions: Infineon Home Appliance Solutions offer a range of products for low power drive in-home appliance applications. These devices meet and exceed the most rigorous requirements for reliability, quality, security and energy efficiency. Included in this portfolio are RC-Drives IGBTs, fast IGBTs, discrete IGBTs, rapid diodes, gate driver ICs, microcontrollers: XMC™ and iMotion™, IPM: CIPOS™ and IRAM.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IKW30N60H3FKSA1 DISTI # V99:2348_06377961	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 60A 187000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	240	1200:$2.4490 720:$2.8160 240:$2.9040 10:$3.2580 1:$3.7130
IKW30N60H3FKSA1 DISTI # IKW30N60H3FKSA1-ND	Infineon Technologies AG	IGBT 600V 60A 187W TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	1178In Stock	1200:$2.6922 720:$3.1349 240:$3.6288 10:$4.3610 1:$4.8200
IKW30N60H3FKSA1 DISTI # 31073928	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 60A 187000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	1385	100:$3.0432 10:$3.5040
IKW30N60H3FKSA1 DISTI # 28976507	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 60A 187000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	240	240:$2.9040 10:$3.2580 3:$3.7130
IKW30N60H3FKSA1 DISTI # IKW30N60H3FKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 60A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW30N60H3FKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	240:$2.2900 480:$2.1900 960:$2.0900 1440:$1.9900 2400:$1.9900
IKW30N60H3FKSA1 DISTI # 13T9448	Infineon Technologies AG	IGBT+ DIODE,600V,20A,TO247,DC Collector Current:30A,Collector Emitter Saturation Voltage Vce(on):2.4V,Power Dissipation Pd:187W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:175°C,MSL:- RoHS Compliant: Yes	1085	1:$4.3000 10:$3.6500 25:$3.4900 50:$3.3300 100:$3.1700
IKW30N60H3FKSA1 DISTI # 726-IKW30N60H3FKSA1	Infineon Technologies AG	IGBT Transistors 600V 30A 187W RoHS: Compliant	410	1:$4.3000 10:$3.6500 100:$3.1700
IKW30N60H3 DISTI # 726-IKW30N60H3	Infineon Technologies AG	IGBT Transistors 600V 30A 187W RoHS: Compliant	32	1:$4.3000 10:$3.6500 100:$3.1700
IKW30N60H3FKSA1 DISTI # 1107756P	Infineon Technologies AG	IGBT TRENCHSTOP N-CHANNEL 600V 30A TO247, TU	170	20:£2.6180 100:£2.2730 200:£2.1430 500:£2.1000
IKW30N60H3FKSA1 DISTI # 1107756	Infineon Technologies AG	IGBT TRENCHSTOP N-CHANNEL 600V 30A TO247, PK	256	4:£3.2980 20:£2.6180 100:£2.2730 200:£2.1430 500:£2.1000
IKW30N60H3FKSA1 DISTI # IKW30N60H3	Infineon Technologies AG	Transistor: IGBT,600V,30A,94W,TO247-3,Series: H3	8	1:$4.2600 5:$3.6700 30:$2.9500 120:$2.6400
IKW30N60H3FKSA1 DISTI # C1S322000514690	Infineon Technologies AG	IGBT Chip RoHS: Compliant	240	100:$2.8689 10:$3.2510 1:$3.7410
IKW30N60H3FKSA1 DISTI # 1832342	Infineon Technologies AG	IGBT+ DIODE,600V,20A,TO247 RoHS: Compliant	1045	1:£2.9400 10:£2.3500 100:£1.9200 250:£1.7800 500:£1.6300
IKW30N60H3FKSA1 DISTI # 1832342	Infineon Technologies AG	IGBT+ DIODE,600V,20A,TO247 RoHS: Compliant	1045	1:$6.8100 10:$5.7800 100:$5.0200

Image	Part #	Description
	Mfr.#: IR4427SPBF OMO.#: OMO-IR4427SPBF	Gate Drivers DUAL HI SIDE DRVR 6V to 20V 1.5A 85ns
	Mfr.#: IX4427N OMO.#: OMO-IX4427N	Gate Drivers DUAL NON INVERT DRVR 8P SOIC Input CMOS
	Mfr.#: ADN4662BRZ OMO.#: OMO-ADN4662BRZ	LVDS Interface IC SGL 3V CMOS Diff Line Receiver
	Mfr.#: C2M0080120D OMO.#: OMO-C2M0080120D	MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT
	Mfr.#: C247-075-3AE OMO.#: OMO-C247-075-3AE	Heat Sinks HEATSINK FOR TO-247 3 CLIPS, RADIAL
	Mfr.#: CS-DSDMDB09MF-010 OMO.#: OMO-CS-DSDMDB09MF-010	D-Sub Cables DELUXE DB9 M/F MOLDED 10'
	Mfr.#: IX4427N OMO.#: OMO-IX4427N-IXYS-INTEGRATED-CIRCUITS-DIVIS	Gate Drivers DUAL NON INVERT DRVR 8P SOIC Input CMOS
	Mfr.#: IR4427SPBF OMO.#: OMO-IR4427SPBF-INFINEON-TECHNOLOGIES	Gate Drivers DUAL HI SIDE DRVR 6V to 20V 1.5A 85ns
	Mfr.#: C2M0080120D OMO.#: OMO-C2M0080120D-WOLFSPEED	MOSFET N-CH 1200V 31.6A TO247
	Mfr.#: ADN4662BRZ OMO.#: OMO-ADN4662BRZ-ANALOG-DEVICES-INC-ADI	LVDS Interface IC SGL 3V CMOS Diff Line Receive

IKW30N60H3FKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes