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IRLU8203PBF

IRLU8203PBF
Mfr. #:
IRLU8203PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 30V 1 N-CH HEXFET PWR MOSFET 6.8mOhms
Lifecycle:
New from this manufacturer.
Datasheet:
IRLU8203PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLU8203PBF DatasheetIRLU8203PBF Datasheet (P4-P6)IRLU8203PBF Datasheet (P7-P9)IRLU8203PBF Datasheet (P10-P11)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-251-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
110 A
Rds On - Drain-Source Resistance:
9 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
33 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
140 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
6.22 mm
Length:
6.73 mm
Transistor Type:
1 N-Channel
Type:
Smps MOSFET
Width:
2.38 mm
Brand:
Infineon / IR
Fall Time:
69 ns
Product Type:
MOSFET
Rise Time:
99 ns
Factory Pack Quantity:
6525
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
30 ns
Typical Turn-On Delay Time:
15 ns
Unit Weight:
0.139332 oz
Tags
IRLU82, IRLU8, IRLU, IRL
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, 30V, 110A, 6.8 MOHM, 33 NC QG, LOGIC LEVEL, I-PAK
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
***et Europe
Trans MOSFET N-CH 30V 110A 3-Pin(3+Tab) IPAK
***
N-Channel 3 V 11A (Tc) 14W (Tc) Through Hole I-PAK
***ment14 APAC
MOSFET, N, 30V, 110A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.8mohm; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:140W; Transistor Case Style:I-PAK; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Junction to Case Thermal Resistance A:1.09°C/W; On State resistance @ Vgs = 10V:6.8mohm; Package / Case:IPAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:120A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
Part # Mfg. Description Stock Price
IRLU8203PBF
DISTI # IRLU8203PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 110A I-PAK
RoHS: Compliant
Min Qty: 6525
Container: Tube		Limited Supply - Call
    IRLU8203PBF
    DISTI # 70018581    		Infineon Technologies AGMOSFET,30V,110A,6.8 MOHM,33 NC QG,LOGIC LEVEL,I-PAK
    RoHS: Compliant    		0
    • 6525:$0.6600
    IRLU8203PBF
    DISTI # 8660344    		Infineon Technologies AGMOSFET, N, 30V, 110A, I-PAK
    RoHS: Compliant    		0
    • 1000:$1.1800
    • 500:$1.2700
    • 250:$1.4300
    • 100:$1.6000
    • 10:$1.9800
    • 1:$2.4000
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    Availability
    Stock:
    Available
    On Order:
    2000
    Enter Quantity:
    Current price of IRLU8203PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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