NVHL080N120SC1

Mfr. #:: NVHL080N120SC1
Manufacturer:: ON Semiconductor
Description:: MOSFET SIC MOS 80MW 120
Lifecycle:: New from this manufacturer.
Datasheet:: NVHL080N120SC1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: NVHL080N120SC1 more Information

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-247-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 1200 V

Id - Continuous Drain Current:: 44 A

Rds On - Drain-Source Resistance:: 162 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.8 V

Vgs - Gate-Source Voltage:: - 15 V, 25 V

Qg - Gate Charge:: 56 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 348 W

Configuration:: Single

Channel Mode:: Enhancement

Qualification:: AEC-Q101

Packaging:: Tube

Transistor Type:: 1 N-Channel

Brand:: ON Semiconductor

Forward Transconductance - Min:: 13 S

Fall Time:: 8 ns

Product Type:: MOSFET

Rise Time:: 5.8 ns

Factory Pack Quantity:: 450

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 28 ns

Typical Turn-On Delay Time:: 6.2 ns

Tags: NVHL0, NVHL, NVH

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NVHL080N120SC1 More Information

Wide Bandgap SiC Devices: ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

NxHL080N120SC1 N-Channel SiC MOSFETs: ON Semiconductor NxHL080N120SC1 N-Channel SiC MOSFETs are 1200V, 80mΩ MOSFETs that provide superior switching performance and high reliability. These MOSFETs offer low ON resistance and come in compact chip size that ensures low capacitance and low gate charge. The NxHL080N120SC1 MOSFETs feature high efficiency, fast operation frequency, high-speed switching, increased power density, reduced EMI, and reduced system size. These MOSFETs come in TO247-3L package. The NVHL080N120SC1 MOSFET is qualified for automotive grade according to AEC-Q101 certification.

Market price

Part #	Mfg.	Description	Stock	Price
NVHL080N120SC1 DISTI # V36:1790_23149798	ON Semiconductor	Trans MOSFET N-CH SiC 1.2KV 44A Automotive Tube	0	450000:$8.6050 225000:$8.6120 45000:$9.8770 4500:$12.7200 450:$13.2300
NVHL080N120SC1 DISTI # V99:2348_23149798	ON Semiconductor	Trans MOSFET N-CH SiC 1.2KV 44A Automotive Tube	0	450000:$8.9110 225000:$8.9170 45000:$10.1000 4500:$12.7500 450:$13.2300
NVHL080N120SC1 DISTI # NVHL080N120SC1OS-ND	ON Semiconductor	SIC MOS TO247-3L 80MW 120 RoHS: Compliant Min Qty: 1 Container: Tube	212In Stock	900:$10.8098 450:$11.5552 25:$13.7916 10:$14.3880 1:$15.6600
NVHL080N120SC1 DISTI # NVHL080N120SC1	ON Semiconductor	Silicon Carbide MOSFET N‐Channel 1200V 80mOhm 20A 3-Pin TO-247 Tube (Alt: NVHL080N120SC1) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€8.9900 500:€9.0900 100:€9.2900 50:€9.4900 25:€9.9900 10:€10.2900 1:€12.7900
NVHL080N120SC1 DISTI # NVHL080N120SC1	ON Semiconductor	Silicon Carbide MOSFET N‐Channel 1200V 80mOhm 20A 3-Pin TO-247 Tube - Rail/Tube (Alt: NVHL080N120SC1) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	4500:$8.6900 2700:$8.8900 1800:$9.0900 450:$9.1900 900:$9.1900
NVHL080N120SC1 DISTI # 99AC9420	ON Semiconductor	MOSFET, AEC-Q101, N-CH, 1.2KV, TO-247 ROHS COMPLIANT: YES	441	500:$10.3900 250:$11.1100 100:$11.6900 50:$12.4700 25:$13.2600 10:$13.8400 1:$15.0500
NVHL080N120SC1 DISTI # 863-NVHL080N120SC1	ON Semiconductor	MOSFET SIC MOS 80MW 120 RoHS: Compliant	445	1:$14.9000 10:$13.7000 25:$13.1300 100:$11.5700 250:$11.0000 500:$10.2900
NVHL080N120SC1 DISTI # 3018978	ON Semiconductor	MOSFET, AEC-Q101, N-CH, 1.2KV, TO-247	405	100:£11.4300 50:£11.6700 10:£11.9100 5:£13.0500 1:£13.2300
NVHL080N120SC1 DISTI # 3018978	ON Semiconductor	MOSFET, AEC-Q101, N-CH, 1.2KV, TO-247 RoHS: Compliant	435	250:$13.4200 100:$15.0700 50:$15.9500 10:$16.8300 5:$18.9600 1:$19.5500

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Availability

Stock:: 423
On Order:: 2406
Enter Quantity:

Current price of NVHL080N120SC1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$14.90~~; ~~$14.90~~

10: ~~$13.70~~; ~~$137.00~~

25: ~~$13.13~~; ~~$328.25~~

100: ~~$11.57~~; ~~$1 157.00~~

250: ~~$11.00~~; ~~$2 750.00~~

500: ~~$10.29~~; ~~$5 145.00~~

1000: ~~$9.44~~; ~~$9 440.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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NVHL080N120SC1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes