BUP213

BUP213
Mfr. #:
BUP213
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors IGBT CHIP NPT TECH 1200V 15A
Lifecycle:
New from this manufacturer.
Datasheet:
BUP213 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BUP213 DatasheetBUP213 Datasheet (P4-P6)BUP213 Datasheet (P7-P8)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-220-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1200 V
Maximum Gate Emitter Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Packaging:
Tube
Continuous Collector Current Ic Max:
32 A
Height:
9.25 mm
Length:
10 mm
Width:
4.4 mm
Brand:
Infineon Technologies
Product Type:
IGBT Transistors
Factory Pack Quantity:
500
Subcategory:
IGBTs
Unit Weight:
0.211644 oz
Tags
BUP21, BUP2, BUP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
***ark
; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:32A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:200W; Package/Case:TO-220AB ;RoHS Compliant: Yes
***nell
IGBT, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:1200V; Current Ic Continuous a Max:32A; Voltage, Vce Sat Max:2.7V; Power Dissipation:200W; Case Style:TO-220AB; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Collector-to-Emitter Breakdown Voltage:1200V; Current, Icm Pulsed:64A; Device Marking:BUP213; No. of Pins:3; Pin Format:GCE; Power, Pd:200W; Power, Ptot:200W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:95ns; Time, Rise:70ns; Transistors, No. of:1
Part # Mfg. Description Stock Price
BUP213
DISTI # BUP213IN-ND
Infineon Technologies AGIGBT 1200V 32A 200W TO220
RoHS: Not compliant
Min Qty: 500
Container: Tube
Limited Supply - Call
    BUP213
    DISTI # 726-BUP213
    Infineon Technologies AGIGBT Transistors IGBT CHIP NPT TECH 1200V 15A
    RoHS: Compliant
    0
      BUP213 E3045A
      DISTI # 726-BUP213E3045A
      Infineon Technologies AGIGBT Transistors IGBT CHIP NPT TECH 1200V 15A
      RoHS: Compliant
      0
        BUP213Infineon Technologies AGInsulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
        RoHS: Not Compliant
        1634
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          Availability
          Stock:
          Available
          On Order:
          5000
          Enter Quantity:
          Current price of BUP213 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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