IPP030N10N3GXKSA1

IPP030N10N3GXKSA1
Mfr. #:
IPP030N10N3GXKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 100V 100A TO220-3
Lifecycle:
New from this manufacturer.
Datasheet:
IPP030N10N3GXKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
100 A
Rds On - Drain-Source Resistance:
3 mOhms
Configuration:
Single
Tradename:
OptiMOS
Packaging:
Tube
Height:
15.65 mm
Length:
10 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
4.4 mm
Brand:
Infineon Technologies
Product Type:
MOSFET
Factory Pack Quantity:
500
Subcategory:
MOSFETs
Part # Aliases:
G IPP030N10N3 IPP3N1N3GXK SP000680768
Unit Weight:
0.211644 oz
Tags
IPP030N10N3G, IPP030N10N3, IPP030N10N, IPP030, IPP03, IPP0, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop
Trans MOSFET N-CH 100V 100A Automotive 3-Pin(3+Tab) TO-220 Tube
***ure Electronics
Single N-Channel 100 V 3 mOhm 155 nC OptiMOS™ Power Mosfet - TO-220-3
***ark
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:100A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.7V; Power Dissipation:300W; No. of Pins:3Pins RoHS Compliant: Yes
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO220-3, RoHS
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 100 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 3 / Gate-Source Voltage V = 20 / Fall Time ns = 28 / Rise Time ns = 58 / Turn-OFF Delay Time ns = 84 / Turn-ON Delay Time ns = 34 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 300
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ineon SCT
Trans MOSFET N-CH 100V 120A Automotive 3-Pin(3+Tab) TO-220 Tube, PG-TO220-3, RoHS
***ure Electronics
Single N-Channel 100 V 2.3 mOhm 168 nC OptiMOS™ Power Mosfet - TO-220-3
***nell
MOSFET, N-CH, 100V, 120A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.002ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;
***ineon
OptiMOS 5 100V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 100V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 43% from previous generation | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
***ure Electronics
Single N-Channel 80 V 2.8 mOhm 155 nC OptiMOS™ Power Mosfet - TO-220-3
***ow.cn
Trans MOSFET N-CH 80V 100A Automotive 3-Pin(3+Tab) TO-220 Tube
***ponent Stockers USA
100 A 80 V 0.0028 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***ment14 APAC
MOSFET, N CH, 100A, 80V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:100A; Power Dissipation Pd:300W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
***icroelectronics
N-channel 75 V, 3 mOhm, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 120A I(D), 75V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 75V, 120A, TO 220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.003ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 300W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C
***ineon SCT
Trans MOSFET N-CH 80V 120A Automotive 3-Pin(3+Tab) TO-220 Tube, PG-TO220-3, RoHS
***ark
Mosfet, N-Ch, 80V, 120A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.002Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
Part # Mfg. Description Stock Price
IPP030N10N3GXKSA1
DISTI # IPP030N10N3GXKSA1-ND
Infineon Technologies AGMOSFET N-CH 100V 100A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 1000:$3.1317
  • 500:$3.7134
  • 100:$4.5858
  • 10:$5.5920
  • 1:$6.2600
IPP030N10N3GXKSA1
DISTI # IPP030N10N3GXKSA1
Infineon Technologies AGTrans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: IPP030N10N3GXKSA1)
RoHS: Compliant
Min Qty: 1
Container: Tube
Americas - 0
  • 1:$2.8900
  • 10:$2.8900
  • 25:$2.7900
  • 50:$2.7900
  • 100:$2.6900
  • 500:$2.5900
  • 1000:$2.4900
IPP030N10N3GXKSA1.
DISTI # 27AC6743
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power Dissipation Pd:300W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 1:$5.3900
  • 10:$4.5800
  • 25:$4.3800
  • 50:$4.1700
  • 100:$3.9700
  • 250:$3.7700
  • 500:$3.3800
IPP030N10N3GXKSA1
DISTI # 726-IPP030N10N3GXKSA
Infineon Technologies AGMOSFET N-Ch 100V 100A TO220-3
RoHS: Compliant
0
  • 1:$5.3900
  • 10:$4.5800
  • 100:$3.9700
  • 250:$3.7700
  • 500:$3.3800
IPP030N10N3GXKSA1Infineon Technologies AGPower Field-Effect Transistor, 100A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
5
  • 1000:$2.4600
  • 500:$2.5900
  • 100:$2.7000
  • 25:$2.8100
  • 1:$3.0300
IPP030N10N3GXKSA1
DISTI # 1109089P
Infineon Technologies AGMOSFET N-CHAN OPTIMOS-3 100V 100A TO220, TU262
  • 20:£2.8800
  • 100:£2.3630
  • 200:£2.2550
  • 500:£2.1450
IPP030N10N3GXKSA1
DISTI # 2443403
Infineon Technologies AGMOSFET, N CH, 100V, 100A, TO-220-3
RoHS: Compliant
0
  • 1:£3.8700
  • 10:£2.9100
  • 100:£2.2800
  • 250:£2.2300
  • 500:£2.1700
IPP030N10N3GXKSA1
DISTI # 2443403
Infineon Technologies AGMOSFET, N CH, 100V, 100A, TO-220-3
RoHS: Compliant
0
  • 1:$6.0300
  • 10:$5.6300
  • 100:$4.9800
  • 500:$4.7100
  • 1000:$4.4700
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Mfr.#: WSL1206R0200FEA

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Mfr.#: LM723H/NOPB

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Mfr.#: DP-190-GRAY

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Availability
Stock:
Available
On Order:
4000
Enter Quantity:
Current price of IPP030N10N3GXKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$5.38
$5.38
10
$4.57
$45.70
100
$3.96
$396.00
250
$3.76
$940.00
500
$3.37
$1 685.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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