2SC5354-1(F)

Mfr. #:: 2SC5354-1(F)
Manufacturer:: Toshiba
Description:: Bipolar Transistors - BJT Transistor NPN 800V 5A
Lifecycle:: New from this manufacturer.
Datasheet:: 2SC5354-1(F) Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Toshiba

Product Category:: Bipolar Transistors - BJT

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-3P-N-3

Transistor Polarity:: NPN

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 800 V

Collector- Base Voltage VCBO:: 900 V

Emitter- Base Voltage VEBO:: 7 V

Collector-Emitter Saturation Voltage:: 1 V

Maximum DC Collector Current:: 5 A

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Series:: 2SC5354

DC Current Gain hFE Max:: 60

Brand:: Toshiba

Continuous Collector Current:: 5 A

DC Collector/Base Gain hfe Min:: 15

Pd - Power Dissipation:: 100 W

Product Type:: BJTs - Bipolar Transistors

Factory Pack Quantity:: 50

Subcategory:: Transistors

Unit Weight:: 0.194007 oz

Tags: 2SC535, 2SC53, 2SC5, 2SC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SC5354-1(F) Description

***ical: Trans GP BJT NPN 800V 5A 100000mW 3-Pin(3+Tab) TO-3PN Sack

*** Americas: Power transistor for high-speed switching applications

***p One Stop Global: SILICON NPN TRIPLE DIFFUSED TYPE

***ical: Trans GP BJT NPN 800V 5A 40000mW 3-Pin(3+Tab) TO-220F Rail

***emi: 5.0 A, 800 V ESBC Rated NPN Power Bipolar Junction Transistor

***r Electronics: Power Bipolar Transistor, 5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

*** Electronic Components: Bipolar Transistors - BJT NPN ESBC/5A/800V TO-220F

***enic: 800V 40W 5A 20@200mA5V 15MHz NPN 159mV@1.5A300mA -55¡Í~+125¡Í@(Tj) TO-220F Bipolar Transistors - BJT ROHS

***rchild Semiconductor: The FJPF2145 is a low-cost, high-performance power switch designed to provide the best performance whenused in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignitionswitches. The power switch is designed to operate up to 1100 volts and up to 5 amps, while providing exceptionally low on-resistance and very low switching losses. The ESBC™ switch can be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance. The FJPF2145 provides exceptional reliability and a large operating range due to its square reverse-bias-safe-operating-area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures. The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in a highvoltage TO-220F package.

***r Electronics: Power Bipolar Transistor, 5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

*** Electronic Components: Bipolar Transistors - BJT NPN ESBC/8A/800V TO-220

***ow.cn: Trans GP BJT NPN 800V 5A 120000mW 3-Pin(3+Tab) TO-220 Tube

***rchild Semiconductor: The FJP2145 is a low-cost, high-performance power switch designed to provide the best performance when used in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1100 volts and up to 5 amps, while providing exceptionally low on-resistance and very low switching losses. The ESBC™ switch can be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance. The FJP2145 provides exceptional reliability and a large operating range due to its square reverse-bias-safe-operating-area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures. The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in a highvoltage TO-220 package.

***hard Electronics: Bipolar Transistors - BJT NPN Silicon Transistor

***i-Key: TRANS NPN 800V 6A TO-3PF

***ser: Power Transistors NPN Si Transistor Tripple Diff Planar

***i-Key: TRANS NPN 800V 20A TO-3PF

***Yang: Bipolar (BJT) Transistor NPN 600V 4A 11MHz 75W Through Hole TO-220-3 - Bulk

***ical: Trans GP BJT NPN 600V 4A 3-Pin(3+Tab) TO-220 Rail

***-Wing Technology: POWER BIPOLAR TRANSISTOR, NPN

***i-Key Marketplace: TRANS NPN 600V 4A TO220-3

***horized Procurement Solutions: OEMs, CMs ONLY (NO BROKERS)

***et: Bipolar (BJT) Transistor NPN 750V 6A 40W Through Hole TO-220F

***i-Key Marketplace: TRANS NPN 750V 6A TO220F-3

Market price

Part #	Mfg.	Description	Stock	Price
2SC5354-1(F) DISTI # 30603678	Toshiba America Electronic Components	SILICON NPN TRIPLE DIFFUSED TYPE	2944	800:$2.0528 100:$2.1803 50:$2.5500 10:$2.8560 8:$3.4552
2SC5354-1(F) DISTI # 2SC5354-1(F)	Toshiba America Electronic Components	MOSFET - Bulk (Alt: 2SC5354-1(F)) RoHS: Compliant Min Qty: 50 Container: Bulk	Americas - 0
2SC5354-1(F) DISTI # 757-2SC5354-1(F)	Toshiba America Electronic Components	Bipolar Transistors - BJT Transistor NPN 800V 5A RoHS: Compliant	79	1:$4.7700 10:$3.8300 100:$3.4900 250:$3.1500 500:$2.8300 1000:$2.3900 2500:$2.2700

Related products

Image	Part #	Description
	Mfr.#: BZX79C10 OMO.#: OMO-BZX79C10	Zener Diodes 10V 0.5W Zener
	Mfr.#: STP20NM50 OMO.#: OMO-STP20NM50	MOSFET N-Ch 500 Volt 20 Amp
	Mfr.#: NRVB120VLSFT1G OMO.#: OMO-NRVB120VLSFT1G	Schottky Diodes & Rectifiers AUTO STANDARD OF MBR
	Mfr.#: MPX224K305G OMO.#: OMO-MPX224K305G	Film Capacitors 0.22uF 305V
	Mfr.#: 223982-1 OMO.#: OMO-223982-1	Hard Metric Connectors M4x7-6G PWR MOD GDE
	Mfr.#: 860130575005 OMO.#: OMO-860130575005	Aluminum Electrolytic Capacitors - Radial Leaded WCAP-ATET 35V 220uF 20% ESR=382mOhms
	Mfr.#: MPX104K305E OMO.#: OMO-MPX104K305E-ILLINOIS-CAPACITOR	FILM CAPACITOR
	Mfr.#: LPF-60-24 OMO.#: OMO-LPF-60-24-MEAN-WELL	LED Power Supplies 60W 24V 2.5A LED PS W/PFC
	Mfr.#: 223982-1 OMO.#: OMO-223982-1-TE-CONNECTIVITY	Hard Metric Connectors M4x7-6G PWR MOD GDE
	Mfr.#: STP20NM50 OMO.#: OMO-STP20NM50-STMICROELECTRONICS	MOSFET N-CH 500V 20A TO-220

Availability

Stock:: 69
On Order:: 2052
Enter Quantity:

Current price of 2SC5354-1(F) is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$4.77~~; ~~$4.77~~

10: ~~$3.83~~; ~~$38.30~~

100: ~~$3.49~~; ~~$349.00~~

250: ~~$3.15~~; ~~$787.50~~

500: ~~$2.83~~; ~~$1 415.00~~

1000: ~~$2.39~~; ~~$2 390.00~~

2500: ~~$2.27~~; ~~$5 675.00~~

5000: ~~$2.18~~; ~~$10 900.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

2SC535 24
2SC53 226
2SC5 1341
2SC 6344

2SC5354-1(F)

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes