TGF2120

TGF2120
Mfr. #:
TGF2120
Manufacturer:
Qorvo
Description:
RF JFET Transistors DC-20GHz Gain 11dB 57% PAE@12GHz
Lifecycle:
New from this manufacturer.
Datasheet:
TGF2120 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TGF2120 more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
pHEMT
Technology:
GaAs
Gain:
11 dB
Vds - Drain-Source Breakdown Voltage:
8 V
Vgs - Gate-Source Breakdown Voltage:
- 12 V
Id - Continuous Drain Current:
194 mA
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
4.2 W
Package / Case:
Die
Packaging:
Gel Pack
Configuration:
Single
Operating Frequency:
20 GHz
Product:
RF JFET
Type:
GaAs pHEMT
Brand:
Qorvo
Forward Transconductance - Min:
464 mS
P1dB - Compression Point:
31 dBm
Product Type:
RF JFET Transistors
Factory Pack Quantity:
100
Subcategory:
Transistors
Part # Aliases:
1098613
Tags
TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
Transistor, DC- 20 GHz, 31 dBm, 11 dB, 8V, DIE
Triquint GaAs pHEMt Low Noise Amplifiers
TriQuint offers a wide variety of discrete transistor components using TriQuint's state-of-the-art ultra-low-noise 0.13µm pHEMT and 0.25µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NFmin as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.Learn More
TGF2120 GaAs pHEMT
Qorvo TGF2120 is a discrete 1200-Micron pHEMT which operates from DC to 20 GHz. Qorvo TGF2120 is designed using 0.25µm power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2120 typically provides 31 dBm of output power at P1dB with gain of 11dB and 57% power-added efficiency at 1dB compression. This performance makes the TGF2120 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.Learn More
Part # Mfg. Description Stock Price
TGF2120
DISTI # 772-TGF2120
QorvoRF JFET Transistors DC-20GHz Gain 11dB 57% PAE@12GHz
RoHS: Compliant
0
  • 100:$14.6000
  • 300:$13.6500
  • 500:$12.7500
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Availability
Stock:
Available
On Order:
2500
Enter Quantity:
Current price of TGF2120 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
100
$14.60
$1 460.00
300
$13.65
$4 095.00
500
$12.75
$6 375.00
1000
$11.92
$11 920.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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