H7N1004DL-E

Mfr. #:: H7N1004DL-E
Manufacturer:: Renesas Electronics Corporation
Description:
Lifecycle:: New from this manufacturer.
Datasheet:: H7N1004DL-E Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Tags: H7N1004D, H7N1004, H7N1, H7N

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Vacuum Packaging with PL

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H7N1004DL-E Description

***p One Stop Global: Trans MOSFET N-CH Si 100V 25A 3-Pin(3+Tab) DPAK(L)-(2) Tube

***egrated Device Technology: Nch Single Power Mosfet 100V 25A 35Mohm DPAK(L)-(2)/To-251

***el Nordic: Contact for details

***(Formerly Allied Electronics): NTD6414ANT4G N-channel MOSFET Transistor; 32 A; 100 V; 3-Pin DPAK

***emi: Single N-Channel Power MOSFET 100V, 32A, 37mΩ

***ure Electronics: NTD6414AN Series 100 V 37 mOhm Surface Mount N-Channel Power Mosfet - TO-252-3

***ark: Mosfet Transistor; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:32A; On Resistance Rds(On):0.03Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes

***nell: MOSFET,N CH,W DIODE,100V,32A,DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 32A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 100W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C

***emi: Power MOSFET 100V, 32A, 37 mohm, Single N-Channel, DPAK. Power MOSFET 100V 32A 37 mohm Single N-Channel DPAK

***et: Trans MOSFET N-CH 100V 32A 3-Pin(2+Tab) DPAK T/R

***ponent Stockers USA: 32 A 100 V 0.037 ohm N-CHANNEL Si POWER MOSFET

***r Electronics: Power Field-Effect Transistor, 32A I(D), 100V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***emi: Single N-Channel Power MOSFET 100V, 32A, 37mΩ

***p One Stop: Trans MOSFET N-CH 100V 32A 3-Pin(3+Tab) IPAK Rail

***ponent Stockers USA: 32 A 100 V 0.037 ohm N-CHANNEL Si POWER MOSFET

***r Electronics: Power Field-Effect Transistor, 32A I(D), 100V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***p One Stop Global: Trans MOSFET N-CH 100V 25A Automotive 3-Pin(2+Tab) DPAK T/R

***ure Electronics: Single N-Channel 100 V 100 W 55 nC Silicon Surface Mount Mosfet - TO-252-3

***ark: MOSFET, N-CH, 100V, 25A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:25A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***icroelectronics: N-Channel 100V - 0.033 Ohm - 25A - DPAK LOW GATE CHARGE StripFET(TM) POWER MOSFET

*** Source Electronics: MOSFET N-CH 100V 25A DPAK / Trans MOSFET N-CH 100V 25A 3-Pin(2+Tab) DPAK T/R

***va Crawler: N-channel 100 V, 0.033 Ohm typ., 25 A StripFET Power MOSFET in DPAK package

***ure Electronics: N-Channel 100 V 0.038 Ohm Surface Mount STripFET II Power MosFet - TO-252-3

***ark: MOSFET, N CHANNEL, 100V, 25A, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:12.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 25A I(D), 100V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N CH, 100V, 25A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 12.5A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 100W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 25A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

***ure Electronics: N-Channel 100 V 0.035 Ohm Surface Mount STripFET II Power MosFet - TO-252-3

***r Electronics: Power Field-Effect Transistor, 25A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:100V; Cont Current Id:25A; On State Resistance:0.03ohm; Voltage Vgs Rds on Measurement:10V; Case Style:DPAK; Termination Type:SMD; On State Resistance @ Vgs = 4.5V:0.04ohm; On State resistance @ Vgs = 10V:0.035ohm; Rds Measurement Voltage:10V; Transistor Case Style:D-PAK

Market price

Part #	Mfg.	Description	Stock	Price
H7N1004DSTR-E	Renesas Electronics Corporation		2585

Image	Part #	Description
	Mfr.#: H7N1002LM OMO.#: OMO-H7N1002LM-1190	New and Original
	Mfr.#: H7N1002LSTL-E OMO.#: OMO-H7N1002LSTL-E-RENESAS-ELECTRONICS-AMERICA	MOSFET N-CH 100V LDPAK
	Mfr.#: H7N1004DS OMO.#: OMO-H7N1004DS-1190	New and Original
	Mfr.#: H7N1004DSTL-E OMO.#: OMO-H7N1004DSTL-E-1190	New and Original
	Mfr.#: H7N1004FM OMO.#: OMO-H7N1004FM-1190	New and Original
	Mfr.#: H7N1004FN OMO.#: OMO-H7N1004FN-1190	New and Original
	Mfr.#: H7N1004FN-E OMO.#: OMO-H7N1004FN-E-1190	Power Field-Effect Transisto
	Mfr.#: H7N1005DS OMO.#: OMO-H7N1005DS-1190	New and Original
	Mfr.#: H7N1005LD OMO.#: OMO-H7N1005LD-1190	New and Original
	Mfr.#: H7N1005LS OMO.#: OMO-H7N1005LS-1190	New and Original

H7N1004DL-E

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes