TK33S10N1Z,LQ

Mfr. #:: TK33S10N1Z,LQ
Manufacturer:: Toshiba
Description:: MOSFET UMOSVIII 100V 10m max(VGS=10V) DPAK
Lifecycle:: New from this manufacturer.
Datasheet:: TK33S10N1Z,LQ Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: TK33S10N1Z,LQ Datasheet TK33S10N1Z,LQ Datasheet (P4-P6)TK33S10N1Z,LQ Datasheet (P7-P9)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Toshiba

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 33 A

Rds On - Drain-Source Resistance:: 9.7 mOhms

Vgs - Gate-Source Voltage:: 10 V

Configuration:: Single

Packaging:: Reel

Height:: 2.3 mm

Length:: 6.5 mm

Series:: TK33S10N1Z

Transistor Type:: 1 N-Channel

Width:: 5.5 mm

Brand:: Toshiba

Product Type:: MOSFET

Factory Pack Quantity:: 2000

Subcategory:: MOSFETs

Unit Weight:: 0.139332 oz

Tags: TK33S10N1Z, TK33S, TK33, TK3

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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TK33S10N1Z,LQ Description

***ark: X35 Pb-F Power Mosfet Transistor Dpak+ Moq=2000 Pd=35W F=1Mhz

***ical: Trans MOSFET N-CH Si 100V 33A Automotive 3-Pin(2+Tab) DPAK+ T/R

***el Electronic: MOSFET UMOSVIII 100V 10m max(VGS=10V) DPAK

*** Source Electronics: Trans MOSFET N-CH Si 100V 35A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 100V 35A DPAK

***ure Electronics: Single N-Channel 100 V 28.5 mOhm 39 nC HEXFET® Power Mosfet - DPAK

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***(Formerly Allied Electronics): MOSFET, 100V, 35A, 28.5 MOHM, 39 NC QG, D-PAK | Infineon IRFR540ZTRLPBF

***icontronic: Power Field-Effect Transistor, 35A I(D), 100V, 0.0285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Lighting LED

***ark: Mosfet; Transistor Polarity:n Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0285Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:91W; Product Range:-Rohs Compliant: Yes

***ure Electronics: Single N-Channel 100 V 25 mOhm 23 nC OptiMOS Power Mosfet - DPAK

***p One Stop: Trans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) DPAK T/R

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO252-3, RoHS

***ment14 APAC: MOSFET, N-CH, 100V, 35A, TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:71W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***emi: N-Channel PowerTrench® MOSFET, 100V, 25A, 46mΩ

***ure Electronics: N-Channel 100 V 46 mOhm Surface Mount PowerTrench Mosfet TO-252-3

***r Electronics: Power Field-Effect Transistor, 25A I(D), 100V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:25A; On Resistance, Rds(on):46mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252 ;RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

***emi: N-Channel Logic Level Power MOSFET 100V, 25A, 50mΩ Automotive Power MOSFET 100V Logic Level

***ical: Trans MOSFET N-CH 100V 25A Automotive 3-Pin(2+Tab) DPAK T/R

*** Electronics: MOSFET NFET DPAK 100V 23A 56MOHM

***r Electronics: Power Field-Effect Transistor, 25A I(D), 100V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***el Electronic: RES SMD 19.6K OHM 1% 1/16W 0402

***icroelectronics: N-CHANNEL 100V - 0.038 OHM - 30A DPAK LOW GATE CHARGE STRIPFET II MOSFET

***va Crawler: N-channel 100 V, 0.038 Ohm typ., 25 A STripFET II Power MOSFET in a DPAK package

***r Electronics: Power Field-Effect Transistor, 25A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Market price

Part #	Mfg.	Description	Stock	Price
TK33S10N1Z,LQ(O DISTI # C1S751201157971	Toshiba America Electronic Components	Trans MOSFET N-CH Si 100V 33A Automotive 3-Pin(2+Tab) DPAK RoHS: Compliant	1900	1000:$2.7300 500:$2.7700 200:$3.0300 60:$3.3900 20:$3.7200
TK33S10N1Z,LQ DISTI # TK33S10N1ZLQCT-ND	Toshiba America Electronic Components	MOSFET N-CH 100V 33A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4154In Stock	1000:$0.7733 500:$0.9795 100:$1.2630 10:$1.5980 1:$1.8000
TK33S10N1Z,LQ DISTI # TK33S10N1ZLQDKR-ND	Toshiba America Electronic Components	MOSFET N-CH 100V 33A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4154In Stock	1000:$0.7733 500:$0.9795 100:$1.2630 10:$1.5980 1:$1.8000
TK33S10N1Z,LQ DISTI # TK33S10N1ZLQTR-ND	Toshiba America Electronic Components	MOSFET N-CH 100V 33A DPAK RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	4000In Stock	2000:$0.7007
TK33S10N1Z,LQ DISTI # TK33S10N1Z,LQ	Toshiba America Electronic Components	Trans MOSFET N-CH 100V 33A 3-Pin DPAK - Tape and Reel (Alt: TK33S10N1Z,LQ) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 0	2000:$0.7129 4000:$0.6709 8000:$0.6319 12000:$0.5989 20000:$0.5829
TK33S10N1Z,LQ DISTI # 757-TK33S10N1ZLQ	Toshiba America Electronic Components	MOSFET UMOSVIII 100V 10m max(VGS=10V) DPAK RoHS: Compliant	13709	1:$1.5900 10:$1.2800 100:$0.9790 500:$0.8650 1000:$0.6830 2000:$0.6060 10000:$0.5830

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TK33S10N1Z,LQ

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes