IPP60R190E6XKSA1

Mfr. #:: IPP60R190E6XKSA1
Manufacturer:: Infineon Technologies
Description:: MOSFET HIGH POWER_LEGACY
Lifecycle:: New from this manufacturer.
Datasheet:: IPP60R190E6XKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Tradename:: CoolMOS

Packaging:: Tube

Height:: 15.65 mm

Length:: 10 mm

Width:: 4.4 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Subcategory:: MOSFETs

Part # Aliases:: IPP60R190E6 IPP6R19E6XK SP000797378

Unit Weight:: 0.211644 oz

Tags: IPP60R190E, IPP60R190, IPP60R19, IPP60R1, IPP60R, IPP60, IPP6, IPP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPP60R190E6XKSA1 Description

***ure Electronics: Single N-Channel 600 V 190 mOhm 63 nC CoolMOS Power Mosfet - TO-220-3

*** Source Electronics: MOSFET N-CH 600V 20.2A TO220 / Trans MOSFET N-CH 650V 20.2A Automotive 3-Pin(3+Tab) TO-220 Tube

***ineon SCT: CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS

***nell: MOSFET, N-CH, 600V, 20.2A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 20.2A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.17ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;

***ineon: CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***ical: Trans MOSFET N-CH 650V 20.2A Automotive 3-Pin(3+Tab) TO-220FP Tube

***et: Transistor MOSFET N-CH 650V 22.2A 3-Pin TO-220

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.7pF 50volts C0G +/-0.25pF

***nell: MOSFET, N CH, 650V, 20.2A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 20.2A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.17ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;

*** Stop Electro: Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon SCT: CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS

***ineon: CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***ical: Trans MOSFET N-CH 600V 23.8A 3-Pin(3+Tab) TO-220

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 7.0pF 50volts C0G +/-0.5pF

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS

***ment14 APAC: MOSFET,N CH,600V,23.8A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:23.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:176W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:23.8A; Power Dissipation Pd:176W; Voltage Vgs Max:30V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 23.8 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) mOhm = 160 / Gate-Source Voltage V = 20 / Fall Time ns = 8 / Rise Time ns = 13 / Turn-OFF Delay Time ns = 96 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 176

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***ure Electronics: Single N-Channel 600 V 190 mOhm 63 nC CoolMOS Power Mosfet - TO-220-3FP

***p One Stop Global: Trans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-220 Full-Pak

***ponent Stockers USA: 20.2 A 600 V 0.19 ohm N-CHANNEL Si POWER MOSFET TO-220AB

*** Stop Electro: Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS

***ment14 APAC: MOSFET,N CH,600V,20.2A,TO220-FP; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:34W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:20.2A; Power Dissipation Pd:34W; Voltage Vgs Max:30V

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***emi: N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220F

***Yang: Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube

*** Stop Electro: Power Field-Effect Transistor, 20.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, N-CH, 600V, 20.6A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***enic: 600V 23A 227W 158m´Î@10V12A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***et: Trans MOSFET N-CH 600V 23A 3-Pin TO-220AB

***el Electronic: MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS

***icroelectronics: N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in TO-220 package

***ical: Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220AB Tube

***el Electronic: Dual-Output, 2-A/1-A Low Dropout Voltage Regulators with Integrated SVS 24-HTSSOP -40 to 125

***ure Electronics: Single N-Channel 650 V 0.15 O 190 W Flange Mount Power Mosfet - TO-220-3

***ark: MOSFET, N-CH, 600V, 22A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 22A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Market price

Part #	Mfg.	Description	Stock	Price
IPP60R190E6XKSA1 DISTI # V36:1790_06377993	Infineon Technologies AG	Trans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	0	500000:$1.2670 250000:$1.2700 50000:$1.4550 5000:$1.7700 500:$1.8220
IPP60R190E6XKSA1 DISTI # V99:2348_06377993	Infineon Technologies AG	Trans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	0	500000:$1.3620 250000:$1.3640 50000:$1.5210 5000:$1.7800 500:$1.8220
IPP60R190E6XKSA1 DISTI # IPP60R190E6XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 600V 20.2A TO220 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call	500:$1.8223
IPP60R190E6 DISTI # IPP60R190E6XKSA1	Infineon Technologies AG	Trans MOSFET N-CH 650V 20.2A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP60R190E6XKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	2000:$1.2900 3000:$1.2900 5000:$1.2900 1000:$1.3900 500:$1.4900
IPP60R190E6 DISTI # 726-IPP60R190E6	Infineon Technologies AG	MOSFET N-Ch 650V 20.2A TO220-3 CoolMOS E6 RoHS: Compliant	0	1:$2.7600 10:$2.3500 100:$2.0300 250:$1.9300 500:$1.7300
IPP60R190E6XKSA1 DISTI # IPP60R190E6	Infineon Technologies AG	N-Ch 600V 20,2A 151W 0,19R TO220 RoHS: Compliant	459	1:€5.4000 10:€2.4000 50:€1.4000 100:€1.2900
IPP60R190E6XKSA1 DISTI # 2480860	Infineon Technologies AG	MOSFET, N-CH, 600V, 20.2A, TO-220-3 RoHS: Compliant	0	500:$2.6100 250:$2.9100 100:$3.0600 10:$3.5400 1:$4.1600

Image	Part #	Description
	Mfr.#: IPP60R190C6 OMO.#: OMO-IPP60R190C6	MOSFET N-Ch 650V 20.2A TO220-3 CoolMOS C6
	Mfr.#: IPP60R190E6 OMO.#: OMO-IPP60R190E6	MOSFET N-Ch 650V 20.2A TO220-3 CoolMOS E6
	Mfr.#: IPP60R190C6 6R190C6 OMO.#: OMO-IPP60R190C6-6R190C6-1190	New and Original
	Mfr.#: IPP60R190C6 , 2SJ130 OMO.#: OMO-IPP60R190C6-2SJ130-1190	New and Original
	Mfr.#: IPP60R190E6,6R190E6, OMO.#: OMO-IPP60R190E6-6R190E6--1190	New and Original
	Mfr.#: IPP60R190P6 OMO.#: OMO-IPP60R190P6-1190	- Bulk (Alt: IPP60R190P6)
	Mfr.#: IPP60R199 OMO.#: OMO-IPP60R199-1190	New and Original
	Mfr.#: IPP60R199CP , 2SJ132 OMO.#: OMO-IPP60R199CP-2SJ132-1190	New and Original
	Mfr.#: IPP60R199CP HF OMO.#: OMO-IPP60R199CP-HF-1190	New and Original
	Mfr.#: IPP60R199CPXKSA1 OMO.#: OMO-IPP60R199CPXKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 16A TO220-3

IPP60R190E6XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes