CGH40010F

CGH40010F
Mfr. #:
CGH40010F
Manufacturer:
N/A
Description:
RF JFET Transistors GaN HEMT DC-6.0GHz, 10 Watt
Lifecycle:
New from this manufacturer.
Datasheet:
CGH40010F Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CGH40010F more Information
Product Attribute
Attribute Value
Manufacturer:
Cree, Inc.
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN
Gain:
14.5 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
120 V
Vgs - Gate-Source Breakdown Voltage:
- 10 V to 2 V
Id - Continuous Drain Current:
1.5 A
Output Power:
12.5 W
Maximum Drain Gate Voltage:
-
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
-
Mounting Style:
Screw Mount
Package / Case:
440166
Packaging:
Tube
Application:
-
Configuration:
Single
Height:
3.43 mm
Length:
5.21 mm
Operating Frequency:
2 GHz to 6 GHz
Operating Temperature Range:
-
Product:
GaN HEMT
Width:
4.19 mm
Brand:
Wolfspeed / Cree
Forward Transconductance - Min:
-
Gate-Source Cutoff Voltage:
-
Class:
-
Development Kit:
CGH40010-TB
Fall Time:
-
NF - Noise Figure:
-
P1dB - Compression Point:
-
Product Type:
RF JFET Transistors
Rds On - Drain-Source Resistance:
-
Rise Time:
-
Factory Pack Quantity:
250
Subcategory:
Transistors
Typical Turn-Off Delay Time:
-
Vgs th - Gate-Source Threshold Voltage:
- 3 V
Tags
CGH40010F, CGH40010, CGH4001, CGH400, CGH40, CGH4, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
RF MOSFET HEMT 28V 440166
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Part # Mfg. Description Stock Price
CGH40010F
DISTI # CGH40010F-ND
WolfspeedRF MOSFET HEMT 28V 440166
RoHS: Compliant
Min Qty: 1
Container: Tray
1686In Stock
  • 1:$58.4800
CGH40010F-TB
DISTI # CGH40010F-TB-ND
WolfspeedBOARD DEMO AMP CIRCUIT CGH40010
RoHS: Compliant
Min Qty: 1
Container: Bulk
9In Stock
  • 1:$550.0000
CGH40010F
DISTI # 941-CGH40010F
Cree, Inc.RF JFET Transistors GaN HEMT DC-6.0GHz, 10 Watt
RoHS: Compliant
809
  • 1:$58.4800
CGH40010F-TB
DISTI # 941-CGH40010F-TB
Cree, Inc.RF Development Tools Test Board without GaN HEMT
RoHS: Not compliant
3
  • 1:$550.0000
CGH40010F
DISTI # CGH40010F
WolfspeedRF POWER TRANSISTOR
RoHS: Compliant
190
  • 1:$58.4800
CGH40010F-TB
DISTI # CGH40010F-TB
WolfspeedRF TRANSISTOR TEST FIXTURE
RoHS: Compliant
2
  • 2:$550.0000
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Availability
Stock:
491
On Order:
2474
Enter Quantity:
Current price of CGH40010F is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$55.88
$55.88
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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