BGAU1A10E6327XTSA1

Mfr. #:: BGAU1A10E6327XTSA1
Manufacturer:: Infineon Technologies
Description:: RF Amplifier RF SILICON MMIC
Lifecycle:: New from this manufacturer.
Datasheet:: BGAU1A10E6327XTSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: BGAU1A10E6327XTSA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: RF Amplifier

RoHS:: Y

Mounting Style:: SMD/SMT

Package / Case:: ATSLP

Type:: LNA

Operating Frequency:: 5.15 GHz to 5.914 GHz

P1dB - Compression Point:: 3 dBm

Gain:: 27 dB

Operating Supply Voltage:: 1.8 V

NF - Noise Figure:: 1.6 dB

Test Frequency:: 5500 MHz

OIP3 - Third Order Intercept:: 30 dBm

Operating Supply Current:: 5 mA

Minimum Operating Temperature:: - 30 C

Maximum Operating Temperature:: + 85 C

Packaging:: Reel

Brand:: Infineon Technologies

Number of Channels:: 1 Channel

Input Return Loss:: 20 dB

Isolation dB:: 38 dB

Moisture Sensitive:: Yes

Pd - Power Dissipation:: 90 mW

Product Type:: RF Amplifier

Factory Pack Quantity:: 4500

Subcategory:: Wireless & RF Integrated Circuits

Part # Aliases:: BGA E6327 SP001628070 U1A10

Tags: BGA

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

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BGAU1A10E6327XTSA1 Description

***et Japan: RF Low Noise Amp Single 5.15GHz to 5.925GHz -18dB 10-Pin ATSLP-3 T/R

***ment14 APAC: RF AMPLIFIER, 5.925GHZ, -30 TO 85DEG C

***ark: Rf Amplifier, 5.925Ghz, -30 To 85Deg C; Frequency Min:5.15Ghz; Frequency Max:5.925Ghz; Gain:20.5Db; Noise Figure Typ:1.6Db; Rf Ic Case Style:atslp; No. Of Pins:10Pins; Supply Voltage Min:1.7V; Supply Voltage Max:1.9V; Operating Rohs Compliant: Yes

BGAU1A10E6327XTSA1 More Information

BGAx1A10 LTE LNA with Gain Control: Infineon Technologies BGAx1A10 LTE Low Noise Amplifiers (LNA) with Gain Control are designed to significantly improve the data rate. These BGAx1A10 LNAs feature an integrated gain control, bypass function, high system flexibility, 27dB gain dynamic range, and a low noise figure. The bypass mode reduces current consumption and the Mobile Industry Processor Interface (MIPI) control interface reduces the control lines to a minimum. The BGAx1A10 LNAs ensures high LTE data rates due to high gain feature and higher system flexibility due to integrated gain control. These BGAx1A10 LNAs offer best noise figure in the high gain mode that guarantees high data rates even on the LTE cell edge. The BGAx1A10 LNAs are ideal for use in smartphones.

Market price

Part #	Mfg.	Description	Stock	Price
BGAU1A10E6327XTSA1 DISTI # BGAU1A10E6327XTSA1CT-ND	Infineon Technologies AG	IC RF AMP 5GHZ 10ATSLP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3300In Stock	1000:$0.3862 500:$0.4893 100:$0.5923 10:$0.7600 1:$0.8500
BGAU1A10E6327XTSA1 DISTI # BGAU1A10E6327XTSA1DKR-ND	Infineon Technologies AG	IC RF AMP 5GHZ 10ATSLP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3300In Stock	1000:$0.3862 500:$0.4893 100:$0.5923 10:$0.7600 1:$0.8500
BGAU1A10E6327XTSA1 DISTI # BGAU1A10E6327XTSA1TR-ND	Infineon Technologies AG	IC RF AMP 5GHZ 10ATSLP RoHS: Compliant Min Qty: 4500 Container: Tape & Reel (TR)	Temporarily Out of Stock	31500:$0.3100 13500:$0.3200 9000:$0.3325 4500:$0.3500
BGAU1A10E6327XTSA1 DISTI # SP001628070	Infineon Technologies AG	RF SILICON MMIC (Alt: SP001628070) RoHS: Compliant Min Qty: 4500	Europe - 4500	45000:€0.3659 27000:€0.3859 18000:€0.4499 9000:€0.5279 4500:€0.6139
BGAU1A10E6327XTSA1 DISTI # BGAU1A10E6327XTSA1	Infineon Technologies AG	RF SILICON MMIC - Tape and Reel (Alt: BGAU1A10E6327XTSA1) RoHS: Compliant Min Qty: 4500 Container: Reel	Americas - 0	45000:$0.3169 27000:$0.3229 18000:$0.3339 9000:$0.3469 4500:$0.3599
BGAU1A10E6327XTSA1 DISTI # 81AC4450	Infineon Technologies AG	RF AMPLIFIER, 5.925GHZ, -30 TO 85DEG C,Frequency Min:5.15GHz,Frequency Max:5.925GHz,Gain:20.5dB,Noise Figure Typ:1.6dB,RF IC Case Style:ATSLP,No. of Pins:10Pins,Supply Voltage Min:1.7V,Supply Voltage Max:1.9V,Operating RoHS Compliant: Yes	4500	1000:$0.3790 500:$0.4810 250:$0.5120 100:$0.5430 50:$0.5980 25:$0.6520 10:$0.7070 1:$0.8380
BGAU1A10E6327XTSA1 DISTI # 726-BGAU1A10E6327XTS	Infineon Technologies AG	RF Amplifier RF SILICON MMIC RoHS: Compliant	3009	1:$0.8300 10:$0.7000 100:$0.5380 500:$0.4760 1000:$0.3750 2500:$0.3330 4500:$0.3330 9000:$0.3210 22500:$0.3100
BGAU1A10E6327XTSA1 DISTI # 2947798	Infineon Technologies AG	RF AMPLIFIER, 5.925GHZ, -30 TO 85DEG C	4500	500:£0.3450 250:£0.3680 100:£0.3900 50:£0.5070 1:£0.5800
BGAU1A10E6327XTSA1 DISTI # XSKDRABV0044651	Infineon Technologies AG	RFSmallSignalBipolarTransistor,0.03AI(C),2-Element,LBand,Silicon,NPN RoHS: Compliant	13500 in Stock0 on Order	13500:$0.4880 4500:$0.5229
BGAU1A10E6327XTSA1 DISTI # 2947798	Infineon Technologies AG	RF AMPLIFIER, 5.925GHZ, -30 TO 85DEG C RoHS: Compliant	4500	1:$0.5580

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Availability

Stock:: Available
On Order:: 1986
Enter Quantity:

Current price of BGAU1A10E6327XTSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.83~~; ~~$0.83~~

10: ~~$0.70~~; ~~$7.00~~

100: ~~$0.54~~; ~~$53.80~~

500: ~~$0.48~~; ~~$238.00~~

1000: ~~$0.38~~; ~~$375.00~~

2500: ~~$0.33~~; ~~$832.50~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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BGAU1A10E6327XTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes