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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Part # | Mfg. | Description | Stock | Price |
---|---|---|---|---|
SKM100GB12V DISTI # 55X3182 | SEMIKRON | IGBT MODULE, DUAL N CH, 1.2KV, 159A,Transistor Polarity:Dual N Channel,DC Collector Current:159A,Collector Emitter Saturation Voltage Vce(on):1.75V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case, RoHS Compliant: Yes | 8 |
|
SKM100GB12V DISTI # 71043245 | SEMIKRON | SEMITRANS,1200V,100A RoHS: Compliant | 0 |
|
SKM100GB12V DISTI # SKM100GB12V | SEMIKRON | IGBT half-bridge,Urmax:1.2kV,Ic:100A,SEMITRANS2,screw,screw | 3 |
|
SKM100GB12V | SEMIKRON | Insulated Gate Bipolar Transistor, 155A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant | 24 | |
SKM100GB12V DISTI # 2423683 | SEMIKRON | IGBT MODULE, DUAL N CH, 1.2KV, 159A RoHS: Compliant | 8 |
|
SKM100GB12V DISTI # 2423683 | SEMIKRON | IGBT MODULE, DUAL N CH, 1.2KV, 159A RoHS: Compliant | 8 |
|
Image | Part # | Description |
---|---|---|
Mfr.#: SKM10A-15 OMO.#: OMO-SKM10A-15-MEAN-WELL |
DC DC CONVERTER 15V 10W | |
Mfr.#: SKM1006NP OMO.#: OMO-SKM1006NP-1190 |
New and Original | |
Mfr.#: SKM100GAL12T4 OMO.#: OMO-SKM100GAL12T4-1190 |
IGBT Array & Module Transistor, N Channel, 160 A, 1.8 V, 1.2 kV, Module RoHS Compliant: Yes | |
Mfr.#: SKM100GAL12TA OMO.#: OMO-SKM100GAL12TA-1190 |
Insulated Gate Bipolar Transistor, 160A I(C), 1200V V(BR)CES | |
Mfr.#: SKM100GB06D OMO.#: OMO-SKM100GB06D-1190 |
New and Original | |
Mfr.#: SKM100GB124D OMO.#: OMO-SKM100GB124D-1190 |
New and Original | |
Mfr.#: SKM100GB128D OMO.#: OMO-SKM100GB128D-1190 |
POWER IGBT TRANSISTOR | |
Mfr.#: SKM100GB128DE OMO.#: OMO-SKM100GB128DE-1190 |
New and Original | |
Mfr.#: SKM100GB12T4 OMO.#: OMO-SKM100GB12T4-1190 |
IGBT Array & Module Transistor, Dual N Channel, 160 A, 1.8 V, 1.2 kV, Module RoHS Compliant: Yes | |
Mfr.#: SKM100GB12T4G OMO.#: OMO-SKM100GB12T4G-1190 |
IGBT MODULE, DUAL, 1.2KV, 154A, Transistor Polarity:Dual NPN, DC Collector Current:154A, Collector Emitter Saturation Voltage Vce(on):1.85V, Power Dissipation Pd:-, Collector Emitter Voltage V(br |