IPP093N06N3 G

IPP093N06N3 G
Mfr. #:
IPP093N06N3 G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 60V 50A TO220-3 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
IPP093N06N3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPP093N06N3 G more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
50 A
Rds On - Drain-Source Resistance:
9 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
36 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
71 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Tube
Height:
15.65 mm
Length:
10 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Type:
OptiMOS 3 Power-Transistor
Width:
4.4 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
55 S, 28 S
Fall Time:
5 ns
Product Type:
MOSFET
Rise Time:
40 ns
Factory Pack Quantity:
500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
20 ns
Typical Turn-On Delay Time:
15 ns
Part # Aliases:
IPP093N06N3GXKSA1 IPP93N6N3GXK SP000680852
Unit Weight:
0.211644 oz
Tags
IPP093, IPP09, IPP0, IPP
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
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Availability
Stock:
611
On Order:
2594
Enter Quantity:
Current price of IPP093N06N3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.14
$1.14
10
$0.98
$9.80
100
$0.75
$75.30
500
$0.67
$333.00
1000
$0.52
$525.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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