IRG7PH46UDPBF

Mfr. #:: IRG7PH46UDPBF
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors 1200V 108A
Lifecycle:: New from this manufacturer.
Datasheet:: IRG7PH46UDPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRG7PH46UDPBF Datasheet IRG7PH46UDPBF Datasheet (P4-P6)IRG7PH46UDPBF Datasheet (P7-P9)IRG7PH46UDPBF Datasheet (P10-P11)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 1.2 kV

Collector-Emitter Saturation Voltage:: 2 V

Maximum Gate Emitter Voltage:: 30 V

Continuous Collector Current at 25 C:: 108 A

Pd - Power Dissipation:: 390 W

Minimum Operating Temperature:: - 55 C

Packaging:: Tube

Height:: 20.7 mm

Length:: 15.87 mm

Width:: 5.31 mm

Brand:: Infineon Technologies

Product Type:: IGBT Transistors

Factory Pack Quantity:: 400

Subcategory:: IGBTs

Part # Aliases:: SP001542050

Unit Weight:: 1.340411 oz

Tags: IRG7PH46UD, IRG7PH46, IRG7PH4, IRG7PH, IRG7P, IRG7, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRG7PH46UDPBF Description

***ineon SCT: 1200V UltraFast Low VCE(ON) trench IGBT in a TO-247AC package, TO247COPAK-3, RoHS

***ure Electronics: IRG7PH46UDPBF Series 1200 V 108 A Insulated Gate Bipolar Transistor - TO-247AC

***Yang: Trans IGBT Chip N-CH 1.2KV 108A 3-Pin(3+Tab) TO-247AC - Rail/Tube

***ineon: Target Applications: Solar; UPS; Welding

***ark: TUBE / 1200V 108.000A COPAK-247 ;ROHS COMPLIANT: YES

***or: IGBT, 108A I(C), 1200V V(BR)CES,

***el Electronic: CAP CER 10PF 50V 5% NP0 RADIAL

***ical: Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247AC Tube

***ark: Igbt, Single, 1.2Kv, 40A, To-247Ac-3

*** Electronic Components: IGBT Transistors 1200V IGBT GEN8

***or: IGBT WITH ULTRAFAST SOFT RECOVER

***el Electronic: CAP CER 47PF 100V 5% NP0 RADIAL

***nell: IGBT, SINGLE, 1.2KV, 40A, TO-247AC-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 180W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AC; No.

***ical: Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247AD Tube

***el Electronic: Multilayer Ceramic Capacitors MLCC - Leaded 390pF 100volts C0G LS=5mm +/-5%

*** Electronic Components: IGBT Transistors 1200V IGBT GEN8

***or: IRG8P25N120 - DISCRETE IGBT WITH

***ark: G8, 1200V, 25A, COPAK-247AD, TUBE

***ernational Rectifier: 1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode

***ical: Trans IGBT Chip N-CH 1200V 50A 180000mW 3-Pin(3+Tab) TO-247AC Tube

***ment14 APAC: TRANSISTOR, BIPOLAR, N CHANNEL, 1.2KV, TO-247AD; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Product Range:-

***ical: Trans IGBT Chip N-CH 1200V 30A 333000mW 3-Pin(3+Tab) TO-247 Tube

*** Stop Electro: Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AB

***emi: IGBT, 1200V, 15A, Field Stop Trench

***ark: RAIL/1200V 15A FS2 Trench IGBT

***el Electronic: IC REG LINEAR 24V 500MA TO252-3

***rchild Semiconductor: Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.

***ical: Trans IGBT Chip N-CH 1200V 50A 428000mW 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AB

***emi: IGBT, 1200V, 25A Field Stop Trench

***ark: RAIL/1200V 25A FS2 Trench IGBT

***rchild Semiconductor: Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.

***i-Key: IGBT 1200V 40A 278W TO-247AD

***ure Electronics: IGBT Transistors GenX3 1200V XPT IGBT

Market price

Part #	Mfg.	Description	Stock	Price
IRG7PH46UDPBF DISTI # 8378589	Infineon Technologies AG	Trans IGBT Chip N-CH 1200V 108A 390000mW 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	14	14:$10.0851
IRG7PH46UDPBF DISTI # IRG7PH46UDPBF-ND	Infineon Technologies AG	IGBT 1200V 40A 390W TO247AC RoHS: Compliant Min Qty: 1 Container: Tube	63In Stock	10:$10.1870 1:$11.0800
IRG7PH46UDPBF DISTI # SP001542050	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 108A 3-Pin(3+Tab) TO-247AC (Alt: SP001542050) RoHS: Compliant Min Qty: 1	Europe - 310	10:€5.6000 5:€6.2500 1:€7.5400
IRG7PH46UDPBF DISTI # IRG7PH46UDPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 108A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: IRG7PH46UDPBF) Min Qty: 50 Container: Bulk	Americas - 0	500:$6.2900 250:$6.4900 150:$6.6900 100:$6.8900 50:$7.1900
IRG7PH46UDPBF DISTI # 70019799	Infineon Technologies AG	IRG7PH46UDPBF,108 A 1200 V,3-Pin TO-247AC RoHS: Compliant	0	1:$18.6570
IRG7PH46UDPBF DISTI # 942-IRG7PH46UDPBF	Infineon Technologies AG	IGBT Transistors 1200V 108A RoHS: Compliant	0
IRG7PH46UDPBF	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 108A I(C), 1200V V(BR)CES, N-Channel, TO-247AC RoHS: Compliant	150	1000:$6.6200 500:$6.9700 100:$7.2500 25:$7.5600 1:$8.1500
IRG7PH46UDPBF	International Rectifier		8
IRG7PH46UDPBF DISTI # IRG7PH46UDPBF	Infineon Technologies AG	Transistor: IGBT,1.2kV,57A,390W,TO247-3	32	1:$12.0100 3:$11.2000 10:$9.2400 25:$8.2200
IRG7PH46UDPBF DISTI # 1857374	Infineon Technologies AG	IGBT,N CH,DIODE1200V,40A,TO-247AC RoHS: Compliant	14	10:$15.4400 1:$16.7800
IRG7PH46UDPBF DISTI # 1857374	Infineon Technologies AG	IGBT,N CH,DIODE1200V,40A,TO-247AC RoHS: Compliant	30	10:£5.3400 5:£5.9600 1:£7.1900

Image	Part #	Description
	Mfr.#: IRG7PH42UD2-EP OMO.#: OMO-IRG7PH42UD2-EP	IGBT Transistors COPAK-247
	Mfr.#: IRG7PH42UD2PBF OMO.#: OMO-IRG7PH42UD2PBF-INFINEON-TECHNOLOGIES	IGBT 1200V 60A 321W TO247AC
	Mfr.#: IRG7PH50UPBF OMO.#: OMO-IRG7PH50UPBF-INFINEON-TECHNOLOGIES	IGBT Transistors 1200V 140A
	Mfr.#: IRG7PH30K10DPBF OMO.#: OMO-IRG7PH30K10DPBF-INFINEON-TECHNOLOGIES	IGBT Transistors 1200V 30A
	Mfr.#: IRG7PH30K10PBF OMO.#: OMO-IRG7PH30K10PBF-INFINEON-TECHNOLOGIES	IGBT 1200V 33A 210W TO247AC
	Mfr.#: IRG7PH28UD1PBF OMO.#: OMO-IRG7PH28UD1PBF-INFINEON-TECHNOLOGIES	IGBT Transistors 1200V UltraFast Discrete IGBT
	Mfr.#: IRG7PH35UDPBF OMO.#: OMO-IRG7PH35UDPBF-INFINEON-TECHNOLOGIES	IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A
	Mfr.#: IRG7PH35UD1 OMO.#: OMO-IRG7PH35UD1-1190	New and Original
	Mfr.#: IRG7PH42UD1-EP OMO.#: OMO-IRG7PH42UD1-EP-INFINEON-TECHNOLOGIES	IGBT 1200V 85A COPAK247
	Mfr.#: IRG7PH42UD1PBF,G7PH42UD1 OMO.#: OMO-IRG7PH42UD1PBF-G7PH42UD1-1190	New and Original

IRG7PH46UDPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes