FDMS86200E

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PQFN-56

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

150 V

Id - Continuous Drain Current:

35 A

Rds On - Drain-Source Resistance:

18 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

33 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

104 W

Configuration:

Single Triple Source Quad Drain

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

1 N-Channel PowerTRENCH MOSFET

Brand:

ON Semiconductor

Forward Transconductance - Min:

33 S

Fall Time:

5.8 ns

Product Type:

MOSFET

Rise Time:

7.9 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

27 ns

Typical Turn-On Delay Time:

13 ns

Tags

FDMS86200, FDMS8620, FDMS862, FDMS86, FDMS8, FDMS, FDM