SI4946CDY-T1-GE3

SI4946CDY-T1-GE3
Mfr. #:
SI4946CDY-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET N-CHAN DUAL 60V SO-8
Lifecycle:
New from this manufacturer.
Datasheet:
SI4946CDY-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SI4946CDY-T1-GE3 more Information
Product Attribute
Attribute Value
Tags
SI4946, SI494, SI49, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 5.2A 8-Pin SOIC N T/R
***et Europe
Trans MOSFET N-CH 60V 5.2A 8-Pin SOIC
***i-Key
MOSFET N-CHAN DUAL 60V SO-8
***ark
Mosfet, Dual N-Ch, 60V, Soic; Transistor Polarity:dual N Channel; Continuous Drain Current Id:6.1A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.033Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, DUAL N-CH, 60V, SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:6.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:2.8W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, DOPPIO CA-N, 60V, SOIC; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:6.1A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.033ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:2.8W; Modello Case Transistor:SOIC; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Part # Mfg. Description Stock Price
SI4946CDY-T1-GE3
DISTI # V72:2272_21688014
Vishay IntertechnologiesSI4946CDY-T1-GE33681
  • 75000:$0.3232
  • 30000:$0.3274
  • 15000:$0.3317
  • 6000:$0.3360
  • 3000:$0.3402
  • 1000:$0.3604
  • 500:$0.4675
  • 250:$0.5313
  • 100:$0.5669
  • 50:$0.7125
  • 25:$0.7387
  • 10:$0.8362
  • 1:$0.9462
SI4946CDY-T1-GE3
DISTI # SI4946CDY-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CHAN DUAL 60V SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2808In Stock
  • 1000:$0.3942
  • 500:$0.4993
  • 100:$0.6045
  • 10:$0.7750
  • 1:$0.8700
SI4946CDY-T1-GE3
DISTI # SI4946CDY-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CHAN DUAL 60V SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2808In Stock
  • 1000:$0.3942
  • 500:$0.4993
  • 100:$0.6045
  • 10:$0.7750
  • 1:$0.8700
SI4946CDY-T1-GE3
DISTI # SI4946CDY-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CHAN DUAL 60V SO-8
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
2500In Stock
  • 25000:$0.3232
  • 12500:$0.3317
  • 5000:$0.3444
  • 2500:$0.3700
SI4946CDY-T1-GE3
DISTI # 27066269
Vishay IntertechnologiesSI4946CDY-T1-GE33681
  • 21:$0.9462
SI4946CDY-T1-GE3
DISTI # SI4946CDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 60V 5.2A 8-Pin SOIC - Tape and Reel (Alt: SI4946CDY-T1-GE3)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 50000:$0.3109
  • 25000:$0.3199
  • 15000:$0.3289
  • 10000:$0.3429
  • 5000:$0.3529
SI4946CDY-T1-GE3
DISTI # SI4946CDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 60V 5.2A 8-Pin SOIC (Alt: SI4946CDY-T1-GE3)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€0.3329
  • 500:€0.3389
  • 100:€0.3439
  • 50:€0.3579
  • 25:€0.3869
  • 10:€0.4499
  • 1:€0.6599
SI4946CDY-T1-GE3
DISTI # SI4946CDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 60V 5.2A 8-Pin SOIC (Alt: SI4946CDY-T1-GE3)
RoHS: Compliant
Min Qty: 5000
Asia - 0
    SI4946CDY-T1-GE3
    DISTI # 50AC9666
    Vishay IntertechnologiesMOSFET, DUAL N-CH, 60V, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:6.1A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.033ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes12028
    • 1000:$0.3930
    • 500:$0.4910
    • 250:$0.5430
    • 100:$0.5950
    • 50:$0.6580
    • 25:$0.7210
    • 10:$0.7840
    • 1:$0.9800
    SI4946CDY-T1-GE3
    DISTI # 59AC7484
    Vishay IntertechnologiesDUAL N-CHANNEL 60-V (D-S) MOSFET0
    • 50000:$0.3140
    • 30000:$0.3280
    • 20000:$0.3530
    • 10000:$0.3770
    • 5000:$0.4090
    • 1:$0.4180
    SI4946CDY-T1-GE3
    DISTI # 78-SI4946CDY-T1-GE3
    Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs SO-8
    RoHS: Compliant
    9742
    • 1:$0.9600
    • 10:$0.7750
    • 100:$0.5880
    • 500:$0.4860
    • 1000:$0.3880
    • 2500:$0.3520
    • 5000:$0.3280
    • 10000:$0.3150
    • 25000:$0.3030
    SI4946CDY-T1-GE3
    DISTI # 2846626
    Vishay IntertechnologiesMOSFET, DUAL N-CH, 60V, SOIC
    RoHS: Compliant
    12023
    • 1000:$0.5950
    • 500:$0.7530
    • 100:$0.9110
    • 5:$1.1700
    SI4946CDY-T1-GE3
    DISTI # 2846626
    Vishay IntertechnologiesMOSFET, DUAL N-CH, 60V, SOIC12478
    • 500:£0.3740
    • 250:£0.4140
    • 100:£0.4530
    • 10:£0.6520
    • 1:£0.8540
    Image Part # Description
    SI4946CDY-T1-GE3

    Mfr.#: SI4946CDY-T1-GE3

    OMO.#: OMO-SI4946CDY-T1-GE3

    MOSFET 60V Vds 20V Vgs SO-8
    SI4946CDY-T1-GE3

    Mfr.#: SI4946CDY-T1-GE3

    OMO.#: OMO-SI4946CDY-T1-GE3-VISHAY

    MOSFET N-CHAN DUAL 60V SO-8
    Availability
    Stock:
    Available
    On Order:
    1500
    Enter Quantity:
    Current price of SI4946CDY-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.00
    $0.00
    10
    $0.00
    $0.00
    100
    $0.00
    $0.00
    500
    $0.00
    $0.00
    1000
    $0.00
    $0.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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