MRFE6VP61K25HR6

Mfr. #:: MRFE6VP61K25HR6
Manufacturer:: NXP / Freescale
Description:: RF MOSFET Transistors VHV6 1.25KW ISM NI1230H
Lifecycle:: New from this manufacturer.
Datasheet:: MRFE6VP61K25HR6 Datasheet
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More Information:: MRFE6VP61K25HR6 more Information

Product Attribute
Attribute Value

Manufacturer:: NXP

Product Category:: RF MOSFET Transistors

RoHS:: Y

Transistor Polarity:: N-Channel

Technology:: Si

Id - Continuous Drain Current:: 10 uA

Vds - Drain-Source Breakdown Voltage:: 133 V

Gain:: 24 dB

Output Power:: 1.25 kW

Maximum Operating Temperature:: + 150 C

Mounting Style:: SMD/SMT

Package / Case:: NI-1230

Packaging:: Reel

Configuration:: Single

Operating Frequency:: 1.8 MHz, 600 MHz

Series:: MRFE6VP61K25H

Type:: RF Power MOSFET

Brand:: NXP / Freescale

Pd - Power Dissipation:: 1.333 kW

Product Type:: RF MOSFET Transistors

Factory Pack Quantity:: 150

Subcategory:: MOSFETs

Vgs - Gate-Source Voltage:: 10 V

Vgs th - Gate-Source Threshold Voltage:: 2.2 V

Part # Aliases:: 935314411128

Unit Weight:: 0.464036 oz

Tags: MRFE6VP61K25H, MRFE6VP61, MRFE6VP6, MRFE6VP, MRFE6V, MRFE6, MRFE, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

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MRFE6VP61K25HR6 Description

***W: RF Power Transistor,1.8 to 600 MHz, 1250 W, Typ Gain in dB is 22.9 @ 230 MHz, 50 V, LDMOS, SOT1787

***roFlash: RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***nell: TRANSISTOR, RF, 133V, NI-1230H-4S; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 1.333kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-1230;

***W: RF Power Transistor,1.8 to 2000 MHz, 100 W, Typ Gain in dB is 27.2 @ 512 MHz, 50 V, LDMOS, SOT1827

***roFlash: RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

***nell: TRANSISTOR, RF, 133V, NI-780H-4L; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 2000MHz; RF Transistor Case: NI-780; No. of Pins: 4Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: -; SVHC: No SVHC (15-Jan-2019)

***ark: LDMOS, RF, 100W, NI-780; Transistor Type:RF MOSFET; Drain Source Voltage Vds:133V DC; Power Dissipation Pd:100W; Operating Frequency Range:1.8MHz to 2GHz; Operating Temperature Min:-40°C; Operating Temperature Max:150°C

***W: RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V, CFM4F, RoHS

***ark: RF POWER FET, N CH, 125V, NI-780-4; Transistor Type:RF MOSFET; Drain Source Voltage Vds:125V; Continuous Drain Current Id:100mA; Power Dissipation Pd:300W; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; No. of Pins:4;RoHS Compliant: Yes

***W: RF Power Transistor,1.8 to 600 MHz, 600 W, Typ Gain in dB is 24.6 @ 230 MHz, 50 V, LDMOS, SOT1787

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V, CFM4F, RoHS

*** Source Electronics: FET RF 2CH 130V 230MHZ NI1230 / Trans RF MOSFET N-CH 130V 5-Pin Case 375D-05 T/R

***ure Electronics: MRFE6VPx Series 130 V 230 MHz RF Power Field Effect Transistor - NI-1230

***nell: TRANSISTOR, RF, 130V, NI-1230-4; Drain Source Voltage Vds: 130VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 1.667kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-1230; N

***(Formerly Allied Electronics): N-channel MOSFET Transistor 190 A 100 V 4-Pin SOT-227

***ical: Trans MOSFET N-CH 100V 190A 4-Pin SOT-227

*** Source Electronics: Power MOSFET, 190 A | MOSFET N-CH 100V 190A SOT227

***ukat: N-Ch 100V 190A 568W 0,0065R SOT227

***ronik: N-CH 100V 190A 6,5mOhm SOT-227

***ure Electronics: Output & SW Modules - ECONO IGBT-e3

***nell: MOSFET, N-CH, 100V, 190A, SOT-227; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:568W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-227; No. of Pins:4; MSL:-; Operating Temperature Range:-55°C to +150°C

***ure Electronics: N-Channel 125 V 389 W HF/VHF/UHF MOS Field-Effect RF Power Transistor-M174

***roFlash: Rf Fet Transistor, 125 V, 20 A, 389 W, 230 Mhz, M174 Rohs Compliant: Yes

***r Electronics: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***el Electronic: TDK - CGA2B3X7S2A102K050BB - Keramikvielschichtkondensator, SMD, 1000 pF, 100 V, 0402 [Metrisch 1005], ± 10%, X7S, Baureihe CGA

***nell: MOSFET, RF, 150W, 125V, 20A, M174; Drain Source Voltage Vds: 125V; Continuous Drain Current Id: 20A; Power Dissipation Pd: 389W; Operating Frequency Min: -; Operating Frequency Max: 230MHz; RF Transistor Case: M174; No. of Pin

***r Electronics: RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ure Electronics: STAC2942 Series 130 V 40 A 350 W 21 dB N-channel RF SMT Power Transistor

***el Electronic: TDK - CGA5L3X7R2E104K160AA - SMD flerskiktig keramisk kondensator, 0.1 µF, 250 V, 1206 [3216 Metrisk], ± 10%, X7R, CGA Serien

***nell: RF TRANSISTOR, 130V, 175MHZ, STAC244B; Drain Source Voltage Vds: 130V; Continuous Drain Current Id: 40A; Power Dissipation Pd: 625W; Operating Frequency Min: -; Operating Frequency Max: 175MHz; RF Transistor Case: STAC244B; No. of Pins: 4Pins; Operating Temperature Max: 200°C; Product Range: -; MSL: -; SVHC: No SVHC (07-Jul-2017)

MRFE6VP61K25HR6 More Information

MRF6Vx Lateral N-Ch Broadband RF Power MOSFETs: NXP's MRF6Vx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50 VDC, 230 MHz at all phase angles.Learn More

MRFE6VP61K25H Wideband RF Power LDMOS MOSFETs: NXP's MRFE6VP61K25H Wideband RF Power LDMOS MOSFETs are high ruggedness devices that are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. Features include devices can be used in either a single-ended or in a push-pull configuration, are suitable for linear application with appropriate biasing, and these devices have an integrated ESD protection with greater negative gate-source voltage range for improved Class C operation.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
MRFE6VP61K25HR6 DISTI # V72:2272_07204232	NXP Semiconductors	Trans RF MOSFET N-CH 133V 5-Pin Case 375D-05 T/R	57	25:$159.5000 10:$163.4100 1:$171.9700
MRFE6VP61K25HR6 DISTI # MRFE6VP61K25HR6CT-ND	NXP Semiconductors	FET RF 2CH 133V 230MHZ NI-1230 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	62In Stock	10:$167.3400 1:$174.7200
MRFE6VP61K25HR6 DISTI # MRFE6VP61K25HR6DKR-ND	NXP Semiconductors	FET RF 2CH 133V 230MHZ NI-1230 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	62In Stock	10:$167.3400 1:$174.7200
MRFE6VP61K25HR6 DISTI # MRFE6VP61K25HR6TR-ND	NXP Semiconductors	FET RF 2CH 133V 230MHZ NI-1230 RoHS: Compliant Min Qty: 150 Container: Tape & Reel (TR)	Temporarily Out of Stock	150:$158.8818
MRFE6VP61K25HR6 DISTI # 29730020	NXP Semiconductors	Trans RF MOSFET N-CH 133V 5-Pin Case 375D-05 T/R	1685	1:$324.0000
MRFE6VP61K25HR6 DISTI # 25767383	NXP Semiconductors	Trans RF MOSFET N-CH 133V 5-Pin Case 375D-05 T/R	57	25:$159.5600 10:$163.4700 1:$172.0600
MRFE6VP61K25HR6 DISTI # 29002535	NXP Semiconductors	Trans RF MOSFET N-CH 133V 5-Pin Case 375D-05 T/R	15	1:$324.0000
MRFE6VP61K25HR6 DISTI # MRFE6VP61K25HR6	NXP Semiconductors	Trans MOSFET N-CH 133V 4-Pin NI-1230H T/R (Alt: MRFE6VP61K25HR6) RoHS: Compliant Min Qty: 150 Container: Tape and Reel	Europe - 0	150:€141.3900 300:€140.8900 600:€140.3900 900:€139.8900 1500:€139.4900
MRFE6VP61K25HR6 DISTI # MRFE6VP61K25HR6	NXP Semiconductors	Trans MOSFET N-CH 133V 4-Pin NI-1230H T/R - Tape and Reel (Alt: MRFE6VP61K25HR6) RoHS: Compliant Min Qty: 150 Container: Reel	Americas - 0	150:$174.0900 300:$167.2900 600:$160.6900 900:$154.8900 1500:$151.8900
MRFE6VP61K25HR6 DISTI # MRFE6VP61K25HR6	NXP Semiconductors	Trans MOSFET N-CH 133V 4-Pin NI-1230H T/R (Alt: MRFE6VP61K25HR6) RoHS: Compliant Min Qty: 150 Container: Tape and Reel	Asia - 0
MRFE6VP61K25HR6 DISTI # 19T6331	NXP Semiconductors	Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V	0	1:$273.8300 10:$268.0500 25:$250.6900 150:$221.7700
MRFE6VP61K25HR6 DISTI # 31AC6674	NXP Semiconductors	TRANSISTOR, RF, 133V, NI-1230H-4S,Drain Source Voltage Vds:133VDC,Continuous Drain Current Id:-,Power Dissipation Pd:1.333kW,Operating Frequency Min:1.8MHz,Operating Frequency Max:600MHz,RF Transistor Case:NI-1230,No. of RoHS Compliant: Yes	134	1:$196.5400 10:$185.9800 25:$176.5000 50:$170.6200 100:$156.5500 250:$151.9000 500:$147.1600
MRFE6VP61K25HR6 DISTI # 841-MRFE6VP61K25HR6	NXP Semiconductors	RF MOSFET Transistors VHV6 1.25KW ISM NI1230H RoHS: Compliant	384	1:$174.7200 5:$170.8300 10:$167.3400 25:$164.8700 50:$161.8800 100:$160.3900 150:$158.8900
MRFE6VP61K25HR5 DISTI # 841-MRFE6VP61K25HR5	NXP Semiconductors	RF MOSFET Transistors VHV6 1.25KW ISM NI1230H RoHS: Compliant	83	1:$173.2100 5:$169.0400 10:$164.8500 25:$162.5400 50:$162.5400
MRFE6VP61K25HR6	Freescale Semiconductor	RoHS: Not Compliant	35	1000:$157.1800 500:$165.4600 100:$172.2600 25:$179.6400 1:$193.4600
MRFE6VP61K25HR6 DISTI # MRFE6VP61K25HR6	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	6980	1:$164.6600 10:$160.3200 25:$158.2400
MRFE6VP61K25HR6 DISTI # 2776247	NXP Semiconductors	TRANSISTOR, RF, 133V, NI-1230H-4S RoHS: Compliant	137	1:£180.0000 5:£149.0000
MRFE6VP61K25HR6 DISTI # C1S537101512836	NXP Semiconductors	Trans RF MOSFET N-CH 133V 5-Pin Case 375D-05 T/R RoHS: Compliant	67	25:$159.5600 10:$163.4700 1:$172.0600
MRFE6VP61K25HR6 DISTI # C1S233100254455	NXP Semiconductors	Trans RF MOSFET N-CH 133V 5-Pin Case 375D-05 T/R RoHS: Compliant	15	10:$306.0000 5:$313.0000 1:$367.0000
MRFE6VP61K25HR6 DISTI # 2776247	NXP Semiconductors	TRANSISTOR, RF, 133V, NI-1230H-4S RoHS: Compliant	134	1:$285.4400 5:$275.9200

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MRFE6VP61K25HR6

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes