IPG20N10S4L35ATMA1

Mfr. #:: IPG20N10S4L35ATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: IPG20N10S4L35ATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IPG20N10S4L35ATMA1 Datasheet IPG20N10S4L35ATMA1 Datasheet (P4-P6)IPG20N10S4L35ATMA1 Datasheet (P7-P9)
ECAD Model:
More Information:: IPG20N10S4L35ATMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TDSON-8

Number of Channels:: 2 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 20 A

Rds On - Drain-Source Resistance:: 29 mOhms, 29 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.1 V

Vgs - Gate-Source Voltage:: 16 V

Qg - Gate Charge:: 17.4 nC, 17.4 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 43 W

Configuration:: Dual

Channel Mode:: Enhancement

Qualification:: AEC-Q101

Packaging:: Reel

Height:: 1.27 mm

Length:: 5.9 mm

Series:: IPG20N10

Transistor Type:: 2 N-Channel

Width:: 5.15 mm

Brand:: Infineon Technologies

Fall Time:: 13 ns, 13 ns

Product Type:: MOSFET

Rise Time:: 2 ns, 2 ns

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 18 ns, 18 ns

Typical Turn-On Delay Time:: 3 ns, 3 ns

Part # Aliases:: IPG20N10S4L-35 IPG2N1S4L35XT SP000859022

Tags: IPG20N10S4L, IPG20N1, IPG20, IPG2, IPG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPG20N10S4L35ATMA1 Description

***ical: Trans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R

***et Europe: Trans MOSFET N-CH 100V 20A 8-Pin TDSON EP T/R

***ronik: Dual N-CH 100V 20A 29mOhm

***i-Key: MOSFET 2N-CH 8TDSON

***ark: Mosfet, Aec-Q101, Dual N-Ch, Tdson-8; Transistor Polarity:dual N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.029Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Powerrohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, AEC-Q101, DUAL N-CH, TDSON-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.029ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:43W; Transistor Case Style:TDSON; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T2 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, AEC-Q101, DOPPIO CA-N TDSON-8; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:20A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.029ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.6V; Dissipazione di Potenza Pd:43W; Modello Case Transistor:TDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS T2 Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: Summary of Features: Dual N-channel Logic Level - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: Dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction.; Bond wire is 200um for up to 20A current; Larger source lead frame connection for wire bonding; Package: PG-TDSON-8-4; Same thermal and electrical performance as a DPAK with the same die size.; Exposed pad provides excellent thermal transfer (varies by die size); Two N-Channel MOSFETs in one package with 2 isolated leadframes | Target Applications: Direct Fuel Injection; Solenoid control; LED and Body lighting

IPG20N10S4L35ATMA1 More Information

Wireless Charging Solutions: Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.

Inductive Wireless Charging – In-Car Charging: Infineon Technologies Inductive Wireless Charging – In-Car Charging allows for placing devices in a designated area to charge without a wired connection. Automotive inductive wireless charging is growing in the latest generation of cars. In fact, it’s predicted that most cars will have the feature in the very near future.

75V to 100V N-Channel Automotive MOSFETs: Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8), TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.

Market price

Part #	Mfg.	Description	Stock	Price
IPG20N10S4L35ATMA1 DISTI # V72:2272_06384586	Infineon Technologies AG	Trans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	4940	75000:$0.4293 30000:$0.4368 15000:$0.4443 6000:$0.4518 3000:$0.4593 1000:$0.4649 500:$0.6019 250:$0.6225 100:$0.6916 50:$0.7265 25:$0.8073 10:$0.9867 1:$1.1543
IPG20N10S4L35ATMA1 DISTI # IPG20N10S4L35ATMA1CT-ND	Infineon Technologies AG	MOSFET 2N-CH 8TDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	14887In Stock	1000:$0.5237 500:$0.6633 100:$0.8029 10:$1.0300 1:$1.1500
IPG20N10S4L35ATMA1 DISTI # IPG20N10S4L35ATMA1DKR-ND	Infineon Technologies AG	MOSFET 2N-CH 8TDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	14887In Stock	1000:$0.5237 500:$0.6633 100:$0.8029 10:$1.0300 1:$1.1500
IPG20N10S4L35ATMA1 DISTI # IPG20N10S4L35ATMA1TR-ND	Infineon Technologies AG	MOSFET 2N-CH 8TDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	10000In Stock	10000:$0.4338 5000:$0.4508
IPG20N10S4L35ATMA1 DISTI # 31948918	Infineon Technologies AG	Trans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	4940	16:$1.1543
IPG20N10S4L35ATMA1 DISTI # IPG20N10S4L35ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 20A 8-Pin TDSON EP T/R - Tape and Reel (Alt: IPG20N10S4L35ATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.4099 30000:$0.4169 20000:$0.4319 10000:$0.4479 5000:$0.4649
IPG20N10S4L35ATMA1 DISTI # IPG20N10S4L-35	Infineon Technologies AG	Trans MOSFET N-CH 100V 20A 8-Pin TDSON EP T/R (Alt: IPG20N10S4L-35) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Asia - 0
IPG20N10S4L35ATMA1 DISTI # SP000859022	Infineon Technologies AG	Trans MOSFET N-CH 100V 20A 8-Pin TDSON EP T/R (Alt: SP000859022) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	50000:€0.4099 30000:€0.4369 20000:€0.4799 10000:€0.5369 5000:€0.6889
IPG20N10S4L35ATMA1 DISTI # 13AC9060	Infineon Technologies AG	MOSFET, AEC-Q101, DUAL N-CH, TDSON-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.029ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,PowerRoHS Compliant: Yes	4436	1000:$0.4900 500:$0.6200 250:$0.6610 100:$0.7020 50:$0.7720 25:$0.8430 10:$0.9130 1:$1.0700
IPG20N10S4L-35 DISTI # 726-IPG20N10S4L-35	Infineon Technologies AG	MOSFET MOSFET RoHS: Compliant	20191	1:$1.0600 10:$0.9040 100:$0.6950 500:$0.6140 1000:$0.4850 5000:$0.4300 10000:$0.4140
IPG20N10S4L35ATMA1 DISTI # 726-IPG20N10S4L35ATM	Infineon Technologies AG	MOSFET MOSFET RoHS: Compliant	27007	1:$1.0600 10:$0.9040 100:$0.6950 500:$0.6140 1000:$0.4850 5000:$0.4300 10000:$0.4140
IPG20N10S4L35ATMA1	Infineon Technologies AG		25000
IPG20N10S4L35ATMA1 DISTI # 2725858	Infineon Technologies AG	MOSFET, AEC-Q101, DUAL N-CH, TDSON-8	4366	500:£0.4450 250:£0.4750 100:£0.5040 10:£0.6550 1:£0.7690
IPG20N10S4L35ATMA1 DISTI # 2725858	Infineon Technologies AG	MOSFET, AEC-Q101, DUAL N-CH, TDSON-8 RoHS: Compliant	4436	1000:$0.7900 500:$1.0000 100:$1.2100 5:$1.5600

Related products

Image	Part #	Description
	Mfr.#: ADA4096-2ARMZ OMO.#: OMO-ADA4096-2ARMZ	Precision Amplifiers 30V Micropower OVP RRIO Dual
	Mfr.#: INA196AQDBVRQ1 OMO.#: OMO-INA196AQDBVRQ1	Current & Power Monitors & Regulators Auto Cat Common- Mode Range Mon
	Mfr.#: LTC2945HMS#PBF OMO.#: OMO-LTC2945HMS-PBF	Current & Power Monitors & Regulators Wide Rng I2C Pwr Mon
	Mfr.#: FM25VN10-G OMO.#: OMO-FM25VN10-G	F-RAM 1M (128Kx8) 2.0-3.6V F-RAM
	Mfr.#: SN65HVD235QDRQ1 OMO.#: OMO-SN65HVD235QDRQ1	CAN Interface IC 3.3V CAN TRANSCEIVER WITH 36V STANDOFF
	Mfr.#: NVMFS5C604NLAFT1G OMO.#: OMO-NVMFS5C604NLAFT1G	MOSFET T6 60V HEFET
	Mfr.#: SHV05-1A85-78D4K OMO.#: OMO-SHV05-1A85-78D4K	Reed Relays REED RELAY SPST 1A 5V
	Mfr.#: ADA4096-2ARMZ OMO.#: OMO-ADA4096-2ARMZ-ANALOG-DEVICES-INC-ADI	Precision Amplifiers 30V Micropower OVP RRIO Dual
	Mfr.#: INA196AQDBVRQ1 OMO.#: OMO-INA196AQDBVRQ1-TEXAS-INSTRUMENTS	New and Original
	Mfr.#: FM25VN10-G OMO.#: OMO-FM25VN10-G-CYPRESS-SEMICONDUCTOR	F-RAM 1M (128Kx8) 2.0-3.6V F-RAM

Availability

Stock:: 27
On Order:: 2010
Enter Quantity:

Current price of IPG20N10S4L35ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.06~~; ~~$1.06~~

10: ~~$0.90~~; ~~$9.04~~

100: ~~$0.70~~; ~~$69.50~~

500: ~~$0.61~~; ~~$307.00~~

1000: ~~$0.48~~; ~~$485.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

IPG20N10S4L 8
IPG20N1 10
IPG20 79
IPG2 80
IPG 123

Newest Products

HEXFET® Power MOSFET Photovoltaic Relay

Infineon Technologies’ HEXFET MOSFET output switch, driven by an integrated circuit photovoltaic generator of novel construction.
M-SERIES (M5, M8, and M12) Metal Shell Circular Co

NorComp offers their line of metal shell circular connectors featuring a rugged, IP67/68 waterproof design for demanding end-use applications.
Compare IPG20N10S4L35ATMA1

IPG20N10S4L22 vs IPG20N10S4L22A vs IPG20N10S4L35
Market Leading Energy Efficiency Technologies

Infineon's energy efficiency products are enormously important for future energy supplies in terms of both exploiting renewable and using energy efficiently.
XENSIV™ DPS368 Ultra-Small Waterproof Pressure Sen

Infineon’s XENSIV™ DPS368 ultra-small waterproof pressure sensor is capable of measuring both pressure and temperature.
OptiMOS 3 Devices

OptiMOS 3 devices from Infineon are intended for power conversion and power management applications that require high efficiency and power density.

More Newest Products

IPG20N10S4L35ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes