BSZ22DN20NS3GATMA1

BSZ22DN20NS3GATMA1
Mfr. #:
BSZ22DN20NS3GATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
BSZ22DN20NS3GATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
BSZ22DN20NS3GATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TSDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
7 A
Rds On - Drain-Source Resistance:
194 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
5.6 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
34 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.1 mm
Length:
3.3 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
3.3 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
3.5 S
Fall Time:
3 ns
Product Type:
MOSFET
Rise Time:
4 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
6 ns
Typical Turn-On Delay Time:
4 ns
Part # Aliases:
BSZ22DN20NS3 BSZ22DN2NS3GXT G SP000781794
Unit Weight:
0.001277 oz
Tags
BSZ22, BSZ2, BSZ
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 20, N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON Infineon BSZ22DN20NS3GATMA1
***p One Stop Global
Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP
***ical
Trans MOSFET N-CH 200V 7A 8-Pin TSDSON
***ark
MOSFET, N CH, 200V, 7A, TSDSON-8
***i-Key
MOSFET N-CH 200V 7A 8TDSON
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 200V, 7A, TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.194ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:34W; Transistor Case Style:TSDSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 200V, 7A, TSDSON-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:7A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.194ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:34W; Modello Case Transistor:TSDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineon's 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS compliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS); LED lighting power supply
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Resonant Wireless Charging - Consumer Applications
Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.
Part # Mfg. Description Stock Price
BSZ22DN20NS3GATMA1
DISTI # V36:1790_06384496
Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R
RoHS: Compliant
20000
  • 5000:$0.3973
BSZ22DN20NS3GATMA1
DISTI # V72:2272_06384496
Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R
RoHS: Compliant
664
  • 500:$0.5384
  • 250:$0.5510
  • 100:$0.6122
  • 25:$0.7147
  • 10:$0.8735
  • 1:$1.0134
BSZ22DN20NS3GATMA1
DISTI # BSZ22DN20NS3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 200V 7A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
9613In Stock
  • 1000:$0.4633
  • 500:$0.5869
  • 100:$0.7104
  • 10:$0.9110
  • 1:$1.0200
BSZ22DN20NS3GATMA1
DISTI # BSZ22DN20NS3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 200V 7A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
9613In Stock
  • 1000:$0.4633
  • 500:$0.5869
  • 100:$0.7104
  • 10:$0.9110
  • 1:$1.0200
BSZ22DN20NS3GATMA1
DISTI # BSZ22DN20NS3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 200V 7A 8TSDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 25000:$0.3799
  • 10000:$0.3839
  • 5000:$0.3988
BSZ22DN20NS3GATMA1
DISTI # 33128679
Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R
RoHS: Compliant
20000
  • 5000:$0.3973
BSZ22DN20NS3GATMA1
DISTI # 32736050
Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R
RoHS: Compliant
5000
  • 5000:$0.3501
BSZ22DN20NS3GATMA1
DISTI # 31984785
Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R
RoHS: Compliant
664
  • 16:$1.0134
BSZ22DN20NS3GATMA1
DISTI # BSZ22DN20NS3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP - Bulk (Alt: BSZ22DN20NS3GATMA1)
Min Qty: 962
Container: Bulk
Americas - 0
  • 9620:$0.3299
  • 4810:$0.3359
  • 2886:$0.3479
  • 1924:$0.3609
  • 962:$0.3739
BSZ22DN20NS3GATMA1
DISTI # BSZ22DN20NS3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ22DN20NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 50000:$0.3619
  • 30000:$0.3689
  • 20000:$0.3819
  • 10000:$0.3959
  • 5000:$0.4109
BSZ22DN20NS3GATMA1
DISTI # SP000781794
Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP (Alt: SP000781794)
RoHS: Compliant
Min Qty: 5000
Europe - 0
  • 50000:€0.3329
  • 30000:€0.3579
  • 20000:€0.3879
  • 10000:€0.4229
  • 5000:€0.5179
BSZ22DN20NS3GATMA1
DISTI # 85X4160
Infineon Technologies AGMOSFET Transistor, N Channel, 7 A, 200 V, 0.194 ohm, 10 V, 3 V RoHS Compliant: Yes0
    BSZ22DN20NS3 G
    DISTI # 726-BSZ22DN20NS3G
    Infineon Technologies AGMOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3
    RoHS: Compliant
    12720
    • 1:$0.9300
    • 10:$0.8000
    • 100:$0.6150
    • 500:$0.5430
    • 1000:$0.4290
    • 5000:$0.3800
    • 10000:$0.3660
    BSZ22DN20NS3GATMA1
    DISTI # 726-BSZ22DN20NS3GATM
    Infineon Technologies AGMOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3
    RoHS: Compliant
    218
    • 1:$0.9300
    • 10:$0.8000
    • 100:$0.6150
    • 500:$0.5430
    • 1000:$0.4290
    • 5000:$0.3800
    • 10000:$0.3660
    BSZ22DN20NS3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 7A I(D), 200V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant
    122641
    • 1000:$0.3400
    • 500:$0.3600
    • 100:$0.3800
    • 25:$0.3900
    • 1:$0.4200
    BSZ22DN20NS3GATMA1
    DISTI # 2443374
    Infineon Technologies AGMOSFET, N CH, 200V, 7A, TSDSON-8
    RoHS: Compliant
    0
    • 5000:$0.5850
    • 1000:$0.6600
    • 500:$0.8350
    • 100:$0.9460
    • 10:$1.2400
    • 1:$1.4300
    BSZ22DN20NS3GATMA1
    DISTI # 2443374RL
    Infineon Technologies AGMOSFET, N CH, 200V, 7A, TSDSON-8
    RoHS: Compliant
    0
    • 5000:$0.5850
    • 1000:$0.6600
    • 500:$0.8350
    • 100:$0.9460
    • 10:$1.2400
    • 1:$1.4300
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    Availability
    Stock:
    Available
    On Order:
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    Current price of BSZ22DN20NS3GATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.93
    $0.93
    10
    $0.80
    $8.00
    100
    $0.62
    $61.50
    500
    $0.54
    $271.50
    1000
    $0.43
    $429.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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