NTP18N06

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

N

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

15 A

Rds On - Drain-Source Resistance:

90 mOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

48.4 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

9.28 mm

Length:

10.28 mm

Transistor Type:

1 N-Channel

Type:

MOSFET

Width:

4.82 mm

Brand:

ON Semiconductor

Forward Transconductance - Min:

6.8 S

Fall Time:

13 ns

Product Type:

MOSFET

Rise Time:

25 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

14 ns

Typical Turn-On Delay Time:

10 ns

Unit Weight:

0.211644 oz

Tags

NTP18N, NTP18, NTP1, NTP