IRF1405ZSTRLPBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

55 V

Id - Continuous Drain Current:

150 A

Rds On - Drain-Source Resistance:

4.9 mOhms

Vgs th - Gate-Source Threshold Voltage:

4 V

Qg - Gate Charge:

180 nC

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

230 W

Configuration:

Single

Packaging:

Reel

Height:

4.4 mm

Length:

10 mm

Transistor Type:

1 N-Channel

Width:

9.25 mm

Brand:

Infineon / IR

Forward Transconductance - Min:

88 S

Fall Time:

82 ns

Product Type:

MOSFET

Rise Time:

110 ns

Factory Pack Quantity:

800

Subcategory:

MOSFETs

Part # Aliases:

SP001563116

Unit Weight:

0.139332 oz

Tags

IRF1405ZSTRL, IRF1405ZST, IRF1405ZS, IRF1405Z, IRF1405, IRF140, IRF14, IRF1, IRF