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SCT3160KLGC11

SCT3160KLGC11
Mfr. #:
SCT3160KLGC11
Manufacturer:
Rohm Semiconductor
Description:
MOSFET N-Ch 1200V SiC 17A 160mOhm TrenchMOS
Lifecycle:
New from this manufacturer.
Datasheet:
SCT3160KLGC11 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SCT3160KLGC11 more Information
Product Attribute
Attribute Value
Manufacturer:
ROHM Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
SiC
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
1200 V
Id - Continuous Drain Current:
17 A
Rds On - Drain-Source Resistance:
160 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.7 V
Vgs - Gate-Source Voltage:
- 4 V, 22 V
Qg - Gate Charge:
42 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
103 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Series:
SCT3x
Transistor Type:
1 N-Channel
Brand:
ROHM Semiconductor
Forward Transconductance - Min:
2.5 S
Fall Time:
25 ns
Product Type:
MOSFET
Rise Time:
18 ns
Factory Pack Quantity:
450
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
24 ns
Typical Turn-On Delay Time:
14 ns
Part # Aliases:
SCT3160KL
Unit Weight:
0.211644 oz
Tags
SCT316, SCT31, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
N-Channel Silicon Carbide Power Mosfet 1200V/17A Rohs Compliant: Yes
***ure Electronics
SCT3160KL Series 1200 V 17 A 208 mOhm N-Channel SiC Power Mosfet - TO-247N
***ical
Trans MOSFET N-CH SiC 1.2KV 17A 3-Pin(3+Tab) TO-247N Tube
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SCT3x 3rd Generation SiC Trench MOSFETs
ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
Industrial Product Solutions
ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.
Part # Mfg. Description Stock Price
SCT3160KLGC11
DISTI # V99:2348_18340123		ROHM SemiconductorSCT3160KLGC110
  • 1:$6.3047
SCT3160KLGC11
DISTI # SCT3160KLGC11-ND		ROHM SemiconductorMOSFET NCH 1.2KV 17A TO247N
RoHS: Compliant
Min Qty: 1
Container: Tube		900In Stock
  • 510:$6.6340
  • 120:$7.6184
  • 30:$8.7740
  • 10:$9.2020
  • 1:$10.1900
SCT3160KLGC11
DISTI # SCT3160KLGC11		ROHM SemiconductorROHSCT3160KLGC11 - Rail/Tube (Alt: SCT3160KLGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$5.3900
  • 2250:$5.5900
  • 1350:$5.8900
  • 900:$6.2900
  • 450:$6.6900
SCT3160KLGC11
DISTI # SCT3160KLGC11		ROHM SemiconductorROHSCT3160KLGC11 (Alt: SCT3160KLGC11)
RoHS: Compliant
Min Qty: 450		Asia - 0
    SCT3160KLGC11
    DISTI # SCT3160KLGC11    		ROHM SemiconductorROHSCT3160KLGC11 (Alt: SCT3160KLGC11)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 250:€4.8300
    • 100:€5.0500
    • 50:€5.1100
    • 10:€5.1600
    • 5:€5.4700
    • 1:€6.0500
    SCT3160KLGC11
    DISTI # 05AC9467    		ROHM SemiconductorMOSFET, N-CH, 1.2KV, 17A, TO-247N-3,Transistor Polarity:N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V RoHS Compliant: Yes20
    • 250:$8.0700
    • 100:$8.4600
    • 50:$9.1000
    • 25:$9.7500
    • 10:$10.2200
    • 1:$11.3100
    SCT3160KLGC11.
    DISTI # 32AC3230    		ROHM SemiconductorN-CHANNEL SILICON CARBIDE POWER MOSFET 1200V/17A ROHS COMPLIANT: YES550
    • 250:$8.0700
    • 100:$8.4600
    • 50:$9.1000
    • 25:$9.7500
    • 10:$10.4300
    • 1:$11.5400
    SCT3160KLGC11
    DISTI # 755-SCT3160KLGC11    		ROHM SemiconductorMOSFET N-Ch 1200V SiC 17A 160mOhm TrenchMOS
    RoHS: Compliant    		0
    • 1:$10.1800
    • 10:$9.2000
    • 25:$8.7700
    • 100:$7.6100
    • 250:$7.2700
    SCT3160KLGC11
    DISTI # 1501496    		ROHM SemiconductorMOSFET N-CHANNEL 17A 1200V SIC TO-247, EA3
    • 50:£4.8400
    • 12:£4.9400
    • 6:£5.1300
    • 3:£5.2700
    • 1:£5.5000
    SCT3160KLGC11ROHM Semiconductor 76
    • 25:$9.7125
    • 8:$10.5000
    • 1:$11.8125
    SCT3160KLGC11
    DISTI # SCT3160KLGC11    		ROHM SemiconductorSiC-N-Ch 1200V 17A 103W 0,208R TO247
    RoHS: Compliant    		317
    • 1:€8.9500
    • 5:€8.0500
    • 10:€7.6000
    • 30:€7.3500
    SCT3160KLGC11
    DISTI # TMOS1921    		ROHM SemiconductorSiC-N 1200V 160mOhm 17A TO247
    RoHS: Compliant    		Stock DE - 0Stock HK - 0Stock US - 0
    • 450:$7.4800
    SCT3160KLGC11ROHM SemiconductorRoHS(ship within 1day)95
    • 1:$7.5600
    • 10:$6.4200
    • 50:$5.6700
    • 100:$5.4400
    • 500:$5.3700
    • 1000:$5.2500
    SCT3160KLGC11ROHM SemiconductorSCT3160KL Series 1200 V 17 A 208 mOhm N-Channel SiC Power Mosfet - TO-247N11199
    • 1:¥73.0000
    • 100:¥46.5000
    • 450:¥36.0000
    SCT3160KLGC11
    DISTI # 2678788    		ROHM SemiconductorMOSFET, N-CH, 1.2KV, 17A, TO-247N
    RoHS: Compliant    		138
    • 120:$11.4000
    • 30:$13.1300
    • 10:$13.7700
    • 1:$15.2400
    SCT3160KLGC11
    DISTI # 2678788    		ROHM SemiconductorMOSFET, N-CH, 1.2KV, 17A, TO-247N140
    • 100:£6.2500
    • 50:£6.6300
    • 10:£7.0100
    • 5:£8.3500
    • 1:£8.9400
    SCT3160KLGC11ROHM SemiconductorMOSFET N-Ch 1200V SiC 17A 160mOhm TrenchMOS
    RoHS: Compliant    		Americas - 450
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      Availability
      Stock:
      Available
      On Order:
      5000
      Enter Quantity:
      Current price of SCT3160KLGC11 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $10.18
      $10.18
      10
      $9.20
      $92.00
      25
      $8.77
      $219.25
      100
      $7.61
      $761.00
      250
      $7.27
      $1 817.50
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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