IPD30N10S3L34ATMA1

IPD30N10S3L34ATMA1
Mfr. #:
IPD30N10S3L34ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
Lifecycle:
New from this manufacturer.
Datasheet:
IPD30N10S3L34ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPD30N10S3L34ATMA1 DatasheetIPD30N10S3L34ATMA1 Datasheet (P4-P6)IPD30N10S3L34ATMA1 Datasheet (P7-P9)
ECAD Model:
More Information:
IPD30N10S3L34ATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PG-TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
30 A
Rds On - Drain-Source Resistance:
31 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.2 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
24 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
57 W
Configuration:
Single
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Series:
XPD30N10
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Infineon Technologies
Fall Time:
3 ns
Product Type:
MOSFET
Rise Time:
4 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
18 ns
Typical Turn-On Delay Time:
6 ns
Part # Aliases:
IPD30N10S3L-34 IPD3N1S3L34XT SP000261248
Unit Weight:
0.139332 oz
Tags
IPD30N10, IPD30N1, IPD30N, IPD30, IPD3, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 2500, N-Channel MOSFET, 30 A, 100 V, 3-Pin DPAK Infineon IPD30N10S3L34ATMA1
***ark
MOSFET Transistor, N Channel, 30 A, 100 V, 0.0258 ohm, 10 V, 1.7 V
***ure Electronics
Single N-Channel 100 V 31 mOhm 31 nC OptiMOS™ Power Mosfet - TO-252-3
***p One Stop Japan
Trans MOSFET N-CH 100V 30A Automotive 3-Pin(2+Tab) DPAK T/R
***ical
Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-252
***et Europe
Trans MOSFET N-CH 100V 30A 3-Pin TO-252 T/R
***i-Key
MOSFET N-CH 100V 30A TO252-3
***ronik
N-CH 100V 30A 31mOhm TO252-3
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 100V, 30A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0258ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:57W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting
***nell
MOSFET, CANALE N, 100V, 30A, TO-252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:30A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0258ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:57W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
Part # Mfg. Description Stock Price
IPD30N10S3L34ATMA1
DISTI # V72:2272_06390917
Infineon Technologies AGTrans MOSFET N-CH 100V 30A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2500
  • 75000:$0.3688
  • 30000:$0.3726
  • 15000:$0.3766
  • 6000:$0.3805
  • 3000:$0.3844
  • 1000:$0.3882
  • 500:$0.4915
  • 250:$0.5622
  • 100:$0.5734
  • 50:$0.6639
  • 25:$0.7376
  • 10:$0.8189
  • 1:$0.9480
IPD30N10S3L34ATMA1
DISTI # IPD30N10S3L34ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 100V 30A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
28373In Stock
  • 1000:$0.4344
  • 500:$0.5503
  • 100:$0.6661
  • 10:$0.8540
  • 1:$0.9600
IPD30N10S3L34ATMA1
DISTI # IPD30N10S3L34ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 100V 30A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
28373In Stock
  • 1000:$0.4344
  • 500:$0.5503
  • 100:$0.6661
  • 10:$0.8540
  • 1:$0.9600
IPD30N10S3L34ATMA1
DISTI # IPD30N10S3L34ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 30A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
27500In Stock
  • 25000:$0.3562
  • 12500:$0.3599
  • 5000:$0.3740
  • 2500:$0.3937
IPD30N10S3L34ATMA1
DISTI # 33119879
Infineon Technologies AGTrans MOSFET N-CH 100V 30A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2500
  • 15000:$0.3766
  • 6000:$0.3805
  • 3000:$0.3844
  • 1000:$0.3882
  • 500:$0.4915
  • 250:$0.5622
  • 100:$0.5734
  • 50:$0.6639
  • 25:$0.7376
  • 17:$0.8189
IPD30N10S3L34ATMA1
DISTI # SP000261248
Infineon Technologies AGTrans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-252 (Alt: SP000261248)
RoHS: Compliant
Min Qty: 2500
Europe - 26500
  • 25000:€0.3879
  • 15000:€0.4179
  • 10000:€0.4649
  • 5000:€0.5219
  • 2500:€0.6159
IPD30N10S3L34ATMA1
DISTI # IPD30N10S3L34ATMA1
Infineon Technologies AGTrans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD30N10S3L34ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.3399
  • 15000:$0.3459
  • 10000:$0.3579
  • 5000:$0.3709
  • 2500:$0.3849
IPD30N10S3L34ATMA1
DISTI # 79X1436
Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, TO-252- 3,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0258ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes8676
  • 1000:$0.4060
  • 500:$0.5140
  • 250:$0.5480
  • 100:$0.5820
  • 50:$0.6400
  • 25:$0.6990
  • 10:$0.7580
  • 1:$0.8790
IPD30N10S3L-34
DISTI # 726-IPD30N10S3L34
Infineon Technologies AGMOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
RoHS: Compliant
52091
  • 1:$0.8700
  • 10:$0.7500
  • 100:$0.5760
  • 500:$0.5090
  • 1000:$0.4020
  • 2500:$0.3570
  • 10000:$0.3430
IPD30N10S3L34ATMA1
DISTI # 726-IPD30N10S3L34ATM
Infineon Technologies AGMOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
RoHS: Compliant
23984
  • 1:$0.8700
  • 10:$0.7500
  • 100:$0.5760
  • 500:$0.5090
  • 1000:$0.4020
  • 2500:$0.3570
  • 10000:$0.3430
IPD30N10S3L34ATMA1
DISTI # 7533018
Infineon Technologies AGMOSFET N-CH 100V 30A OPTIMOS-T TO252, PK890
  • 1250:£0.2870
  • 630:£0.3190
  • 130:£0.3640
  • 30:£0.4640
  • 10:£0.6060
IPD30N10S3L34ATMA1
DISTI # 7533018P
Infineon Technologies AGMOSFET N-CH 100V 30A OPTIMOS-T TO252, RL10090
  • 1250:£0.2870
  • 630:£0.3190
  • 130:£0.3640
  • 30:£0.4640
IPD30N10S3L34ATMA1
DISTI # 2432729
Infineon Technologies AGMOSFET, N CH, 100V, 30A, TO-252-37787
  • 500:£0.3700
  • 250:£0.3930
  • 100:£0.4170
  • 25:£0.5470
  • 5:£0.6410
IPD30N10S3L34ATMA1
DISTI # 2432729RL
Infineon Technologies AGMOSFET, N CH, 100V, 30A, TO-252-3
RoHS: Compliant
0
  • 2500:$0.5490
  • 1000:$0.6190
  • 500:$0.7830
  • 100:$0.8860
  • 10:$1.1600
  • 1:$1.3400
IPD30N10S3L34ATMA1
DISTI # 2432729
Infineon Technologies AGMOSFET, N CH, 100V, 30A, TO-252-3
RoHS: Compliant
8282
  • 2500:$0.5490
  • 1000:$0.6190
  • 500:$0.7830
  • 100:$0.8860
  • 10:$1.1600
  • 1:$1.3400
IPD30N10S3L34ATMA1
DISTI # XSKDRABS0030196
Infineon Technologies AG 
RoHS: Compliant
7500 in Stock0 on Order
  • 7500:$0.4745
  • 2500:$0.5084
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Mfr.#: SBC847CLT1G

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Availability
Stock:
26
On Order:
2009
Enter Quantity:
Current price of IPD30N10S3L34ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.87
$0.87
10
$0.75
$7.50
100
$0.58
$57.60
500
$0.51
$254.50
1000
$0.40
$402.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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