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TGF2023-2-10

TGF2023-2-10
Mfr. #:
TGF2023-2-10
Manufacturer:
Qorvo
Description:
RF JFET Transistors DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB
Lifecycle:
New from this manufacturer.
Datasheet:
TGF2023-2-10 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TGF2023-2-10 more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN SiC
Gain:
18 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
36 V
Vgs - Gate-Source Breakdown Voltage:
145 V
Id - Continuous Drain Current:
24 A
Output Power:
260 W
Maximum Drain Gate Voltage:
48 V
Maximum Operating Temperature:
+ 250 C
Pd - Power Dissipation:
288 W
Mounting Style:
SMD/SMT
Packaging:
Tray
Configuration:
Single
Operating Frequency:
2 GHz
Product:
RF Power Transistor
Series:
T1G
Type:
GaN SiC HEMT
Brand:
Qorvo
Moisture Sensitive:
Yes
Product Type:
RF JFET Transistors
Factory Pack Quantity:
25
Subcategory:
Transistors
Part # Aliases:
1110346
Tags
TGF2023-2, TGF2023, TGF202, TGF20, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, 0 to 18 GHz, 50 W, 11.5 dB, 28 V, DIE, GaN
***horized Procurement Solutions
OEMs, CMs ONLY (NO BROKERS)
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
TGF2023 GaN HEMT Transistors
Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm GaN on SiC HEMT which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. These devices typically provide between 38-50.5dBm of saturated output power with power gain from 17.5dB and up to 21db at 3GHz. The maximum power added efficiency is between 52-78.3% which makes the these devices appropriate for high efficiency applications.Learn More
Part # Mfg. Description Stock Price
TGF2023-2-10
DISTI # 772-TGF2023-2-10		QorvoRF JFET Transistors DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB
RoHS: Compliant		0
  • 50:$71.5800
  • 100:$63.2500
1099951
DISTI # TGF2023-2-10		QorvoRF POWER TRANSISTOR
RoHS: Compliant		0
  • 1:$59.3200
Image Part # Description
TGF2023-2-05

Mfr.#: TGF2023-2-05

OMO.#: OMO-TGF2023-2-05

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TGF2023-2-05

Mfr.#: TGF2023-2-05

OMO.#: OMO-TGF2023-2-05-318

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TGF2022-48

Mfr.#: TGF2022-48

OMO.#: OMO-TGF2022-48-318

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Mfr.#: TGF2023-2-20

OMO.#: OMO-TGF2023-2-20-318

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TGF2023-2-02

Mfr.#: TGF2023-2-02

OMO.#: OMO-TGF2023-2-02-318

 RF JFET Transistors DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
TGF2021-04-SD-T/R

Mfr.#: TGF2021-04-SD-T/R

OMO.#: OMO-TGF2021-04-SD-T-R-1190

 New and Original
TGF2021-08-SG

Mfr.#: TGF2021-08-SG

OMO.#: OMO-TGF2021-08-SG-1152

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TGF202104SD

Mfr.#: TGF202104SD

OMO.#: OMO-TGF202104SD-1190

 New and Original
TGF2023-05

Mfr.#: TGF2023-05

OMO.#: OMO-TGF2023-05-1152

 RF JFET Transistors 5.0mm GaN Discrete
Availability
Stock:
200
On Order:
2183
Enter Quantity:
Current price of TGF2023-2-10 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
50
$71.58
$3 579.00
100
$63.25
$6 325.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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