IRLU2905PBF

Mfr. #:: IRLU2905PBF
Manufacturer:: Infineon / IR
Description:: MOSFET PLANAR_MOSFETS
Lifecycle:: New from this manufacturer.
Datasheet:: IRLU2905PBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IRLU2905PBF more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-251-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 55 V

Id - Continuous Drain Current:: 36 A

Rds On - Drain-Source Resistance:: 40 mOhms

Vgs - Gate-Source Voltage:: 16 V

Qg - Gate Charge:: 32 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 69 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Height:: 6.22 mm

Length:: 6.73 mm

Transistor Type:: 1 N-Channel

Type:: HEXFET Power MOSFET

Width:: 2.38 mm

Brand:: Infineon / IR

Fall Time:: 15 ns

Product Type:: MOSFET

Rise Time:: 84 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 26 ns

Typical Turn-On Delay Time:: 11 ns

Part # Aliases:: SP001577178

Tags: IRLU2905, IRLU29, IRLU2, IRLU, IRL

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRLU2905PBF Description

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.027Ohm;ID 42A;I-Pak (TO-251AA);PD 110W

***ure Electronics: Single N-Channel 55 V 27 mOhm 32 nC HEXFET® Power Mosfet - IPAK

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:42A; On Resistance Rds(On):0.027Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; No. Of Pins:3Pinsrohs Compliant: Yes

***nell: MOSFET, N, 55V, 36A, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:42A; Resistance, Rds On:0.027ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:I-PAK; Current, Idm Pulse:160A; Power Dissipation:110W; Power, Pd:110W; Resistance, Rds on @ Vgs = 10V:0.027ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:1.8°C/W; Voltage, Vds:55V; Voltage, Vds Max:55V; Voltage, Vgs th Max:2V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.022Ohm;ID 47A;TO-220AB;PD 110W;VGS +/-16V

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***ure Electronics: Single N-Channel 55 V 0.035 Ohm 48 nC HEXFET® Power Mosfet - TO-220-3

***Yang: Trans MOSFET N-CH 55V 47A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 110 W

***roFlash: Power Field-Effect Transistor, 47A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***ment14 APAC: MOSFET, N, 55V, 41A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:55V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:83W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:47A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.8°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:83W; Power Dissipation Pd:83W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

***ineon SCT: Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 55V 51A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube

***(Formerly Allied Electronics): MOSFET N-Channel 55V 51A HEXFET TO220AB

***ineon: Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified

***nell: MOSFET,N CH,55V,51A,TO220AB; Continuous Drain Current Id:51A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0111ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:80W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:80W; Voltage Vgs Max:20V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.022Ohm;ID 30A;TO-220 Full-Pak;PD 45W;-55de

***ure Electronics: Single N-Channel 55 V 0.025 Ohm 48 nC HEXFET® Power Mosfet - TO-220-3FP

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS

***et: Trans MOSFET N-CH 55V 30A 3-Pin(3+Tab) TO-220 Full-Pack

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 45 W

***icontronic: Power Field-Effect Transistor, 30A I(D), 55V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***ment14 APAC: MOSFET, N, LOGIC, FULLPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:55V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:38W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2kV; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Pd:38W; Power Dissipation Pd:38W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

***emi: Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 52.4 A, 21 mΩ, TO-220

***Yang: Trans MOSFET N-CH 60V 52.4A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***ure Electronics: N-Channel 60 V 0.022 Ohm Flange Mount Mosfet - TO-220

*** Stop Electro: Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:52.4A; Drain Source Voltage Vds:60V; On Resistance Rds(on):17mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:121W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:52A; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-220; Power Dissipation Pd:121W; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***ure Electronics: Single N-Channel 60 V 0.05 Ohms Flange Mount Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 60V 30A 3-Pin(3+Tab) TO-220AB

***ment14 APAC: N CHANNEL MOSFET, 60V, 30A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Current Id:30A; Transistor

***SIT Distribution GmbH: Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N, 60V, 30A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 88W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 30A; Junction to Case Thermal Resistance A: 1.7°C/W; Operating Temperature Min: -55°C; Pulse Current Idm: 110A; Voltage Vds Typ: 60V; Voltage Vgs Max: 10V; Voltage Vgs Rds on Measurement: 5V; Voltage Vgs th Max: 2V

***emi: Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 32 A, 35 mΩ, TO-220

***ment14 APAC: N CHANNEL MOSFET, 60V, 32A, TO-220; Tran; Transistor Polarity:N Channel; Continuous Drain Current Id:32A;

***ical: Trans MOSFET N-CH 60V 32A 3-Pin (3+Tab) TO-220AB Rail

***ure Electronics: N-Channel 60 V 40 mOhm Flange Mount Mosfet - TO-220

***r Electronics: Power Field-Effect Transistor, 32A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications..

IRLU2905PBF More Information

IRLR/U2905 HEXFET® Power MOSFET: Infineon IRLR/U2905 HEXFET® Power MOSFET is a fifth generation HEXFET that uses advanced processing techniques. This achieves the lowest possible on-resistance per silicon area. Fast switching speed and ruggedized device design provides an extremely efficient device. The MOSFET is for use in a wide variety of applications.

Market price

Part #	Mfg.	Description	Stock	Price
IRLU2905PBF DISTI # 30214163	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 42A 3-Pin(3+Tab) IPAK Tube	1540	20:$0.4843
IRLU2905PBF DISTI # IRLU2905PBF-ND	Infineon Technologies AG	MOSFET N-CH 55V 42A I-PAK RoHS: Compliant Min Qty: 3000 Container: Tube	Temporarily Out of Stock	3000:$0.7143
IRLU2905PBF DISTI # C1S322000588455	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 42A 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	1550	1000:$0.8030 500:$0.8690 100:$0.9680 50:$1.1500 25:$1.2900 5:$1.7700
IRLU2905PBF DISTI # IRLU2905PBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 42A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRLU2905PBF) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 0	1:$0.5369 10:$0.5299 25:$0.5219 50:$0.5149 100:$0.4959 500:$0.4789 1000:$0.4709
IRLU2905PBF. DISTI # 32AC0780	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:42A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:110W,No. of Pins:3Pins RoHS Compliant: Yes	0
IRLU2905PBF DISTI # 70017625	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 55V,RDS(ON) 0.027Ohm,ID 42A,I-Pak (TO-251AA),PD 110W RoHS: Compliant	0	825:$0.6000
IRLU2905PBF	International Rectifier	Power Field-Effect Transistor, 20A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Compliant	75	1000:$0.6100 500:$0.6400 100:$0.6600 25:$0.6900 1:$0.7500
IRLU2905PBF DISTI # 942-IRLU2905PBF	Infineon Technologies AG	MOSFET PLANAR_MOSFETS RoHS: Compliant	958	1:$1.5300 10:$1.3000 100:$0.9980 500:$0.8820 1000:$0.6960 2500:$0.6170
IRLU2905PBF DISTI # IRLU2905PBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,55V,36A,69W,IPAK	83	1:$1.3860 3:$1.2878 10:$1.0422 75:$0.9033
IRLU2905PBF DISTI # 8651353	Infineon Technologies AG	MOSFET, N, 55V, 36A, I-PAK RoHS: Compliant	0	1:$2.2600 10:$1.8600 100:$1.5100 250:$1.3500 500:$1.2000 1000:$1.1100

Image	Part #	Description
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	Mfr.#: BTS740S2XUMA1 OMO.#: OMO-BTS740S2XUMA1	Power Switch ICs - Power Distribution SMART HI SIDE PWR SWITCH 2 CHANNELS
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	Mfr.#: ATMEGA328P-AU OMO.#: OMO-ATMEGA328P-AU	8-bit Microcontrollers - MCU 32KB In-system Flash 20MHz 1.8V-5.5V
	Mfr.#: L7805CD2T-TR OMO.#: OMO-L7805CD2T-TR	Linear Voltage Regulators 5.0V 1.0A Positive
	Mfr.#: IRLR2705TRLPBF OMO.#: OMO-IRLR2705TRLPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 55V 28A DPAK

IRLU2905PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes