IPD60R380C6ATMA1

Mfr. #:: IPD60R380C6ATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 600V 10.6A DPAK-2
Lifecycle:: New from this manufacturer.
Datasheet:: IPD60R380C6ATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 10.6 A

Rds On - Drain-Source Resistance:: 340 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.5 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 32 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 83 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: CoolMOS

Packaging:: Reel

Height:: 2.3 mm

Length:: 6.5 mm

Series:: CoolMOS C6

Transistor Type:: 1 N-Channel

Width:: 6.22 mm

Brand:: Infineon Technologies

Fall Time:: 9 ns

Product Type:: MOSFET

Rise Time:: 10 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 110 ns

Typical Turn-On Delay Time:: 15 ns

Part # Aliases:: IPD60R380C6 SP001117716

Unit Weight:: 0.139332 oz

Tags: IPD60R380C, IPD60R380, IPD60R38, IPD60R3, IPD60R, IPD60, IPD6, IPD

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

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IPD60R380C6ATMA1 Description

***ure Electronics: Single N-Channel 650 V 380 mOhm 32 nC CoolMOS Power Mosfet - TO-252-3

*** Stop Electro: Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS

***ment14 APAC: MOSFET,N CH,600V,10.6A,TO252; Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.34ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.6A; Power Dissipation Pd:83W; Voltage Vgs Max:30V

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***ical: Trans MOSFET N-CH 600V 9.1A 3-Pin(2+Tab) DPAK T/R

***i-Key Marketplace: COOLMOS N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***ical: Trans MOSFET N-CH 700V 10.6A Automotive 3-Pin(2+Tab) DPAK T/R

***nell: MOSFET, N-CH, 650V, 10.6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.6A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.34ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS E6 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

*** Stop Electro: Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon SCT: CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS

***ineon: CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

*** Source Electronics: Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R / CoolMOS Power Transistor

*** Stop Electro: Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ineon: CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

***ment14 APAC: MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:650V; On Resistance Rds(on):385mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:9A; Package / Case:TO-252; Power Dissipation Pd:83W; Pulse Current Idm:27A; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a DPAK package

***ark: MOSFET, N-CH, 600V, 11A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***nell: MOSFET, N-CH, 600V, 11A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.34ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***icroelectronics: N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a DPAK package

***r Electronics: Power Field-Effect Transistor, 13A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***enic: 500V 13A 240m´Î@10V6.5A 110W 3V@250uA 1.35pF@100V N Channel 710pF@100v 19.5nC@0~10V -55¡Í~+150¡Í@(Tj) TO-252-3 MOSFETs ROHS

***icroelectronics: N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package

***ark: Mosfet, N-Ch, 650V, 11A, To-252 Rohs Compliant: Yes

***el Electronic: Cap Ceramic 0.047uF 500V X7R 20% SMD 1812 125C Embossed T/R

***icroelectronics SCT: Power MOSFETs, 650V, 11A, DPAK, Tape and Reel

***enic: 650V 11A 320m´Î@10V5.5A 110W 3V@250uA 1.1pF@100V N Channel 718pF@100V 19.5nC@10V -55¡Í~+150¡Í@(Tj) DPAK MOSFETs ROHS

Market price

Part #	Mfg.	Description	Stock	Price
IPD60R380C6ATMA1 DISTI # V72:2272_06383823	Infineon Technologies AG	Trans MOSFET N-CH 600V 10.6A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	80	75000:$0.7690 30000:$0.8060 15000:$0.8430 6000:$0.8801 3000:$0.9171 1000:$0.9541 500:$0.9911 250:$1.0703 100:$1.0814 50:$1.2503 25:$1.3892 10:$1.4112 1:$1.8219
IPD60R380C6ATMA1 DISTI # IPD60R380C6ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V 10.6A TO252 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1844In Stock	1000:$0.9328 500:$1.1258 100:$1.3703 10:$1.7050 1:$1.9000
IPD60R380C6ATMA1 DISTI # IPD60R380C6ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V 10.6A TO252 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1844In Stock	1000:$0.9328 500:$1.1258 100:$1.3703 10:$1.7050 1:$1.9000
IPD60R380C6ATMA1 DISTI # IPD60R380C6ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V 10.6A TO252 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	12500:$0.7949 5000:$0.8119 2500:$0.8432
IPD60R380C6ATMA1 DISTI # 32874244	Infineon Technologies AG	Trans MOSFET N-CH 600V 10.6A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	80	8:$0.8634
IPD60R380C6ATMA1 DISTI # IPD60R380C6ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 600V 10.6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R380C6ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.7209 15000:$0.7339 10000:$0.7599 5000:$0.7879 2500:$0.8179
IPD60R380C6ATMA1 DISTI # SP001117716	Infineon Technologies AG	Trans MOSFET N-CH 600V 10.6A 3-Pin TO-252 T/R (Alt: SP001117716) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.7389 15000:€0.7889 10000:€0.8669 5000:€0.9699 2500:€1.2439
IPD60R380C6ATMA1 DISTI # 30T1835	Infineon Technologies AG	MOSFET, N CHANNEL, 650V, 10.6A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:10.6A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.34ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	0	1000:$0.8320 500:$1.0000 100:$1.1400 10:$1.4300 1:$1.6900
IPD60R380C6ATMA1 DISTI # 726-IPD60R380C6ATMA1	Infineon Technologies AG	MOSFET N-Ch 600V 10.6A DPAK-2 RoHS: Compliant	5525	1:$1.6700 10:$1.4200 100:$1.1300 500:$0.9940 1000:$0.8240
IPD60R380C6 DISTI # 726-IPD60R380C6	Infineon Technologies AG	MOSFET N-Ch 600V 10.6A DPAK-2 RoHS: Compliant	15	1:$1.6700 10:$1.4200 100:$1.1300 500:$0.9940 1000:$0.8240
IPD60R380C6ATMA1 DISTI # 7533011P	Infineon Technologies AG	MOSFET N-CH 600V 10.6A COOLMOS C6 TO252, RL	6156	1250:£0.5950 626:£0.6850 126:£0.7900 26:£0.9450
IPD60R380C6ATMA1 DISTI # 1860805	Infineon Technologies AG	MOSFET,N CH,600V,10.6A,TO252 RoHS: Compliant	5009	2500:$1.1900 1000:$1.2100 500:$1.4500 100:$1.6500 10:$2.0700 1:$2.5800
IPD60R380C6ATMA1 DISTI # 1860805	Infineon Technologies AG	MOSFET,N CH,600V,10.6A,TO252	5024	500:£0.7420 250:£0.7920 100:£0.8400 25:£1.0500 5:£1.1500

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IPD60R380C6ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes