SIZ900DT-T1-GE3

SIZ900DT-T1-GE3
Mfr. #:
SIZ900DT-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET 2N-CH 30V 24A POWERPAIR
Lifecycle:
New from this manufacturer.
Datasheet:
SIZ900DT-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZ900DT-T1-GE3 DatasheetSIZ900DT-T1-GE3 Datasheet (P4-P6)SIZ900DT-T1-GE3 Datasheet (P7-P9)SIZ900DT-T1-GE3 Datasheet (P10-P12)SIZ900DT-T1-GE3 Datasheet (P13-P14)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
Vishay Siliconix
Product Category
FETs - Arrays
Series
TrenchFETR
Packaging
Digi-ReelR Alternate Packaging
Part-Aliases
SIZ900DT-GE3
Mounting-Style
SMD/SMT
Package-Case
6-PowerPair
Technology
Si
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Surface Mount
Number-of-Channels
2 Channel
Supplier-Device-Package
6-PowerPair
Configuration
Dual Common Source
FET-Type
2 N-Channel (Half Bridge)
Power-Max
48W, 100W
Transistor-Type
2 N-Channel
Drain-to-Source-Voltage-Vdss
30V
Input-Capacitance-Ciss-Vds
1830pF @ 15V
FET-Feature
Logic Level Gate
Current-Continuous-Drain-Id-25°C
24A, 28A
Rds-On-Max-Id-Vgs
7.2 mOhm @ 19.4A, 10V
Vgs-th-Max-Id
2.4V @ 250μA
Gate-Charge-Qg-Vgs
45nC @ 10V
Pd-Power-Dissipation
48 W 100 W
Maximum-Operating-Temperature
+ 150 C
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
24 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistance
5.9 mOhms 3.2 mOhms
Transistor-Polarity
N-Channel
Tags
SIZ900DT, SIZ900, SIZ90, SIZ9, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
SIZ900DT-T1-GE3
DISTI # V72:2272_09215430
Vishay IntertechnologiesTrans MOSFET N-CH 30V 19A/28A 8-Pin PowerPAIR T/R
RoHS: Compliant
1355
  • 1000:$0.8356
  • 500:$0.9161
  • 250:$0.9235
  • 100:$1.0261
  • 25:$1.2502
  • 10:$1.2545
  • 1:$1.4462
SIZ900DT-T1-GE3
DISTI # SIZ900DT-T1-GE3CT-ND
Vishay SiliconixMOSFET 2N-CH 30V 24A POWERPAIR
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
109In Stock
  • 100:$1.4454
  • 10:$1.7990
  • 1:$1.9900
SIZ900DT-T1-GE3
DISTI # SIZ900DT-T1-GE3TR-ND
Vishay SiliconixMOSFET 2N-CH 30V 24A POWERPAIR
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
  • 3000:$0.8420
SIZ900DT-T1-GE3
DISTI # SIZ900DT-T1-GE3DKR-ND
Vishay SiliconixMOSFET 2N-CH 30V 24A POWERPAIR
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Limited Supply - Call
    SIZ900DT-T1-GE3
    DISTI # 27488534
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 19A/28A 8-Pin PowerPAIR T/R
    RoHS: Compliant
    1355
    • 1000:$0.8356
    • 500:$0.9161
    • 250:$0.9235
    • 100:$1.0261
    • 25:$1.2502
    • 10:$1.2545
    • 9:$1.4462
    SIZ900DT-T1-GE3
    DISTI # 91T5914
    Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 30V, 24A, POWERPAIR-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0059ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:48W, RoHS Compliant: Yes0
    • 1:$1.7700
    • 25:$1.4700
    • 50:$1.3100
    • 100:$1.1400
    • 250:$1.0700
    • 500:$0.9930
    • 1000:$0.9450
    SIZ900DT-T1-GE3
    DISTI # 78-SIZ900DT-T1-GE3
    Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
    RoHS: Compliant
    3040
    • 1:$1.7700
    • 10:$1.4700
    • 100:$1.1400
    • 500:$0.9930
    • 1000:$0.9450
    SIZ900DT-T1-GE3
    DISTI # C1S803602095429
    Vishay IntertechnologiesMOSFETs1355
    • 250:$0.9235
    • 100:$1.0261
    • 25:$1.2502
    • 10:$1.2545
    SIZ900DT-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
    RoHS: Compliant
    Americas -
      Image Part # Description
      SIZ900DP

      Mfr.#: SIZ900DP

      OMO.#: OMO-SIZ900DP-1190

      New and Original
      SIZ900DP-T1-GE3

      Mfr.#: SIZ900DP-T1-GE3

      OMO.#: OMO-SIZ900DP-T1-GE3-1190

      New and Original
      SIZ900DT

      Mfr.#: SIZ900DT

      OMO.#: OMO-SIZ900DT-1190

      New and Original
      SIZ900DT-T1-E3

      Mfr.#: SIZ900DT-T1-E3

      OMO.#: OMO-SIZ900DT-T1-E3-1190

      New and Original
      SIZ900DT-T1-GE3

      Mfr.#: SIZ900DT-T1-GE3

      OMO.#: OMO-SIZ900DT-T1-GE3-VISHAY

      MOSFET 2N-CH 30V 24A POWERPAIR
      Availability
      Stock:
      Available
      On Order:
      5500
      Enter Quantity:
      Current price of SIZ900DT-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $1.02
      $1.02
      10
      $0.97
      $9.69
      100
      $0.92
      $91.77
      500
      $0.87
      $433.35
      1000
      $0.82
      $815.80
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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