IPD65R380E6ATMA1

IPD65R380E6ATMA1
Mfr. #:
IPD65R380E6ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET LOW POWER_LEGACY
Lifecycle:
New from this manufacturer.
Datasheet:
IPD65R380E6ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
10.6 A
Rds On - Drain-Source Resistance:
340 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
39 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
83 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Series:
CoolMOS E6
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Infineon Technologies
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
7 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
57 ns
Typical Turn-On Delay Time:
10 ns
Part # Aliases:
IPD65R380E6 SP001117736
Unit Weight:
0.139332 oz
Tags
IPD65R380E, IPD65R3, IPD65R, IPD65, IPD6, IPD
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
IPD65R380E6ATMA1
DISTI # IPD65R380E6ATMA1-ND
Infineon Technologies AGMOSFET N-CH 650V 10.6A TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.8585
IPD65R380E6ATMA1
DISTI # IPD65R380E6ATMA1
Infineon Technologies AGTrans MOSFET N-CH 700V 10.6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R380E6ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.8329
  • 5000:$0.8019
  • 10000:$0.7729
  • 15000:$0.7469
  • 25000:$0.7339
IPD65R380E6ATMA1
DISTI # 13AC9049
Infineon Technologies AGMOSFET, N-CH, 650V, 10.6A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:10.6A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.34ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes588
  • 1:$1.7100
  • 10:$1.4500
  • 25:$1.3500
  • 50:$1.2600
  • 100:$1.1600
  • 250:$1.0900
  • 500:$1.0200
  • 1000:$0.8390
IPD65R380E6ATMA1Infineon Technologies AGPower Field-Effect Transistor, 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
RoHS: Compliant
73450
  • 1000:$0.7800
  • 500:$0.8200
  • 100:$0.8500
  • 25:$0.8900
  • 1:$0.9600
IPD65R380E6ATMA1
DISTI # 726-IPD65R380E6ATMA1
Infineon Technologies AGMOSFET LOW POWER_LEGACY
RoHS: Compliant
0
  • 1:$1.7100
  • 10:$1.4500
  • 100:$1.1600
  • 500:$1.0200
  • 1000:$0.8390
  • 2500:$0.7810
IPD65R380E6ATMA1
DISTI # 2726056
Infineon Technologies AGMOSFET, N-CH, 650V, 10.6A, TO-252-3
RoHS: Compliant
797
  • 5:£1.4900
  • 25:£1.3600
  • 100:£1.1000
IPD65R380E6ATMA1
DISTI # 2726056
Infineon Technologies AGMOSFET, N-CH, 650V, 10.6A, TO-252-3
RoHS: Compliant
588
  • 1:$2.7800
  • 10:$2.4200
  • 100:$1.9800
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Availability
Stock:
Available
On Order:
1987
Enter Quantity:
Current price of IPD65R380E6ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.70
$1.70
10
$1.44
$14.40
100
$1.15
$115.00
500
$1.01
$505.00
1000
$0.84
$839.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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