IPP032N06N3GXKSA1

Mfr. #:: IPP032N06N3GXKSA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 60V 120A TO220-3
Lifecycle:: New from this manufacturer.
Datasheet:: IPP032N06N3GXKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 60 V

Id - Continuous Drain Current:: 120 A

Rds On - Drain-Source Resistance:: 2.6 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 124 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 188 W

Configuration:: Single

Tradename:: OptiMOS

Packaging:: Tube

Height:: 15.65 mm

Length:: 10 mm

Series:: OptiMOS 3

Transistor Type:: 1 N-Channel

Width:: 4.4 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 149 S

Fall Time:: 20 ns

Product Type:: MOSFET

Rise Time:: 120 ns

Factory Pack Quantity:: 500

Subcategory:: MOSFETs

Part # Aliases:: G IPP032N06N3 IPP32N6N3GXK SP000680770

Unit Weight:: 0.211644 oz

Tags: IPP032N06N3GX, IPP032N06N3G, IPP032N06N3, IPP032, IPP03, IPP0, IPP

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPP032N06N3GXKSA1 Ratings and Reviews

P***u

item never come after 3.5 month of waiting. opened dispute and got refund.

2019-06-18

I***v

Layouts for all occasions. Quality is good.

2019-02-22

IPP032N06N3GXKSA1 Description

***ure Electronics: Single N-Channel 60 V 3.2 mOhm 165 nC OptiMOS Power Mosfet - TO-220-3

***p One Stop: Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO220-3, RoHS

***nell: MOSFET, N-CH, 60V, 120A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; P

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 120 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 3.2 / Gate-Source Voltage V = 20 / Fall Time ns = 20 / Rise Time ns = 120 / Turn-OFF Delay Time ns = 62 / Turn-ON Delay Time ns = 35 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 188

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***ure Electronics: FDP030N06 series 60 V 193 A 3.2 mOhm N-Channel PowerTrench Mosfet - TO-220-3

***Yang: Trans MOSFET N-CH 60V 193A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube

***emi: N-Channel PowerTrench® MOSFET 60V, 193A, 3.2mΩ

***r Electronics: Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***ure Electronics: Single N-Channel 60 V 4 mOhm 98 nC OptiMOS Power Mosfet - TO-220-3

***Yang: Trans MOSFET N-CH 60V 90A 3-Pin TO-220 Tube - Rail/Tube

***el Electronic: INFINEON - IPP040N06N3GXKSA1 - MOSFET, N CH, 90A, 60V, PG-TO220-3

*** Stop Electro: Power Field-Effect Transistor, 90A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO220-3, RoHS

***ment14 APAC: MOSFET, N CH, 90A, 60V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:60V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:188W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:188W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 130 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 4 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 70 / Turn-OFF Delay Time ns = 40 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 188

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***ure Electronics: Single N-Channel 60 V 3.7 mOhm 59 nC OptiMOS Power Mosfet - TO-220-3

***p One Stop: Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-220 Tube

***ponent Stockers USA: 90 A 60 V 0.0037 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO220-3, RoHS

***ark: MOSFET, N CH, 90A, 60V, PG-TO220-3; Transistor Polarity:N Channel; Current Id Max:90A; Drain Source Voltage Vds:60V; On State Resistance:3mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:167W; Operating ;RoHS Compliant: Yes

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***ure Electronics: Single N-Channel 60 V 2.9 mOhm 56 nC OptiMOS Power Mosfet - TO-220-3

***nell: MOSFET, N CH, 60V, 100A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V;

*** Stop Electro: Power Field-Effect Transistor, 24A I(D), 60V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon SCT: OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO220-3, RoHS

***ineon: OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***emi: N-Channel PowerTrench® MOSFET, Logic Level, 60V, 80A, 6mΩ

***Yang: Trans MOSFET N-CH 60V 14A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***inecomponents.com: 60V, 80A, 6m ohom ,NCH LOGIC LEVEL POWER TRENCH MOSFET

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):4.6mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:242mW; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220; Power Dissipation Pd:242mW; Pulse Current Idm:320A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-Channel 60V - 0.014Ohm - 60A - TO-220 StripFET(TM) II MOSFET

*** Electronics: STP60NF06 N-Channel MOSFET, 60 A, 60 V STripFET II, 3-Pin TO-220 STMicroelectronics

***ical: Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: N-Channel 60 V 16 mO STripFET II Power MosFet - TO-220

***enic: 60V 60A 16m´Î@10V30A 110W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***nell: MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation P

***r Electronics: Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Market price

Part #	Mfg.	Description	Stock	Price
IPP032N06N3GXKSA1 DISTI # 31223026	Infineon Technologies AG	Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	500	10000:$0.7354 5000:$0.7651 2500:$0.7939 1000:$0.8534 500:$1.0368 100:$1.1808 16:$1.4784
IPP032N06N3GXKSA1 DISTI # IPP032N06N3GXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 60V 120A TO220-3 RoHS: Compliant Min Qty: 1 Container: Tube	263In Stock	1000:$0.9769 500:$1.1791 100:$1.5159 10:$1.8870 1:$2.0900
IPP032N06N3GXK DISTI # IPP032N06N3GXKSA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP032N06N3GXKSA1) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$0.7059 2000:$0.6799 3000:$0.6549 5000:$0.6329 10000:$0.6219
IPP032N06N3GXKSA1 DISTI # 50Y2051	Infineon Technologies AG	MOSFET Transistor, N Channel, 120 A, 60 V, 0.0026 ohm, 10 V, 3 V RoHS Compliant: Yes	186	1:$1.7700 10:$1.5000 100:$1.2100 500:$1.1100 1000:$0.9990 2500:$0.8110 5000:$0.7840
IPP032N06N3GXKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	160	1000:$0.7800 500:$0.8200 100:$0.8500 25:$0.8900 1:$0.9600
IPP032N06N3GXKSA1 DISTI # 726-IPP032N06N3GXKSA	Infineon Technologies AG	MOSFET N-Ch 60V 120A TO220-3 RoHS: Compliant	948	1:$1.8100 10:$1.5400 100:$1.2300 500:$1.0800 1000:$0.8890
IPP032N06N3GXKSA1 DISTI # 8922100P	Infineon Technologies AG	MOSFET N-CHANNEL 60V 120A OPTIMOS TO220, TU	75	10:£0.9380 25:£0.8060 50:£0.7640 100:£0.7240
IPP032N06N3GXKSA1 DISTI # 8922100	Infineon Technologies AG	MOSFET N-CHANNEL 60V 120A OPTIMOS TO220, PK	105	5:£1.1500 10:£0.9380 25:£0.8060 50:£0.7640 100:£0.7240
IPP032N06N3GXKSA1 DISTI # 2480846	Infineon Technologies AG	MOSFET, N-CH, 60V, 120A, TO-220-3 RoHS: Compliant	186	1:$3.1400 10:$2.7400 25:$2.2300 100:$1.8900 250:$1.6300 500:$1.5400 1000:$1.4600
IPP032N06N3GXKSA1 DISTI # 2480846	Infineon Technologies AG	MOSFET, N-CH, 60V, 120A, TO-220-3 RoHS: Compliant	311	5:£1.4400 25:£1.2400 100:£0.9980 250:£0.9340 500:£0.8700

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IPP032N06N3GXKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

P***u

I***v

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes